期刊文献+

纳米结构中激子研究进展 被引量:1

Research Progress of Exciton in Nanometer Structure
在线阅读 下载PDF
导出
摘要 回顾了近年来耦合量子阱中激子玻色-爱因斯坦凝聚的研究进展和主要实验成果,提供了耦合量子阱中间接激子凝聚的实验证据和高度简并冷激子系统形成的实验条件以及形成机理。介绍了量子点中激子在量子信息中的最新发展,在纳米结构中的准粒子激子已经成为极有应用前景的发展目标。 The development and experimental results of exciton BEC in coupled quantum wells in resent years are reviewed. The experimental evidence of indirect condensation in quantum wells, and the experimental conditions and formation mechanisms of these degenerate exciton systems are provided. The resent development of exciton in quantum dots is introduced, quasiparticles known as excitons become promising subjects for realizing quantum computing in solid state.
出处 《半导体技术》 CAS CSCD 北大核心 2005年第12期44-48,共5页 Semiconductor Technology
基金 国家自然科学基金资助项目(60178038) 福建省自然科学基金资助项目(E0410018)
关键词 激子 耦合量子阱 相图 玻色-爱因斯坦凝聚 自组织量子点 exciton coupled quantum wells phase diagram BEC self-assembled quantum dot
作者简介 闫占彪(1979-),男,内蒙古人,华侨大学在读硕士研究生,物理电子学专业; 郭震宁(1958-),男,福建莆田人,博士,教授,长期从事光电子材料与器件研究工作.
  • 相关文献

参考文献12

  • 1DAVIS K B, MEWES M O, ANDREWS M R, et al. BoseEinstein condensation in gas of sodium atoms[J]. Phy Rev Lett, 1995,75(22):3969 - 3973.
  • 2BA NYAI L, BUNDARU A M, HAUG H. Quasiclassical approach to Bose condensation in a finite potential well[J]. Phy Rev B,2004,70(4): 045201.
  • 3BUTOV L V, LAI C W, IVANOV A L. Towards BoseEinstein condensation of excitons in potential traps[J]. Nature,2002,417(6884): 47- 52.
  • 4BUTOV L V, GOSSARD A C, CHEMLA D S. Macroscopically ordered state in an exciton system[J].Nature, 2002,418(6899): 751 -754.
  • 5LAI C W, ZOCH J, GOSSARD A C. Phase diagram of degenerate exciton systems[J]. Science, 2004,303(5657):503-507.
  • 6KEELING J, LEVITOV LS. Angular distribution of photoluminescence as a probe of Bose condensationof trapped excitons[J]. Phy Rev Lett,2004, 92 (17):176402.
  • 7BUTOV L V, LEVITOV L S. Formation mechanism and low-temperature instability of exciton rings[J]. Phy Rev Lett, 2004, 92 (11): 117404.
  • 8LUNDSTROM T, SCHOENFELD W. Exciton storage in semiconductor self-assembled quantum dots[J].Science, 1999, 286(5448): 2312- 2314.
  • 9CHEN G, BONADEO N H, STEEL D G, et al. Optically induced entanglement of excitons in a single quantum dot[J]. Science, 2000, 289(5486): 1906- 1909.
  • 10SNOKE D. Spontaneous Bose coherence of excitons and polaritons[J]. Science, 2002,298(1368):1368- 1372.

同被引文献7

  • 1刘文楷,安艳伟,林世鸣,张存善,张常年.GaAs量子阱半导体微腔中腔极化激元的动态行为(英文)[J].光子学报,2005,34(5):793-796. 被引量:2
  • 2HEON HAM.Electronic and Optical Properties of Quantum Nano-Structures[D].Chicago:Illinois Institute of Technology,2001.
  • 3CHO A Y,CHEN D R.GaAs MESFET Prepared by Molecular Beam Epitaxy (MBE)[J].Appl.Phys.Lett.,1976,28:30-33.
  • 4江德生.半导体的激子效应及其在光电子器件中的应用[R].北京:中国科学院半导体研究所,2005.
  • 5H.F.席弗尔.量子力学[M].成都:四川大学出版社,1988.
  • 6CHO A Y,DION R W,CASEY JR,et al.Continuous Room-Temperature Operation of GaAs-AlGaAs Double-Heterostructure Lasers Prepared by Molecular-Beam[J].Appl.Phys.Lett.,1976,28:501-503.
  • 7阿莱斯泰雷.量子物理学[M].南京:江苏人民出版社,2000.

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部