摘要
简单介绍了ICP刻蚀系统和刻蚀原理。通过实验分析了ICP刻蚀SiO2和Cr时,刻蚀速率随相关工艺参数变化而变化的几点规律。同时给出了用ICP刻蚀出的MEMS传感器Si基腔的表面形貌图和Cr电阻的显微镜照片。
The ICP etching system and principle were introduced. Some rules of etching rate varied with the changing of the related process data were analyzed, when doing SiO2 and Cr membranes ICP etching by this system. The AFM morphology images of Si based cavity MEMS sensor and Cr resistance etched by ICP were given.
出处
《微纳电子技术》
CAS
2005年第10期473-476,共4页
Micronanoelectronic Technology
作者简介
李伟东（1982-）,男,硕士研究生,主要研究方向为微传感器的设计与制作工艺;
张建辉（1977-）,男,硕士研究生,主要研究方向为微机电湿法腐蚀及其他加工工艺;
吴学忠（1965-）,男,副教授,硕士生导师,研究方向为微机电系统.
