摘要
设计并制备了三种不同集电结结构的A lG aInP/G aA s异质结双极晶体管,计算给出了三种集电结能带结构。通过对三种HBT的直流特性测试表明,N pN型HBT因异质集电结的导带尖峰出现电子阻挡效应;N p iN型HBT集电结引入i-G aA s层能有效克服电子阻挡效应,同时还具有拐点电压Vknee小、开启电压Voffset小、击穿电压BVCEO大等优点,但由于i-G aA s层引入增加了基区电子扩散长度,使器件电流增益有所下降。
Three large-scale Heterojunction Bipolar Transistors with different base/collector junction structure have been fabricated by using AlGalnP/GaAs HBT material grown by MOCVD. The electron repelling effect of the conduction-band spike formed at the collector heterojunction was obtained at the transistors with a p^＋-GaAs/N-AlGalnP base/collector junction structure. To overcome this effect a thin i-GaAs layer was inserted between the base and the AlGalnP wide-gap collector. Transistors with a p^＋-GaAs/i-GaAs/N-AlGalnP base/collector junction structure show excellent current/voltage characteristics.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2005年第3期294-298,314,共6页
Research & Progress of SSE
作者简介
李冰寒（LI Binghan）男．1975年生，博士，主要研究兴趣有：化合物半导体器件与电路，欧姆接触以及化合物半导体材料的分子束外延生长。E-mail ： lbhqt @hotmail. com
