摘要
本文介绍了一种由砷化镓单片集成电路工艺实现的Q值相对较高的微波有源电感的新型结构,其电路原理图由三个微波场效应晶体管和一个电容组成.这种微波有源电感具有工作频率高,电感值不受晶片大小的限制,并且具有可受直流偏压控制的特点,在微波电路微型化方面具有较高的实用价值.
In this paper a new topology of microwave active inductor with relatively higher Q value realised by GaAs MMIC (Microwave Monolithic Integrated Circuit) is proposed. Its principle circuit is composed of three MESFETS and one capacitor. This kind of active inductor possesses a lot of advantages, such as high working frequency, no limitation on the inductance value to the chip area, inductance controllability through bias voltage. Therefore, it is quite attractive in the application of microwave miniaturized circuits.
出处
《微波学报》
CSCD
北大核心
1995年第4期312-315,共4页
Journal of Microwaves
