摘要
本文研究了１．０６μｍ和０．５３μｍ激光对硅ｐｉｎ光电二极管以及硅雪崩光电管的永久性损伤效应，测出了损伤阈值。实验发现，光电探测器的ＰＮ结受到激光热烧伤是造成其永久性损伤的重要因素，损伤阈值的大小与激光波长、脉冲宽度以及光电探测器结构有关。
The perpetual laser damage effects of silicon PIN photoelectric diodes and silicon avalanche photodiodes irradiated by a laser of 1.06μm or 0.53μm wavelength are studied.The laser damage thresholds of the detectors are experimentally measured.The main reason of causing the perpetual damage are the laser heat singe on the PN connect of photoelectric diodes.The damage thresholds are relative to the laser wavelength,pulse width and the photodiod structure.
出处
《激光技术》
CAS
CSCD
1995年第3期135-140,共6页
Laser Technology
关键词
光电探测器
永久性
激光损伤阈值
photoeletric detector perpetual laser damage threshold
