摘要
文章讨论了ＭＪＢ３ＵＶ３００型光刻机的控制调整。以及抗蚀剂工艺条件的改进，消除影响曝光分辨率的驻波和衍射作用，实现了边缘整齐陡直、０．４μｍ条宽的光刻。
The paper discusses the adjustment and control of MJB3UV300 model mask aligner, as well as the improvement of process conditions for the photoresist. Photolithography of 0. 4μm linewidth with sharp and uniform edges has been realized in terms of eliminating the standing wave and diffraction which have a negative effect on explosure resolution.
出处
《半导体光电》
CAS
CSCD
北大核心
1994年第4期336-339,共4页
Semiconductor Optoelectronics
关键词
光刻
亚微米光刻
光刻胶
ULSI
OEIC
Photolithography, Submicron mater Photolithography, Photoresist
