期刊文献+

外围缩合四个1,10-啡啰啉单元的新氮杂酞菁的表面光伏响应及电场作用研究 被引量:2

Surface Photovoltaic Response and Electric-field Action of a New aza H_2Pc Containing Four 1,10-Phenanthroline Subunits
在线阅读 下载PDF
导出
摘要 通过电场诱导表面光电压谱确定外围缩合4个1,10-啡啉单元的氮杂酞菁为p型有机半导体,并对各个谱带进行合理的归属.结果发现,Soret带长波侧光电压曲线在电场作用下轻微蓝移,根据电场对高极化度n轨道基态的影响,将其归属为n-π*跃迁.这一结果表明,光电属性与材料的分子结构和电子结构密切相关,为设计有机半导体模型提供了进一步的实验数据. In this paper an aza H_2Pc containing four 1,10-phenanthroline subunits was presented and its photoluminescence and photovoltage properties were investigated. For the same kind of electronic transition(π-π~* transition), the photoluminescence and photovoltage exhibit competitive mechanism. Interestingly, the Soret-band SPV response is stronger than that of Q-band due to the four peripheral subunits. Based on the electric-field-induced surface photovoltage spectroscopy, the conduction type of the expanded aza H_2Pc was judged to be p-type. This contribution from the peripheral electron-withdrawing subunits comes with decreasing the electron-filling energy and facilitating the molecular oxidation. From the similar behavior, the Q-band and short wavelength side of Soret-band were assigned to π-π~* transition. Another intriguing aspect is that the long wavelength side of Soret-band exhibits a slight blue shift in the external electric field. According to the influence of electric field on the ground state of n-orbital with a high polarizability, it was assigned to n-π~* transition. The results indicate that the optoelectronic properties closely related to the molecular structure and the electronic structure, which provide further experimental data for developing an organic semiconductor model.
出处 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2005年第7期1294-1297,M006,共5页 Chemical Journal of Chinese Universities
基金 国家自然科学基金(批准号:60307002)资助
关键词 1 10-啡啰啉 氮杂酞菁 表面光伏响应 电场作用 有机半导体 光荧光 光电压 外围缩合 Organic semiconductor Phathalocyanine Photoluminescence Photovoltage
  • 相关文献

参考文献10

  • 1McKeown N. B.. Phethalocyanine Materials: Synthesis, Structure and Function[M], New York: Cambridge University Press, 1998
  • 2Xie Teng-Feng, Wang De-Jun, Zhu Lian-Jie et al.. J. Phys. Chem. B[J], 2000, 104: 8177-8181
  • 3Leibovitch M., Kronik L., Fefer E. et al.. J. Appl. Phys.[J], 1996, 79(11): 8549-8556
  • 4Kohler A., Gruner J., Friend R. H. et al.. Chem. Phys. Lett.[J], 1995, 243: 456-461
  • 5Wang De-Jun, Zhang Jie, Shi Tong-Shun et al.. J. Photochem. Photobiol. A[J], 1996, 93: 21-25
  • 6曹昌盛,王策,曹亚安,史延慧,李铁津.三聚噻吩的表面光电压谱研究[J].高等学校化学学报,2001,22(6):1010-1012. 被引量:3
  • 7Du Xi-Guang, Ma Chun-Yu, Hou Xiao-Ke et al.. Heterocycles[J], 2003, 60: 2535-2542
  • 8Snow A. W., Jarvis N. L.. J. Am. Chem. Soc.[J], 1984, 106: 4706-4711
  • 9Baldassare D. B.. Spectroscopy of the Excited State[M], New York: Plenum Press, 1972: 340
  • 10Yamashita K., Harima Y., Matsubayashi T.. J. Phys. Chem.[J], 1989, 93: 5311-5315

二级参考文献1

  • 1Horowitz G,Solid State Commun,1989年,72卷,381页

共引文献2

同被引文献18

  • 1Robertson J.M,Woodward I..J.Chem.Soc.[J],1937:615-621
  • 2Robertson J.M,Woodward I..J.Chem.Soc.[J],1940:36-48
  • 3Cook M.J,Mcmurdo J,Powwell A.K..J.Chem.Soc.Chem.Commun.[J],1992:444-446
  • 4Tanaka A.A,Fierro C,Sherson D.A.et al..Mater.Chem.Phys.[J],1989,22(3/4):431-456
  • 5Yamano M,Kashivazaki N,Yamanoto M.et al..Jpn.J.Appl.Phys,Part 2[J],1987,26(7):L1113-L1115
  • 6Teuchner K,Pfarrherr A,Stiel H.et al..Photochem.Photobiol.[J],1993,57(3):465-471
  • 7Kudrevich S.V,Galpern M.G,van Lier J.E..Synthesis[J],1994:779-781
  • 8Sheldrick G.M..SHELXTL-97,Program for X-ray Crystal Structure Solution[CP],University of Gottingen,Germany,1997
  • 9Sheldrick G.M..SHELXTL-97,Program for X-ray Crystal Structure Refinement[CP],University of Gottingen,Germany,1997
  • 10Sheldrick G.M..SADABS Siemens Area Detector Absorption (and Other) Correction[CP],University of Gottingen,Germany,1997

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部