期刊文献+

新型集成阵列四象限CMOS光电传感器的研制 被引量:3

Research of a New Integrated Arrayed 4 Quadrants CMOS Photo-Electric Sensor
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摘要  本文介绍了一种用于目标跟踪和坐标定位的新型集成阵列四象限CMOS光电传感器.该传感器采用上华0.6μm标准CMOS工艺制造,实现了象限传感器与后端信号处理电路的单片集成.该传感器由16×16单元有源光电管阵列,相关二次采样电路和时序控制电路组成.每个有源光电管的大小为60μm×60μm,其感光面积百分比(FillFactor)为64.5%.通过变频二次扫描的工作模式可将传感器的感光动态范围增大为84dB.传感器的感光灵敏度为2V/lx·s,工作速度根据目标照度可在2ms/帧~64ms/帧范围内调整. A new integrated arrayed 4 quadrants CMOS photo-electric sensor used for target coordinate obtaining and target tracking is designed and fabricated in a 0.6 μ m standard CMOS process. It realizes the single chip integration of the quadrants sensor and subsequent signal processing circuits. It consists of 16 × 16 active photodiodes (PD) array, correlated double sampling (CDS) circuits and digital control part. The area of each active PD is 60 μm × 60 μ m and the fill factor is 64.5%. The dynamic range (DR) of the sensor can be enlarged with reset frequency adjustment double scanning method. As a result, 84 dB DR can be obtained. The sensitivity of sensor can be 2 V/lx &middot s and the sensor operation speed can be 2 ms/frame-64 ms/frame according to illuminance intensity.
作者 周鑫 朱大中
出处 《电子学报》 EI CAS CSCD 北大核心 2005年第5期928-930,共3页 Acta Electronica Sinica
基金 国家自然科学基金(No.90307009)
关键词 阵列式象限传感器 相关二次采样 互补金属氧化物半导体光电传感器 动态范围调整 二次扫描 Automatic target recognition CMOS integrated circuits Photodiodes Photoelectric devices Sampling Sensitivity analysis Signal processing
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参考文献5

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同被引文献19

  • 1陈敏思,姚素英,赵毅强,张生才,李树荣,徐江涛,王天盛.高帧频大动态范围CMOS图像传感器时序控制电路的设计与实现[J].电子学报,2004,32(11):1922-1925. 被引量:11
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  • 3陈非凡,洪志伟.基于光学游标测量原理的平行光入射角度测量方法[J].清华大学学报(自然科学版),2006,46(8):1401-1404. 被引量:1
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