摘要
优化有机晶体的生长工艺是获得性能优良的有机场效应管(OFET)的重要基础。以热氧化后的硅片为衬底,用真空蒸镀的方法制备了有机半导体材料并五苯薄膜,通过X射线衍射和原子力显微镜对薄膜的生长晶体结构及形貌等进行了分析,讨论了薄膜制备过程中的诸多因素对晶体生长的影响。
Optimization of the organic crystal fabrication process is important for obtaining the high performance of organic field-effect transistors (OFETs). The thin-films of organic semiconductor pentacene were fabricated by thermal evaporation on silicon substrates coated with SiO2 layer by dry oxidation. X-ray diffraction (XRD) patterns and atomic force microscopic images were employed to analyze the surface morphologies and the crystal structures of the samples. The influences of the deposition conditions on the crystallization were explored.
出处
《电子器件》
EI
CAS
2005年第1期13-15,共3页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助项目(10274009)。
关键词
并五苯
有机场效应管(OFET)
晶面间距
pentacene
organic field-effect transistor(OFET)
crystal plane spacing
