摘要
0引言氧化锌(ZnO)是一种重要的宽禁带、直接带隙(3.37 eV)半导体材料.它具有极好的抗氧化和抗腐蚀能力、高的熔点、良好的机电耦合性及环保性.因此作为一种重要的工业原料,已被广泛应用于工业用品、化妆品及药物的生产和加工.
High-quality ZnO nanowires have been synthesized at relatively low temperature via one-step electrochemical anodization technique. In this method, Zn sheet acted as the anode and Pb sheet served as the counter electrode, and the complex solution of HF-C2H5OH-H2O was used as electrolyte. ZnO nanowires were characterized by Field Emission Scanning Electron Microscopy (FE-SEM), Transmission Electron Microscopy (TEM) and Selected Area Electron Diffraction (SAED) and X-ray Diffraction (XRD). The results show that the nanowires were wurtzite crystalline ZnO, and the ZnO nanowires with the diameters of 70 nm and 30 similar to 40 nm were obtained by adjusting preparation conditions, respectively.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2005年第4期583-587,共5页
Chinese Journal of Inorganic Chemistry
基金
国家自然科学基金资助项目(No.50132040)。
