Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene
参考文献10
-
1Gelinck G H, Geuns T C T and de Leeuw D M 2000 Appl.Phys. Lett. 77 1487.
-
2Hu YC, Dong G F and WangL D et al 2004 Chin. Phys.Lett. 21 723.
-
3Zhuang S M, Shi J W and Liu M D et al 2004 Chin. Phys.Lett. 21 164.
-
4Puigdollers J, Voz C and Orpella A et al 2004 Organ. Electron. 5 67.
-
5Gundlach D J, Lin Y Y and Jackson T Net al 1997 IEEE Electron. Device Lett. 18 87.
-
6Lin Y Y, Gundlach D J and Nelon S F et al 1997 IEEE Electron. Device Lett. 18 606.
-
7Dimitrakopoulos C D, Purushothaman S and Kymissis Jet al 1999 Science 283 822.
-
8Dodabalapur A, Katz H E, Torsi L and Haddon R C 1995 Science 269 1560.
-
9Kim Y M, Pyo S W and Kim J Set al 2002 Opt. Mater.21 425.
-
10Shim J H, Jung L Y and Pyo S Wet al 2003 Thin Solid Films 441 248.
-
1陶春兰,张旭辉,董茂军,刘一阳,孙硕,欧谷平,张福甲,张浩力.Synthesis,characterization of the pentacene and fabrication of pentacene field-effect transistors[J].Chinese Physics B,2008,17(1):281-285. 被引量:1
-
2卢年端,汪令飞,李泠,刘明.A review for compact model of graphene field-effect transistors[J].Chinese Physics B,2017,26(3):96-113. 被引量:1
-
3Jingqi Li,Weisheng Yue,Zaibing Guo,Yang Yang,Xianbin Wang,Ahad A.Syed,Yafei Zhang.Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon[J].Nano-Micro Letters,2014,6(3):287-292. 被引量:2
-
4Zhixin Li,Dan Xie,Ruixuan Dai,Jianlong Xu,Yilin Sun,Mengxing Sun,Cheng Zhang,Xian Li.High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors[J].Nano Research,2017,10(1):276-283. 被引量:1
-
5张素梅,石家纬,刘明大,李靖,郭树旭,王伟.Pentacene Organic-Thin-Film Field-Effect Transistors[J].Chinese Physics Letters,2004,21(1):164-165.
-
6WANG ZhenXing ZHANG ZhiYong PENG LianMao.Graphene-based ambipolar electronics for radio frequency applications[J].Chinese Science Bulletin,2012,57(23):2956-2970.
-
7曾卫国,唐松乔.全蒸发顶空气相色谱法测定聚乙烯醇中甲醇的含量[J].分析测试技术与仪器,2013,19(3):143-148. 被引量:5
-
8秦洁宇,杜刚,刘晓彦.The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor[J].Chinese Physics B,2013,22(10):469-473.
-
9王伟,石家纬,郭树旭,张宏梅,全宝富,马东阁.Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors[J].Chinese Physics Letters,2006,23(11):3108-3110. 被引量:1
-
10FU XiaoLong,WANG ChengLiang,LI RongJin,DONG HuanLi & HU WenPing Beijing National Laboratory for Molecular Sciences,Key Laboratory of Organic Solids,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China.Organic single crystals or crystalline micro/nanostructures: Preparation and field-effect transistor applications[J].Science China Chemistry,2010,53(6):1225-1234. 被引量:1