摘要
根据多孔阳极氧化铝 (AAO)薄膜的实验透射谱 ( 2 0 0— 2 5 0 0nm) ,采用极值包络线算法确定其光学常数 ,并由此较精确地计算出AAO薄膜样品在该波段的光学常数 .结果表明 ,多孔氧化铝薄膜表现出直接带隙 (能隙约 4 .5eV)半导体的光学特性 ,且其光学常数与制样中的重要工艺参数阳极氧化电压有显著的相关性 ,即随阳极氧化电压的增加 ,AAO薄膜的厚度、折射率和光学能隙变大 ,消光系数减小 .同时 ,计算得到的薄膜厚度与实测值相吻合 。
A simple method was established based on the envelope curves of the optical transmission spectrum over the wavelength range of 200 to 2500 nm at normal incidence, which was used for the accurate determination of the optical constants of the anodic aluminum oxide(AAO) films. The results showed that the AAO films exhibited the optical features of a semiconductor with direct band gap of about 4.5 eV, and the optical constants of the AAO films depended strongly on the anodic oxidation voltage, an important technologic parameter for preparation of AAO films. With the increase of the anodic oxidation voltage, the optical constants including the refractive index, thickness and optical band gap of AAO films increased, and the extinction coefficient decreased. Meanwhile, the fact that the calculated values of the thickness of AAO films were in satisfactory agreement with the values of measurement illuminated that the results were well self-consistent with the experiment.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第1期439-444,共6页
Acta Physica Sinica
基金
甘肃省自然科学基金(批准号 :ZS0 2 1 A2 5 0 2 9 C)
西北师范大学二期科技创新工程项目(批准号 :KJCXGC 2 14 )资助的课题~~
