摘要
利用共蒸发的三步法制备了较高质量的四元化合物Cu(In,Ga)Se2(CIGS)薄膜,并采用Mo/CIGS/CdS/ZnO 结构为基础做出转换效率超过10%的薄膜太阳电池,其最高转换效率达到12.1%(测试条件为:AM1.5,Global 1000W/m2)。通过与国际最高水平的CIGS太阳电池各参数的比较,分析了我们所制备的CIGS太阳电池在工艺和物理方面存在的问题。
High efficiency four-compound Cu(In,Ga)Se2( CIGS) thin films were prepared using a three-step co -evaporation process. Furthermore, the conversion efficiency in excess of 10% has been achieved by thin film solar cell with a structure of Mo/CIGS/CdS/ZnO, and the maximum reached a 12. 1% efficiency level (test condition: AM1. 5, Global irradiance 1000W/m2) . The problems of fabricating technology and of physics were discussed comparing with the international highest level of CIGS thin film solar cell.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2004年第6期782-784,共3页
Acta Energiae Solaris Sinica
基金
国家863计划资助项目(2001AA513020)
