摘要
介绍了一种基于 0 35 μmCMOS工艺、2 4GHz增益可控的低噪声放大器。从噪声优化、阻抗匹配及增益的角度详细分析了电路的设计方法 ,讨论了寄生效应对低噪声放大器性能的影响。仿真结果表明在考虑了高频寄生参数的情况下 ,低噪声放大器依然具有良好的性能指标 :在 2 4GHz工作频率下 ,3dB带宽为 6 6 0MHz,噪声系数NF为 1 5 8dB ,增益S2 1为 14dB ,匹配参数S11约为 - 13 2dB。
A 2 4 GHz gain-controlled low-noise amplifier (LNA), based on 0 35 μm CMOS technology, is presented in this paper. From the aspects of noise optimization, impedance match and gain, design methodology for LNA is given in detail, and the influence of parasitic parameters on LNA is also discussed. Under the consideration of parasitic parameters, quite good NF of 1.58 dB, moderate gain of 14 dB and acceptable S11 of -13 2 dB are achieved.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2004年第4期498-504,共7页
Research & Progress of SSE
