摘要
用多晶薄膜晶粒-晶界两相结构模型,考虑晶格畸变和载流子对晶界势垒区的隧穿机制,在10～100oC范围内,模拟了离子束增强沉积(IBED)VO2多晶薄膜的相变。模拟结果显示,由于晶粒中间隙位置氩的存在,使VO2晶格畸变,导致了薄膜中部分晶粒的相变温度降低,使IBEDVO2薄膜在48oC开始由半导体相向金属相转变。
Based on the model of the two phases of grain and grain boundary, the resistivity of the VO2 film prepared by Ion Beam Enhanced Deposition (IBED) method was studied. The lattice distortionhypothesis and grain boundary tunneling are supposed to simulate the resistivity change of the VO2 polycrystalline film with temperature. Due to the present of Ar+in interstitial site of VO2 lattice, some grains begin the semiconductor-to-metal phase transition at 48oC lower than the phase transi-tion temperature of VO2 single crystal.
出处
《功能材料与器件学报》
CAS
CSCD
2004年第3期332-336,共5页
Journal of Functional Materials and Devices
基金
国家自然科学基金资助课题(No.60277019
No.10175027)
关键词
VO2
多晶薄膜
离子束增强沉积
晶格畸变
晶界隧穿
相变
模拟
VO2 polycrystalline film
ion beam enhanced deposition
lattice distortion
grain boundarytunneling
