摘要
用超细碳粉热还原高岭土合成β-SiC晶须是一条较新颖的晶须制备工艺途径。本文用STEM,EDAX等分析测试技术详细研究了该方法合成的β-SiC晶须的结晶特征及内部缺陷。结果表明,合成温度对晶须的结晶形貌等影响较大。1700℃附近,晶须侧面出现“竹节”状结晶特征。TEM表明,β-SiC晶须表面沿〈111〉方向具有平行的堆垛层错,晶须横断面呈实心正三角形,顶端出现螺型位错。综合其它分析,该方法合成的β-SiC晶须,其生长过程应为“VS”生长机理。
The carbothermal synthesis of β-SiC whiskers with ultrafine carbon powder and kaolin clay isa better method. In the present paper, the crystulline characteristics and inner defects of the whiskerswere studied by means of STEM, EDAX, and so on. The results showed that synthesis temperatuiehad obvious effects on the whisker characteristics. At about 1700℃, especially, the whiskers had'bamboo joint'-like crystallinc parts. TEM showed that the whiskers had triangle cross sections,stacking faults in (111) direction and spiral dislocations at tips of them. The whisker growth pro-cess more likely belongs to 'VS' mechanism.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
1993年第2期33-42,共10页
Bulletin of the Chinese Ceramic Society
关键词
还原
晶须
缺陷
陶瓷
carbothermal reduction method
β-SiC whisker
crystalline characteristics
inner faults
growth mechnism
