摘要
通过三步直接键合方法实现了 Si/ Si键合。采用 XPS、FTIR、I-V、拉伸强度等手段对 Si/ Si键合结构的界面特性作了深入广泛的研究。研究结果表明 ,高温退火后 ,在键合界面没有 Si-H和 Si-OH网络存在 ,键合界面主要由单质 Si和不定形氧化硅 Si Ox 组成。同时 ,研究还表明 ,I-V特性和键合强度强烈地依赖于退火温度。
The Si/Si bonding has been achieved by three-step direct wafer bonding technology. Interfacial characteristic has been widely investigated by the X-ray photoelectron spectronscopy (XPS), Fourier transform infrared spectrum (FTIR),I-V and tensile strength. The results show that there are no infrared absorbtion peak related to the Si-H bonding and Si-OH bonding in the interface at high temperature, and the interface is made up of Si and SiO_x. In addition, the researches indicate that both I-V characteristic and bonding energy strongly depend on annealing temperature
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2004年第3期390-395,共6页
Research & Progress of SSE
基金
国家基金 (项目编号 :6 0 0 0 6 0 0 4)
国家重点基金 (项目编号 :6 0 336 0 1 0 )项目支持
