摘要
将固态源硒化法制备的太阳薄膜材料(Mo/CuIn1-XGaXSe2/CdS)在500℃进行氢处理和氮处理,然后利用XRD、SEM和I-V测试分析了氢处理和氮处理对CuIn1-XGaXSe2薄膜结构、形貌和太阳电池性能的影响。研究表明在500℃的条件下,经过不同时间的氢处理,可以使样品的开启电压减小(特别是经过180min氢处理的样品),提高了p-n结的性能,从而提高光电转换效率,并可以使样品表面的大颗粒逐渐减少,促进CuIn0 7Ga0 3Se相的形成,这和I—V性能的测试结果相符合。而氮气的处理对于样品的I—V性能几乎没有影响,这证明了上述性能的提高是由于氢的钝化作用引起的,而非普通的热处理所致。
Mo/CuIn1-xGaxSe2/CdS (CIGS) solar cells junction were annealed at 500°C in H2 and N2 for various period of time, respectively. Then the effects of hydrogen and nitrogen annealing on structure, morphology, and electrical properties of thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and I-V curve. It was indicated that the turn-on voltage of p-n junction of CIGS decreased and the properties of p-n junction improved after annealing in H2 at 500°C with various period of time so that the efficiency of the solar cells could be increased. Meanwhile, the size of large particles on the surface of the CIGS samples decreased with the increase of the annealing time and the formation of CuIn0.7Ga0.3Se phase was enhanced. However, for the CIGS samples with annealing in N2 at 500'C or without annealing, there are no obvious effect of annealing on the I-V properties of the CIGS samples. It is considered that the improvement of the CIGS junction performance is not due to the normal annealing but the hydrogen passivation.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2004年第4期430-433,共4页
Acta Energiae Solaris Sinica
基金
国家863计划资助项目(2001AA513023)
关键词
太阳电池薄膜
CIGS
氢
热处理
Annealing
Cadmium compounds
Copper compounds
Hydrogen
Molybdenum
Thin films
