摘要
利用强流脉冲离子束(HIPIB)烧蚀等离子体在Si(100)基体上快速沉积类金刚石(DLC)薄膜.电压为250keV,束流密度为250A/cm2,脉宽为70ns的离子束(主要由碳离子和氢离子组成)聚焦到石墨靶材上,使石墨充分电离产生稠密的烧蚀等离子体,在石墨靶的法线方向的Si基体上沉积出非晶的DLC薄膜,基片温度选择25℃和100℃.XPS分析显示DLC薄膜中sp3C的含量达到40%.扫描电镜和原子力显微镜分析得知薄膜表面比较光滑,100℃时沉积的DLC薄膜的表面更光滑,表面粗糙度为0.927nm,其摩擦因数为0.10;TEM分析表明DLC薄膜的相结构是非晶的;X射线衍射分析得出薄膜的宏观残余应力为压应力,其大小约为4GPa.
Diamond-like carbon (DLC) films were prepared onto Si (100) substrate by high-intensity pulsed-ion-beam (HIPIB) ablation of graphite targets. The ion beam of energy 250 keV, current density 250 A/cm^2, and pulse duration 70 ns which primarily consists of hydrogen and carbon ions, was focused onto a graphite target and produced a dense ablation plasma plume. It was subsequently condensed onto the Si substrate at 25 ℃ and 100 ℃, respectively. The analysis of the X-ray photoelectron spectra (XPS) of the C_(1s) core level of the films shows that the sp ~3 C content in the films is about 40%. The films were characterized with SEM and AFM instruments. Roughness of the DLC film deposition at 100 ℃ is 0.927 nm, the friction coefficient is 0.10. The stress analysis by X-ray diffraction shows a compressive residual stress in the range of 4 GPa.
出处
《大连理工大学学报》
EI
CAS
CSCD
北大核心
2004年第4期469-473,共5页
Journal of Dalian University of Technology
基金
国家自然科学基金资助项目(重点项目19835030).
