摘要
<正> 近年来超大规模集成(ULSI)器件发展十分迅速.以动态随机存贮器(DRAM)而言,其集成度正以每2～3年上升四级的速度不断提高.1991年日本已制成64兆位的动态 RAM,在10×20 mm~2 的面积上包含有1.4×10~3 个元件.微细加工技术(特别是刻蚀技术)的日益进步是推动这种发展的强大动力.在各种刻蚀技术中,当前在微电子工业中发挥重要作用的仍是光学刻蚀方法.
More than 10 years ago,it was believed the resolution limitation in lithophotography was 2 μm.However,higher resolution with sufficient depth of focus is the must important requirement for ULSI circuits.In order to satisfy this requirement,ninny technologies for resolution improvement and new optical imae formation technolologies such as phase shifting and focus latitude enhancement exposure(FLEX)are reviewed here,and a future perspective on optical lithography is also discussed.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
1993年第6期101-105,共5页
Journal of Southeast University：Natural Science Edition
关键词
光学刻蚀
分辨率
极限
lithophotography
high resolution
phase shifting technology/FELX:focus latitude enhancement exposure method
