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面向产业需求的21世纪微电子技术的发展(上) 被引量:18

Development of microelectronics technology to meet industry needs in the 21st century
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摘要 微电子产业是国民经济与国防建设的战略性基础产业 .对此 ,我国经历了发展时期的奋斗 ,现正处于微电子产业迅速崛起的前夕 ,预计经过 1 0— 1 5年左右时间的努力 ,将把我国建设成为微电子产业和科学技术的强国 .文章着重介绍了 2 1世纪微电子产业的发展需求 ,面向这个需求 ,讨论了 2 1世纪微电子科学技术的主要发展方向 .认为 :一方面 ,特征尺寸将继续等比例缩小 (scalingdown) ,包括新结构、新工艺、新材料的器件设计与制备技术以及光刻技术、互连技术将迅速发展 ;基于特征尺寸继续等比例缩小 ,系统芯片 (SOC)将取代目前的集成电路 (IC)最终成为主流产品 ;另一方面 ,纳电子学也将得到突破性进展 ,量子器件、分子电子器件等的相关研究日益活跃 ,期望最终达到可集成的目标 ;此外 ,微电子技术与其他领域相结合诞生出的新的技术增长点和新的学科———微机电系统(MEMS)技术等也将继续快速发展 .文章阐述了相关发展方向存在的挑战和可能的解决方案 。 The microelectronics industry is of strategic importance to both the domestic economy and national defense. After a long period of endeavor, the microelectronics industry in China is about to witness rapid growth. With continuing efforts in the coming 10 to 15 years, she should become a power in the microelectronics industry. In this paper the demands of the 21st century on the microelectronics industry are reviewed. It is expected that the size of integrated circuit will continue to be scaled down. Device design and fabrication, including new structures, technique, and materials, will progress rapidly, as well as photolithography and interconnect technology. Based on the scaling down trend, the system-on-a-chip will ultimately replace current integrated circuits and become the mainstream products. On the other hand, nano-electronics will see new breakthroughs. Research into quantum devices and molecular electronic devices will be paid increasing attention with the aim to realize integration ultimately. In addition, MEMS technology, a new field born our of the combination of microelectronics and other research domains, will advance quickly. The challenges involved future research of high academic significance and application value will be discussed.
出处 《物理》 CAS 北大核心 2004年第6期407-413,共7页 Physics
关键词 微电子技术 等比例缩小 系统芯片 纳电子学 微机电系统 microelectronics, scaling down, system-on-a-chip(SOC), nano-electronics, MEMS
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参考文献15

  • 1[3]Chang C Y,Sze S M.ULSI Devices.John Wiley & Sons Inc.,2000
  • 2[4]ITRS′2001 http://public.itrs.net/Files/2001ITRS/Home.htm
  • 3[5]Frank J,Dennard R H,Nowak E et al.Proceeding of the IEEE,2001,89:259
  • 4[6]Wong H S P.IBM J.Res.& Dev.,2002,46(2/3):133
  • 5[7]Adan A O,Kenichi Higashi et al.IEEE Trans.Electron Devices,2001,48:2050
  • 6[8]Leland Chang,Stephen Tang et al.IEDM Tech.Dig.,2000,719-722
  • 7[9]Wong H -S,Chan K,Taur Y.IEDM Tech.Dig.,1997,427-430
  • 8[10]Mori K,AnhKim Duong,Richardson W F.IEEE Tran.on Electron Devices,2002,49:61
  • 9[11]Hergenrother J M et al.IEDM Tech.,Dig.,1999,75
  • 10[12]Choi Y K,Chang L,Ranade P et al.IEDM Tech.Dig.,2002,259

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