摘要
报道了一种在0.6～1.65μm波段使用的InGaAs/InP光电探测器。该探测器使用的是外延在InP衬底上的InGaAs材料,探测器结构采用PIN结构通过选择性扩散的方法制作,通过调整掩模尺寸和控制扩散条件,可以制备出具有不同光敏面尺寸及光电特性的探测器。封装后光电探测器在0.6～1.0μm波段的响应度大于0.2A/W,其中,在1.0μm～1.65μm波段的响应度超过0.8A/W,5V偏压下的暗电流小于2nA。经过老化试验,探测器的寿命可以超过105h,器件的可靠性和稳定性已经达到商用标准。由于出色的工艺稳定性和器件性能的一致性,该探测器可做成适用于多通道甚短距离光传输用的探测器阵列。
A wide spectra photo-detector suit the qualification of optoelectronic communication from 0.6 to 1.65 μm was reported.The photo-detector was fabricated on InGaAs extended from InP substrate.The PIN structure was produced by selectively diffusing.This fabricating method proved facility to adjust optoelectronic characteristic of the PD,for example,the diameter of the sensitive window,the response time and the responsibility.The responsibility of the packaged PD can achieve 0.8 A/W at the wavelength from 1.0 to 1.65 μm.The responsibility at 0.6 to 1 μm is not less than 0.2 A/W.The dark current is less than 2 nA under a 5 V bias.The lifetime of the PD can exceed 105 h.The characteristics of the InGaAs/InP PD is suit for the qualification of commercial product.Thanks for the excellent steady fabricating process and coherent characteristic,the PD can be fabricated as PD array for multi-channel very-short-reach communication.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期62-64,共3页
Semiconductor Technology
