摘要
采用与硅集成工艺相兼容的固相反应方法在硅衬底上制备了未经掺杂及掺锰的硅酸锌薄膜 .XRD测试和UV - Vis吸收谱测试证明在高于 880℃的温度下热处理 ,可以获得结晶状态很好的硅酸锌薄膜 .光致发光光谱分析表明 ,未掺杂的薄膜在紫外波段有较弱的发射 ,而掺锰的硅酸锌薄膜在可见光波段有很强的光致发射 .由于硅酸锌薄膜在高温下非常稳定 ,可以与硅集成电路工艺兼容 ,而且发光强度高 。
Undoped and Mn doped zinc silicate (Zn 2SiO 4) thin films on silicon substrate are prepared by solid phase reaction method.The results of the samples are characterized by XRD and UV Vis absorption,which show that willemite Zn 2SiO 4 thin films are formed after the annealing above 880℃.Undoped zinc silicate film shows a weak UV emission while Mn doped willemite shows intense photoluminescence in visible region.It is suggested that zinc silicate films are used in silicon based optoelectronic devices due to their stability and high efficiency.
基金
国家重点基础研究专项经费 (批准号 :G2 0 0 0 0 683 -0 6)
国家自然科学基金 (批准号 :90 2 0 10 3 8)资助项目~~
