摘要
采用三角势近似界面导带弯曲,研究了有限高势垒GaN/Ga1-x Al x N球形量子点中束缚极化子的结合能及其压力效应。数值计算了杂质态与声子之间相互作用对结合能的影响,同时与方形势垒进行了比较。结果表明,随着电子面密度的增加,导带弯曲效应增强,束缚极化子结合能逐渐下降。当电子面密度n s=(6.0,8.0)×1011/cm2且量子点半径R>10 nm时,束缚极化子的结合能趋近于一个相同且较小的值。结合能的极化效应主要来自杂质与光学声子相互作用的贡献。
The bound polaron in a GaN/Ga 1-x Al x N spherical finite-potential quantum dot under hydrostatic pressure is investigated by using a triangular potential to approximate the band bending of the interface potential.We performed numerical calculation on the binding energy of the electronphonon and ion-phonon interactions.The binding energy of a bound polaron is compared with the case of square potential.The results show that the binding energy of bound polaron decreases with the increasing of electron areal density.We observed that the binding energy closes to the different values of electron areal density n s =(6.0,8.0) × 1011/ cm2when the dot radius R > 10 nm.The ion-phonon interactions play a major role in the polaronic effect.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2013年第9期1128-1134,共7页
Chinese Journal of Luminescence
基金
国家自然科学基金(11364028
10964006)
内蒙古自治区自然科学基金重大项目(2013ZD02)
内蒙古农业大学科技创新团队(NDPYTD2010-7)资助项目
关键词
量子点
束缚极化子
电子面密度
quantum dot
the bound polaron
electron areal density
