摘要
采用数值模拟软件TCAD对影响绝缘体上硅(SOI)PIN微剂量探测器灵敏区电荷收集特性的主要因素进行了模拟与分析。分析了3 MeVα粒子在PIN探测器内沉积能量产生的瞬时电流随探测器偏置电压(10 V至50 V)和掺杂浓度、粒子入射方向的变化。模拟结果表明,随着反偏电压的增大,载流子复合效应降低,瞬态电流增加;当n+区域反偏电压为10 V时,由α粒子入射产生的空间电荷在1 ns内几乎全部被收集,电荷收集效率接近100%;辐射产生的瞬时电流随探测器各端掺杂浓度的增大而减小。
2D simulation of the main influence factors on the charge collection characteristics of Silicon On Insulator(SOI) PIN microdosimeter was performed with TCAD software.The transient current in the microdosimeter induced by 3 MeV alpha particle was calculated at different applied voltages(from 10 V to 50 V),doping concentrations and alpha incident directions.The simulation results show that the transient current increases with the increase of reverse bias voltage due to the decrease of the carrier recombination effect;and the space charges induced by alpha particle are almost collected in 1 ns with 10 V applied to the n+ region at the charge collection efficiency nearly 100%;and the transient current decrease when the doping concentration of each region increases.
出处
《信息与电子工程》
2012年第5期616-620,共5页
information and electronic engineering
基金
国家自然科学基金资助项目(11175139)
