摘要
用加热后的KOH水溶液腐蚀GaN材料的N极性面,用以提高GaN基垂直结构发光二极管(LED)的出光效率。经过湿法腐蚀后,构成N极性面的表面晶粒尺寸和密度成为影响垂直结构LED提取效率的主要因素,通过分析不同腐蚀条件下晶粒尺寸和密度与出光效率间的关系,得到最优化的粗化条件,使得器件的提取效率达到最佳。经由浓度为30%、温度为60℃的KOH溶液腐蚀后,未封装的垂直结构LED芯片的提取效率增加了近1倍。
GaN material is etched by hot KOH aqueous solution,which improves the light extraction efficiency of GaN based vertical-electrodes light emitting diodes.The size and density of hexagonal cones on the N-face of GaN are the major factors which affect the vertical-electrodes LEDs' extraction efficiency.Through analyzing the relation between size and density of hexagonal cone and extraction efficiency under different etching condition,we get the etching condition to maximize the LEDs' extraction efficiency.Usin...
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2009年第8期994-996,共3页
Journal of Optoelectronics·Laser
基金
国家"863"计划资助项目
