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参杂GaAs量子点的电子结构 被引量:4

Electronic structures of doped GaAs quantum dots
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摘要 用有效质量近似和少体物理方法计算了在抛物势中,参杂(一个带正电荷)GaAs量子点中有7个极化电子时的本征能量和本征波函数,并从本征波函数中提取的一体、二体密度函数方法得到了电子结构的直观图像,用对称性对量子点中库仑相互作用能和电子结构进行了分析. With the effective-mass approximation and the method of few-body physics, the eigenvalue of energy and the eigen-wave-function of doped( with apositive impurity ) GaAs quantum clots in the polarized seven electrons has been calculated in the parabolic potential energy, and clear the electronic structures has been gained by the methods of the one-body and two-body density function, the electronic structures and the Coulomb interaction energy in the quantum dots are analyzed with the symmetry constraints.
出处 《原子与分子物理学报》 CAS CSCD 北大核心 2009年第3期447-451,共5页 Journal of Atomic and Molecular Physics
基金 国家自然科学基金(10847167 10874122) 广东省自然科学基金(8451027501001445 7007806)
关键词 量子点 电子结构 对称性 quantum dots electronic structures symmetry
作者简介 黄钢明(1958-)男,湖北黄石人,博士,副教授,研究方向为微观少体物理. E-mail:stshgm@mail.sysu.edu.cn
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参考文献12

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同被引文献46

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