摘要
The uniformity of impurity distribution in a melt growth process is significantly determined by the melt convection and melt/crystal interface.Therefore,it is important to investigate the coupling effects of convection,segregation and growth interface shapes in order to largely improve the crystal quality. In this paper,we employ a finite element algorithm to study the vertical Bridgman growth process of Te doped GaSb crystals.The calculation model consists of unsteady state equations of heat transfer,mass transfer and momentum transfer,as well as their correspondingly boundary and initial conditions.A boundary conformal mapping technique is used to obtain the free melt/crystal interface shape and position which is a prior unknown.The set of algebraic equations obtained after finite element discretion is iteratively solved by Newton Raphson method until a given criterion is reached.
The uniformity of impurity distribution in a melt growth process is significantly determined by the melt convection and melt/crystal interface.Therefore,it is important to investigate the coupling effects of convection,segregation and growth interface shapes in order to largely improve the crystal quality. In this paper,we employ a finite element algorithm to study the vertical Bridgman growth process of Te doped GaSb crystals.The calculation model consists of unsteady state equations of heat transfer,mass...
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2000年第S1期17-17,共1页
Journal of Synthetic Crystals
基金
ThisprojectwassupportedbytheClimbProjectofNationalMinistryofScienceandTechnology(GrantNo .95 Yu 34 )andbytheFoundationofNatio
