摘要
Starting from the data obtained recently,that the crystal yttrium aluminum borat e(NAB)is an ideal material for LD pumped microchip laser is demonstrated.Coopera ting with Material Physics Department of Autonoma University of Madrid,Ti:sappir e laser was used to simulate laser diode to pump a NAB crystal sample of 0.3mm t hickness.For incident pump power of 375mW,laser output power at 1.064μm reach 1 57mW with optical to optical efficiency as high as 42%.The corresponding effici e ncy at 1.341μm is 25%.Output laser beams belong to TEM 00 mode.The thresho ld of laser oscillation at 1.064μm were 13,18,30,100 and 140mW for output mirr ors with transmittance of 0.36%,1%,2%,4% and 6% respectively.NAB crystal has a wide and flat absorption band with half high width of 45nm for pump light and so th e temperature shift of the laser diode wavelength will not affect the pumping effi ciency.All the advantages mentioned show the this crystal is obviously an ideal material for LD pumped microchip laser. Therefrom,the possible application of a series of self ativated laser crystal developed in the seventies years 20th century will be discussed in the case of L D lasers have been well developed.
Starting from the data obtained recently,that the crystal yttrium aluminum borat e(NAB)is an ideal material for LD pumped microchip laser is demonstrated.Coopera ting with Material Physics Department of Autonoma University of Madrid,Ti:sappir e laser was used to simulate laser diode to pump a NAB crystal sample of 0.3mm t hickness.For incident pump power of 375mW,laser output power at 1.064μm reach 1 57mW with optical to optical efficiency as high as 42%.The corresponding effici e ncy at 1.341μm is 25%.Outp...
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2000年第S1期217-,共1页
Journal of Synthetic Crystals
