期刊文献+

铁电极化疲劳效应的微分电滞回线谱分析 被引量:2

Differential Hysteresis Loop Analysis for Ferroelectric Polarization Fatigue
在线阅读 下载PDF
导出
摘要 铁电体的极化强度P是根据电滞回线计算的,但漏电电导、顺电电容、电极和样品表面接触层、pn结电阻等的影响使得精确测量回线非常困难.作者引入微分电滞回线谱分析方法,可将上述多种效应从总效应中定量扣除而得到纯铁电性的贡献.对锆钛酸铅陶瓷的测量结果表明,纯铁电微分回线可用少数几个高斯型函数精确拟合.疲劳效应表现为高斯函数个数,峰位U0、峰高I0、峰宽Δ等参数随极化反转次数N的增加持续变化.与电滞回线相比,微分回线是描述极化疲劳的更为严格有效的方法. Polarization P is usually calculated based on ferroelectric hysteresis loop, but it is hard to obtain an accurate loop because of the influence of leakage conductance, paraelectric capacitance, the pn junction between the sample s surface and electrodes,A new method called differential hysteresis loop(DHL) has been introduced which is able to divide the above influences quantitatively and obtain pure ferroelectric effects. DHL of PZT ceramics can be well fitted by several Gaussian functions, furthermore, po...
出处 《四川大学学报(自然科学版)》 CAS CSCD 北大核心 2005年第S1期79-82,共4页 Journal of Sichuan University(Natural Science Edition)
基金 广东省科技计划项目(C1102) 广东省自然科学基金项目(04009806)
关键词 极化疲劳 微分电滞回线 锆钛酸铅 polarization fatigue differential hysteresis loop PZT
  • 相关文献

同被引文献17

  • 1朱贵文,周伟华,沈韩,陈敏.铁电体的极化疲劳和历史记忆效应[J].中山大学学报(自然科学版),2005,44(4):40-42. 被引量:2
  • 2陈敏,朱贵文,周伟华,沈韩,李景德.铁电微分回线谱参数和极化疲劳[J].无机材料学报,2007,22(3):461-464. 被引量:1
  • 3RAMESH R, AGGARWAL S, AUCIELLO O. Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories[ J]. Materials Sci- ence and Engineering, 2001,32: 191 -236.
  • 4TAGANTSEV A K, STOLICHNOV I, COLLA E L, et al. Polarization Fatigue in Ferroelectric Films [ J ]. J Appl Phys, 2001,90(3) : 1387 -1420.
  • 5GRUVERMAN A, RODRIGUEZ B J, NEMANICH R J, et al. Nanoscale observation of photoinduced domain pin- ning and investigation of imprint behavior in ferroelectric thin films [ J ]. Journal of Applied Physics, 2002,92 (5) : 2734 - 2739.
  • 6GROSSMANN M, LOHSE O, BOLTEN D, et al. Life- time estimation due to imprint failure in ferroelectric Sr- Bi2Ta2O9 thin films [ J ]. Applied Physics Letters, 2000,76 (3) : 363 - 365.
  • 7LI KWOK TUNG, LO V C. Simulation of oxygen vacancy induced phenomena in ferroelectric thin films[ J]. J Appl Phys, 2005,97 (034107 ) : 1 - 8.
  • 8OKATAN M B, MANTESE J V, ALPAY S P. Effect of space charge on the polarization hysteresis characteristics of monolithic and compositionally graded ferroelectrics [J]. Acta Materialia, 2010,58:39-48.
  • 9YU JUN, DONG XIAOMING, ZHOU WENLI, et al. Study on the I - V characteristics of ferroelectric thin film systems with the structure of MFSM [ J ]. Materials Science and Engineering B, 2000,76 : 22 - 25.
  • 10ZHU G D, LUO X Y, ZHANG J H, et al. Imprint effect in ferroelectric poly (vinylidene fluoride-trifluoro- ethylene) thin films [ J ]. Journal of Applied Physics, 2009,106(7) :074113.

引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部