摘要
根据纳米MOSFET的紧凑模型,采用HSPICE的蒙特卡罗分析方法,研究随机掺杂波动(RDF)引起的纳米MOSFET模拟/射频性能包括栅极电容、截止频率、跨导和输出电导等参数的变化标准差,同时通过改变栅介质的介电常数(ε)和等效氧化层厚度(dox),观测其对RDF引起的模拟/射频性能变化的影响。结果显示,RDF引起的MOSFET模拟/射频性能参数变化表现出不同的特征,而在适当选择较高的ε和dox情况下,RDF引起的模拟/射频性能参数变化标准差有一定程度的减小(绝对标准偏差整体降低到接近0,相对标准偏差整体最大降低10%),为通过改变等效栅介质抑制RDF的影响提供了实验依据。
According to the compact model of nanometer MOSFETs,HSPICE Monte Carlo analysis method was used to investigate the variation standard deviations of nanometer MOSFETs analog/RF performance parameters caused by random dopant fluctuation(RDF).These parameters included gate capa-citance,cutoff frequency,transconductance and output conductance.Meanwhile,the effects of adjusting the dielectric constant(ε)and the equivalent oxide layer thickness(dox)of the gate dielectric on the analog/RF performance variations caused by RDF were observed.The results show that RDF in MOSFETs causes different fluctuation characteristics with different parameters in analog/RF performance,and the standard deviations of the analog/RF performance parameter variations caused by RDF can be reduced to a certain extend by appropriately choosing higherεand dox(the absolute standard deviation as a whole is reduced to nearly 0,and the relative standard deviation is reduced by up to 10%),which provides expe-rimental evidence for suppressing RDF-induced variation by adjusting the equivalent gate dielectric.
作者
司鹏
姚丰雪
章凯
吕伟锋
Si Peng;Yao Fengxue;Zhang Kai;LüWeifeng(Key Laboratory of RF Circuits and Systems for Ministry of Education,Hangzhou Dianzi University,Hangzhou 310018,China)
出处
《半导体技术》
CAS
北大核心
2020年第2期145-149,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(61571171)
浙江省自然科学基金资助项目(LY18F040005).
作者简介
通信作者:吕伟锋(1977—),男,浙江桐乡人,博士,副教授,研究方向为集成电路CAD、纳米CMOS电路、工艺波动效应及统计建模。E-mail:lvwf@hdu.edu.cn;司鹏(1996—),男,河南信阳人,硕士研究生,研究方向为集成纳米器件可变性
