摘要
铌酸锂物理性能稳定,电光、声光及非线性光学效应优异,是集成光学器件中重要的光学材料。然而,目前铌酸锂材料的加工工艺无法满足复杂且小型化的集成光路发展需求。聚焦离子束(FIB)是一种无掩膜、高精度的加工技术,但同时会引入离子注入和材料表面非晶化等损伤。研究了FIB离子剂量对铌酸锂刻蚀深度及表面粗糙度的影响,在离子剂量大于0.25 nC·μm-2条件下实现了亚纳米表面粗糙度的刻蚀。通过采用共聚焦喇曼光谱法表征FIB刻蚀前后铌酸锂喇曼光谱的变化,证明了在离子剂量为0.1~1.0 nC·μm-2下FIB刻蚀对铌酸锂薄膜造成的整体损伤小(喇曼峰展宽的平均变化小于5%),对使用FIB进行精密、可控的铌酸锂结构加工具有重要参考意义。
Lithium niobate is an important optical material in integrated optical devices owning to its stable physical properties,excellent electro-optic,acousto-optic and nonlinear optical properties.However,the current processing technology of lithium niobate materials can not meet needs of complex and miniaturized integrated optical path development.Focused ion beam(FIB)is a mask-less and high precise processing technology.Meanwhile,the FIB can induce damages of ion implantation and material surface amorphization.The influences of the ion dose of the FIB on the etching depth and surface roughness of the lithium niobate were studied.The etching of subnanometer surface roughness was realized at the ion dose of more than0.25 nC·μm-2.Confocal Raman spectroscopy was used to characterize the Raman spectrum changes of the lithium niobate before and after FIB etching.The result shows that the overall damage caused by FIB etching on the lithium niobate thin film is small(the average change of the Raman peak broadening is less than 5%)at the ion dose of 0.1-1.0 nC·μm-2,which has important reference significance for the precise and controllable processing of lithium niobate structures by FIB.
作者
瞿敏妮
李辉
乌李瑛
沈贇靓
田苗
王英
程秀兰
Qu Minni;Li Hui;Wu Liying;Shen Yunliang;Tian Miao;Wang Ying;Cheng Xiulan(Center for Advanced Electronic Materials and Devices,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Renishaw(Shanghai)Trading Co.,Ltd.,Shanghai 200436,China)
出处
《微纳电子技术》
北大核心
2020年第3期230-236,共7页
Micronanoelectronic Technology
基金
国家科技部“十三五”高性能计算重点研发计划资助项目(2016YFB0200205)
2018年度上海研发公共服务平台建设资助项目(18DZ2295400)
上海交通大学决策咨询课题资助项目(JCZXSJB2018-022,JCZXSJB2019-005)
上海交通大学转化医学交叉研究基金资助项目(ZH2018ZDB01).
作者简介
通信作者:王英,E-mail:wangying@sjtu.edu.cn;瞿敏妮(1985—),女,上海人,博士,助理研究员,主要研究方向为半导体加工与测量表征。
