摘要
Joining of ceramic and metal is a key component in microelectronic device manufacturing,in which the integrity of bonded interface is critical in the performance and stability of the devices.Current methods with a problem of thick transition layer at the interface impeded heat flow,which degraded device service life seriously.Herein,we propose a laser-assisted bonding approach to join ceramic to metal directly without any intermediate material.By focusing the laser on the surface of β-Si_(3)N_(4) ceramic,the Si microcrystalline layer with stacked α-Si_(3)N_(4) nanocrystals was prepared first.The face-centered cubic(fcc)Si and hexagonal close-packed(hcp)β-Si_(3)N_(4) substrate take the coherent orientation relations of[001]_(fcc)║[0001]_(hcp) and(220)_(fcc)║(10■0)_(hcp).Then,the defect-free Si_(3)N_(4)/Cu bonded interface obtained by the reaction of the formed Si and Cu at elevated temperature in the 805-900℃range for 30 min demonstrated a strong and stable joining of ceramic to metal.The introduction of the laser provides a novel approach to join ceramics to metals,and the ceramic/metal component is expected to be a new configuration for package substrate in high-power device applications.
基金
supported by National Natural Science Foundation of China (grant Nos.51875130 and 51775138)
Shandong Provincial Natural Science Foundation of China (No.ZR2019MEE091)
作者简介
Corresponding authors at:Duo Liu,State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China.E-mail addresses:liuduo0376@163.com;Corresponding authors at:Xiaoguo Song,State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China.E-mail addresses:xgsong@hit.edu.cn
