摘要
负偏置温度不稳定性(NBTI:Negative Bias Temperature Instability)是半导体先进工艺MOSFET器件最普遍、最严重的老化效应之一,严重地影响着集成电路的可靠性。研究了沟道长度对国产28 nm pMOSFET器件MBTI的影响,结果表明:针对单一沟道器件,沟道长度越短,NBTI效应越严重。但是,针对多个器件单元串联组成的长沟道器件,NBTI效应只与每个器件单元的沟道长度有关,与器件单元数量无关。
NBTI is one of the most common and serious aging effects of semiconductor advanced process MOSFET devices,which seriously affects the reliability of integrated circuits.The effect of channel length on NBTI of domestic 28 nm p MOSFET devices is studied.The results show that for a single channel device,the shorter the channel length is,the more serious the NBTI effect will be;for long channel device which are constructed by connecting multiple device units in series,NBTI is only related to the channel length of each device unit,and has nothing to do with the number of device units.
作者
韦拢
韦覃如
赵鹏
李政槺
周镇峰
林晓玲
章晓文
高汭
WEI Long;WEI Qinru;ZHAO Peng;LI Zhengkang;ZHOU Zhenfeng;LIN Xiaoling;ZHANG Xiaowen;GAO Rui(CEPREI,Guangzhou 511370,China;Science and Technology on Reliability Physics and Application of Electrical Component Laboratory,Guangzhou 511370,China;South China University of Technology,School of Electronic and Information Engineering,Guangzhou 510641,China)
出处
《电子产品可靠性与环境试验》
2022年第S02期40-42,共3页
Electronic Product Reliability and Environmental Testing
基金
广州市科技计划项目(202002030299)资助
作者简介
韦拢(1996—),男,广西河池人,工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室助理工程师,硕士,从事MOSFET可靠性方向的研究工作;通信作者:赵鹏(1988—),男,湖南湘潭人,工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室工程师,博士,从事MOSFET可靠性方向的研究工作。
