摘要
基于0.13μm SiGe BiCMOS工艺,设计了一种25 Gbit/s的光接收机前端放大电路单片集成的放大电路。该电路实现了光接收机前端放大电路的单片集成,并采用带反馈系统的跨阻放大器、电感峰化、自动增益控制电路等设计有效提高了增益、带宽和系统稳定性。经仿真与测试,该设计增益达到69.9 dB,带宽为19.1 GHz,并在工业级芯片工作温度(-40℃~+85℃)下带宽误差不超过0.1%。该芯片工作时需要的供电电流为45 mA,功耗为81 mW,信号抖动RMS值为5.8 ps,具有良好的性能和稳定性。本设计提供了一种能够适用于100 Gbit/s(25 Gbit/s×4线)光互连系统的设计方案,具有广泛的应用前景。
A 25 Gb/s optical receiver front-end amplifying circuit was designed in a 0.13μm SiGe BiCMOS process.This amplifying circuit realized the monolithic integration of the front-end amplifier circuit of the optical receiver.The transimpedance amplifier with feedback system,inductance peaking technology,automatic gain control circuit and other disign were adopted to improve the gain,bandwidth and system stability effectively.The results of simulation and experimental test show that the gain is up to 69.9 dB with a bandwidth of 19.1 GHz.Moreover,the bandwidth error is kept less than 0.1%under the industrial-grade working temperature(-40℃~+85℃).The power supply current is 45 mA with the power consumption of 81 mW,and the jitter RMS(root mean square)value is 5.8 ps,which indicate a good performance and stability.This design proposes a design method that can be applied to 100 Gbit/s(25 Gbit/s×4 lines)optical interconnection system,which has a broad application prospect.
作者
陈宇星
徐永佳
孔谋夫
廖希异
吴克军
徐开凯
CHEN Yuxing;XU YongJia;KONG Moufu;LIAO Xiyi;WU Kejun;XU Kaikai(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.Technol of China,Chengdu 610054,P.R.China;The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing400060,P.R.China)
出处
《微电子学》
CAS
北大核心
2022年第6期936-941,共6页
Microelectronics
基金
国家自然科学基金资助项目(62174018)
四川省杰出青年科技人才基金(2020JDJQ0022)
国家重点研发计划政府间国际科技创新合作重点专项资助项目(2018YFE0181500)
关键词
SiGe
BiCMOS工艺
光接收机
跨阻放大器
光通信
SiGe BiCMOS process
optical receiver
transimpedance amplifier(TIA)
optical communication
作者简介
陈宇星(1998—),男(汉族),安徽安庆人,硕士研究生,研究方向为光电集成技术;通信作者:徐开凯(1984—),男(汉族),重庆人,博士,教授,博士生导师,从事光电集成技术研究工作。
