摘要
提出了一种适用于低电压工作的毫米波AlN/GaN MIS-HEMT器件,开展了材料外延结构的设计,在SiC衬底上生长了AlN/GaN外延材料。基于此材料开展了器件制作,优化了高温快速退火工艺,获得良好的欧姆接触电阻。对所制备的器件进行直流测试,结果显示,电流输出能力为2.4 A/mm,跨导极值为518 mS/mm,小信号f_(t)达到85 GHz,f_(max)大于141 GHz。在5G毫米波段28 GHz频率点测试了大信号特性,当V_(DS)=3 V时,输出功率密度为0.55 W/mm,功率附加效率(PAE)为40.1%;当V_(DS)=6 V时,输出功率密度为1.6 W/mm,PAE达到47.8%。该器件具有低压毫米波应用的潜力。
A millimeter-wave AlN/GaN MIS-HEMT device for low operating voltage application is proposed.An epitaxial material was redesigned,and an AlN barrier epitaxial layer was grown on the SiC substrate.Based on this SiC substrate,several MIS-HEMT devices were fabricated.The ohmic contact process was optimized in the aspect of high temperature RTA.The DC tests were performed for the fabricated devices.The results show that the maximum drain current is 2.4 A/mm,the extrinsic peak g_(m)is 518 mS/mm,the small signal f_(t)is 85 GHz,and the f_(max)is over 141 GHz.The large signal tests at 28 GHz of 5G millimeter-wave band show that the output power density(P_(OUT))is 0.55 W/mm,and the power additional efficiency(PAE)is 40.1%at V_(DS)=3 V.At V_(DS)=6 V,the P_(OUT)is 1.6 W/mm,and the PAE is 47.8%.The AlN/GaN MIS-HEMT device demonstrate its potential in future millimeter-wave applications.
作者
陈晓娟
张一川
袁静
高润华
殷海波
李艳奎
刘新宇
魏珂
CHEN Xiaojuan;ZHANG Yichuan;YUAN Jing;GAO Runhua;YIN Haibo;LI Yankui;LIU Xinyu;WEI Ke(Xidian University,Xi’an 710071,P.R.China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,P.R.China;Institute of Microelectronics of Tianjin Binhai New Area,Tianjin 300459,P.R.China)
出处
《微电子学》
CAS
北大核心
2023年第5期904-909,共6页
Microelectronics
基金
国家自然科学基金资助项目(62234009)
作者简介
陈晓娟(1979—),女,(汉族),重庆人,硕士,正高级工程师,从事宽禁带半导体器件和电路研究工作。
