摘要
直拉单晶硅是目前用于制造集成电路的主流衬底材料。随着集成电路的特征尺寸不断减小,对单晶硅衬底的晶体缺陷类型、密度、尺寸等提出日益苛刻的要求。因此,深入研究掌握直拉单晶硅晶体缺陷的形成机理并且快速准确地表征这些晶体缺陷,成为指导直拉单晶硅晶体生长工艺改进、实现晶体缺陷有效调控的重要技术手段。本文首先综述了晶体生长过程中控制缺陷形成的v/G理论的发展,并介绍了探测不同原生缺陷的表征方法。最后,简述了本文在缺陷表征方法的最新研究进展情况。
Czochralski monocrystalline silicon is the most common substrate material currently applied to integrated circuits fabrication.Due to the continuous reduction of the feature size of integrated circuits,increasingly stringent requirements are placed on the crystal defect type,density and size of the single silicon substrate.Therefore,in-depth research and mastery of the formation mechanism of Czochralski monocrystalline silicon crystal defects and rapid and accurate characterization of these crystal defects have become important technical means to guide the improvement of Czochralski monocrystalline silicon crystal growth process and achieve effective control of crystal defects.In this paper,the development of the v/G theory for controlling the formation of defects in crystal growth is reviewed and the characterization methods for detecting different grown-in defects are introduced.Finally,the latest research progress in defect characterization methods is briefly described.
作者
刘赟
薛忠营
魏星
李炜
LIU Yun;XUE Zhongying;WEI Xing;LI Wei(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;Zing Semiconductor Corporation,Shanghai 201306,China;National Silicon Industry Group,Shanghai 201306,China)
出处
《微纳电子与智能制造》
2022年第1期64-74,共11页
Micro/nano Electronics and Intelligent Manufacturing
关键词
直拉单晶硅
v/G理论
表征方法
Czochralski monocrystalline silicon
v/G theory
characterization methods
作者简介
通信作者:魏星,研究员,主要研究方向为先进硅基衬底材料,包括300 mm硅片、SOI制造技术及材料缺陷分析。E-mail:xwei@mail.sim.ac.cn;通信作者:李炜,博士,上海硅产业集团股份有限公司执行副总裁、上海新昇半导体科技有限公司董事长,主要研究方向为先进硅基衬底材料,包括300 mm硅片、SOI制造技术及材料缺陷分析。E-mail:wli@sh-nsig.com
