摘要
Based on the BL09 terminal of China Spallation Neutron Source(CSNS),single event upset(SEU)cross sections of14 nm fin field-effect transistor(FinFET)and 65 nm quad data rate(QDR)static random-access memories(SRAMs)are obtained under different incident directions of neutrons:front,back and side.It is found that,for both technology nodes,the“worst direction”corresponds to the case that neutrons traverse package and metallization before reaching the sensitive volume.The SEU cross section under the worst direction is 1.7-4.7 times higher than those under other incident directions.While for multiple-cell upset(MCU)sensitivity,side incidence is the worst direction,with the highest MCU ratio.The largest MCU for the 14 nm FinFET SRAM involves 8 bits.Monte-Carlo simulations are further performed to reveal the characteristics of neutron induced secondary ions and understand the inner mechanisms.
作者
Shao-Hua Yang
Zhan-Gang Zhang
Zhi-Feng Lei
Yun Huang
Kai Xi
Song-Lin Wang
Tian-Jiao Liang
Teng Tong
Xiao-Hui Li
Chao Peng
Fu-Gen Wu
Bin Li
杨少华;张战刚;雷志锋;黄云;习凯;王松林;梁天骄;童腾;李晓辉;彭超;吴福根;李斌(School of Physics and Optoeletronic Engineering,Guangdong University of Technology,Guangzhou 510006,China;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou 510370,China;Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China;Spallation Neutron Source Science Center,Dongguan 523803,China;School of Microelectronics,South China University of Technology,Guangzhou 510640,China)
基金
Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2019B010145001)
the National Natural Science Foundation of China(Grant Nos.12075065 and 12175045)
the Applied Fundamental Research Project of Guangzhou City,China(Grant No.202002030299)
作者简介
Corresponding author:张战刚,E-mail:zhangangzhang@163.com
