We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor ...We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the OaN- based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of -40 μA （line current density 2.3mA/cm） at a collector bias Vc = 3 V, and a low reverse leakage of 3nA at Vc = -3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency mieroelectronics or nanoelectronics.展开更多
Due to their unique characteristics,two-dimensional(2D)materials have drawn great attention as promising candidates for the next generation of integrated circuits,which generate a calculation unit with a new working m...Due to their unique characteristics,two-dimensional(2D)materials have drawn great attention as promising candidates for the next generation of integrated circuits,which generate a calculation unit with a new working mechanism,called a logic transistor.To figure out the application prospects of logic transistors,exploring the temperature dependence of logic characteristics is important.In this work,we explore the temperature effect on the electrical characteristic of a logic transistor,finding that changes in temperature cause transformation in the calculation:logical output converts from‘AND’at 10 K to‘OR’at 250 K.The transformation phenomenon of temperature regulation in logical output is caused by energy band which decreases with increasing temperature.In the experiment,the indirect band gap of MoS2 shows an obvious decrease from 1.581 eV to 1.535 eV as the temperature increases from 10 K to 250 K.The change of threshold voltage with temperature is consistent with the energy band,which confirms the theoretical analysis.Therefore,as a promising material for future integrated circuits,the demonstrated characteristic of 2D transistors suggests possible application for future functional devices.展开更多
基金Supported by the Natural Science Foundation of Jiangsu Province under Grant No BK20160400the Science and Technology Project of Suzhou under Grant No SZS201508
文摘We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the OaN- based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of -40 μA （line current density 2.3mA/cm） at a collector bias Vc = 3 V, and a low reverse leakage of 3nA at Vc = -3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency mieroelectronics or nanoelectronics.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61925402,61851402,and 61734003)Science and Technology Commission of Shanghai Municipality,China(Grant No.19JC1416600)+1 种基金National Key Research and Development Program of China(Grant No.2017YFB0405600)Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program,China(Grant No.18SG01).
文摘Due to their unique characteristics,two-dimensional(2D)materials have drawn great attention as promising candidates for the next generation of integrated circuits,which generate a calculation unit with a new working mechanism,called a logic transistor.To figure out the application prospects of logic transistors,exploring the temperature dependence of logic characteristics is important.In this work,we explore the temperature effect on the electrical characteristic of a logic transistor,finding that changes in temperature cause transformation in the calculation:logical output converts from‘AND’at 10 K to‘OR’at 250 K.The transformation phenomenon of temperature regulation in logical output is caused by energy band which decreases with increasing temperature.In the experiment,the indirect band gap of MoS2 shows an obvious decrease from 1.581 eV to 1.535 eV as the temperature increases from 10 K to 250 K.The change of threshold voltage with temperature is consistent with the energy band,which confirms the theoretical analysis.Therefore,as a promising material for future integrated circuits,the demonstrated characteristic of 2D transistors suggests possible application for future functional devices.
