Recently, the physics-of-failure(PoF) method has been more and more popular in engineering to understand the failure mechanisms(FMs) of products.However, due to the lack of system modeling methods and problem-solving ...Recently, the physics-of-failure(PoF) method has been more and more popular in engineering to understand the failure mechanisms(FMs) of products.However, due to the lack of system modeling methods and problem-solving algorithms,the information of FMs cannot be used to evaluate system reliability.This paper presents a system reliability evaluation method with failure mechanism tree(FMT) considering physical dependency(PDEP) such as competition, trigger, acceleration, inhibition, damage accumulation, and parameter combination.And the binary decision diagram(BDD) analytical algorithm is developed to establish a system reliability model.The operation rules of ite operators for generating BDD are discussed.The flow chart of system reliability evaluation method based on FMT and BDD is proposed.The proposed method is applied in the case of an electronic controller drive unit.Results show that the method is effective to evaluate system reliability from the perspective of FM.展开更多
A lifetime prediction method for high-reliability tantalum （Ta） capacitors was proposed, based on multiple degradation measures and grey model （GM）. For analyzing performance degradation data, a two-parameter mode...A lifetime prediction method for high-reliability tantalum （Ta） capacitors was proposed, based on multiple degradation measures and grey model （GM）. For analyzing performance degradation data, a two-parameter model based on GM was developed. In order to improve the prediction accuracy of the two-parameter model, parameter selection based on particle swarm optimization （PSO） was used. Then, the new PSO-GM（1, 2, co） optimization model was constructed, which was validated experimentally by conducting an accelerated testing on the Ta capacitors. The experiments were conducted at three different stress levels of 85, 120, and 145℃. The results of two experiments were used in estimating the parameters. And the reliability of the Ta capacitors was estimated at the same stress conditions of the third experiment. The results indicate that the proposed method is valid and accurate.展开更多
A relevance vector machine (RVM) based fault diagnosis method was presented for non-linear circuits. In order to simplify RVM classifier, parameters selection based on particle swarm optimization (PSO) and preprocessi...A relevance vector machine (RVM) based fault diagnosis method was presented for non-linear circuits. In order to simplify RVM classifier, parameters selection based on particle swarm optimization (PSO) and preprocessing technique based on the kurtosis and entropy of signals were used. Firstly, sinusoidal inputs with different frequencies were applied to the circuit under test (CUT). Then, the resulting frequency responses were sampled to generate features. The frequency response was sampled to compute its kurtosis and entropy, which can show the information capacity of signal. By analyzing the output signals, the proposed method can detect and identify faulty components in circuits. The results indicate that the fault classes can be classified correctly for at least 99% of the test data in example circuit. And the proposed method can diagnose hard and soft faults.展开更多
InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-D...InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.展开更多
基金supported by the National Natural Science Foundation of China (6150301462073009)。
文摘Recently, the physics-of-failure(PoF) method has been more and more popular in engineering to understand the failure mechanisms(FMs) of products.However, due to the lack of system modeling methods and problem-solving algorithms,the information of FMs cannot be used to evaluate system reliability.This paper presents a system reliability evaluation method with failure mechanism tree(FMT) considering physical dependency(PDEP) such as competition, trigger, acceleration, inhibition, damage accumulation, and parameter combination.And the binary decision diagram(BDD) analytical algorithm is developed to establish a system reliability model.The operation rules of ite operators for generating BDD are discussed.The flow chart of system reliability evaluation method based on FMT and BDD is proposed.The proposed method is applied in the case of an electronic controller drive unit.Results show that the method is effective to evaluate system reliability from the perspective of FM.
基金Project(Z132012) supported by the Second Five Technology-based Fund in Science and Industry Bureau of ChinaProject(1004GK0032) supported by General Armament Department for the Common Issues of Military Electronic Components,China
文摘A lifetime prediction method for high-reliability tantalum （Ta） capacitors was proposed, based on multiple degradation measures and grey model （GM）. For analyzing performance degradation data, a two-parameter model based on GM was developed. In order to improve the prediction accuracy of the two-parameter model, parameter selection based on particle swarm optimization （PSO） was used. Then, the new PSO-GM（1, 2, co） optimization model was constructed, which was validated experimentally by conducting an accelerated testing on the Ta capacitors. The experiments were conducted at three different stress levels of 85, 120, and 145℃. The results of two experiments were used in estimating the parameters. And the reliability of the Ta capacitors was estimated at the same stress conditions of the third experiment. The results indicate that the proposed method is valid and accurate.
基金Project(Z132012)supported by the Second Five Technology-based in Science and Industry Bureau of ChinaProject(YWF1103Q062)supported by the Fundemental Research Funds for the Central Universities in China
文摘A relevance vector machine (RVM) based fault diagnosis method was presented for non-linear circuits. In order to simplify RVM classifier, parameters selection based on particle swarm optimization (PSO) and preprocessing technique based on the kurtosis and entropy of signals were used. Firstly, sinusoidal inputs with different frequencies were applied to the circuit under test (CUT). Then, the resulting frequency responses were sampled to generate features. The frequency response was sampled to compute its kurtosis and entropy, which can show the information capacity of signal. By analyzing the output signals, the proposed method can detect and identify faulty components in circuits. The results indicate that the fault classes can be classified correctly for at least 99% of the test data in example circuit. And the proposed method can diagnose hard and soft faults.
基金Project(Z132012A001)supported by the Technical Basis Research Program in Science and Industry Bureau of ChinaProject(61201028,60876009)supported by the National Natural Science Foundation of China
文摘InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.
