One-port surface acoustic wave resonators(SAWRs) are fabricated on semi-insulating high-quality bulk GaN and GaN film substrates, respectively. The semi-insulating GaN substrates are grown by hydride vapor phase epita...One-port surface acoustic wave resonators(SAWRs) are fabricated on semi-insulating high-quality bulk GaN and GaN film substrates, respectively. The semi-insulating GaN substrates are grown by hydride vapor phase epitaxy(HVPE)and doped with Fe. The anisotropy of Rayleigh propagation and the electromechanical coupling coefficient in Fe-doped GaN are investigated. The difference in resonance frequency between the SAWs between [1120] GaN and [1100] GaN is about 0.25% for the Rayleigh propagation mode, which is smaller than that of non-intentionally doped GaN film(~1%)reported in the literature. The electromechanical coupling coefficient of Fe-doped GaN is about 3.03%, which is higher than that of non-intentionally doped GaN film. The one-port SAWR fabricated on an 8-μm Fe-doped GaN/sapphire substrate has a quality factor of 2050, and that fabricated on Fe-doped bulk GaN has a quality factor as high as 3650. All of our results indicate that high-quality bulk GaN is a very promising material for application in SAW devices.展开更多
The responsivity and the noise of a detector determine the sensitivity. Thermal energy usually affects both the responsivity and the noise spectral density. In this work, the noise characteristics and responsivity of ...The responsivity and the noise of a detector determine the sensitivity. Thermal energy usually affects both the responsivity and the noise spectral density. In this work, the noise characteristics and responsivity of an antenna-coupled AlGaN/GaN high-electron-mobility-transistor(HEMT) terahertz detector are evaluated at temperatures elevated from 300 K to 473 K. Noise spectrum measurement and a simultaneous measurement of the source–drain conductance and the terahertz photocurrent allow for detailed analysis of the electrical characteristics, the photoresponse, and the noise behavior. The responsivity is reduced from 59 mA/W to 11 mA/W by increasing the detector temperature from 300 K to 473 K. However,the noise spectral density maintains rather constantly around 1–2 pA/Hz^(1/2) at temperatures below 448 K, above which the noise spectrum abruptly shifts from Johnson-noise type into flicker-noise type and the noise density is increased up to one order of magnitude. The noise-equivalent power(NEP) is increased from 22 pW/Hz^(1/2) at 300 K to 60 pW/Hz^(1/2) at 448 K mainly due to the reduction in mobility. Above 448 K, the NEP is increased up to 1000 pW/Hz^(1/2) due to the strongly enhanced noise. The sensitivity can be recovered by cooling the detector back to room temperature.展开更多
Antenna-coupled field-effect-transistors(FETs) offer high sensitivity for terahertz detection. Both the magnitude and the polarity of the response signal are sensitive to the localized terahertz field under the gate. ...Antenna-coupled field-effect-transistors(FETs) offer high sensitivity for terahertz detection. Both the magnitude and the polarity of the response signal are sensitive to the localized terahertz field under the gate. The ability of accurate sensing the intensity pattern is required for terahertz imaging systems. Here, we report artefacts in the intensity pattern of a focused terahertz beam around 1 THz by scanning a silicon-lens and antenna coupled AlGaN/GaN high-electron-mobility-transistor(HEMT) detector. The origin of the image distortion is found to be connected with one of the antenna blocks by probing the localized photocurrents as a function of the beam location and the frequency. Although the exact distortion is found with our specific antenna design, we believe similar artefacts could be commonplace in antenna-coupled FET terahertz detectors when the beam spot becomes comparable with the antenna size. To eliminate such artefacts, new antenna designs are welcomed to achieve strong asymmetry in the terahertz field distribution under the gate while maintaining a more symmetric radiation pattern for the whole antenna.展开更多
Efficient coupling of terahertz electromagnetic wave with the active region in a terahertz detector is required to enhance the optical sensitivity. In this work, we demonstrate direct integration of a field-effect-tra...Efficient coupling of terahertz electromagnetic wave with the active region in a terahertz detector is required to enhance the optical sensitivity. In this work, we demonstrate direct integration of a field-effect-transistor（FET） terahertz detector chip at the waveguide port of a horn antenna. Although the integration without a proper backshot is rather preliminary, the noise-equivalent power is greatly reduced from 2.7 nW/Hz^（1/2） for the bare detector chip to 76 pW/Hz^（1/2） at340 GHz. The enhancement factor of about 30 is confirmed by simulations revealing the effective increase in the energy flux density seen by the detector. The simulation further confirms the frequency response of the horn antenna and the onchip antennas. A design with the detector chip fully embedded within a waveguide cavity could be made to further enhance the coupling efficiency.展开更多
Electrocatalytic reduction of carbon dioxide is one of the most effective strategies to achieve carbon neutrality and energy sustainability.Although high-value multi-carbon products have been widely studied,limited el...Electrocatalytic reduction of carbon dioxide is one of the most effective strategies to achieve carbon neutrality and energy sustainability.Although high-value multi-carbon products have been widely studied,limited electrocatalysts have been reported for the selective conversion of ethane.More importantly,the factors tuning the selectivity between ethane and ethylene have not been clarified.Here,Zn@Cu nanowire arrays(Zn@Cu-NWAs) catalyst is proposed to stimulate the maintenance of efficient CO_(2)-to-C_(2)H_(6) conversion at high current densities.Meanwhile,in order to investigate the factors affecting the interconversion between ethane and ethylene,the counterpart catalyst that facilitates C–C coupling to ethylene was also synthesized.Time-of-flight secondary-ion mass spectroscopy(TOF-SIMS),in-situ Raman spectroscopy,and simulation results show that Zn@Cu-NWAs can provide a localized proton corridor environment for the formation of ethane,accelerating the further proton-coupled CO_(2) reduction reaction(CO_(2)RR)kinetics.Hence,this catalyst delivered an ethane Faraday efficiency of over 65% at-1.14 V vs.RHE with a total current density of 142.3 mA/cm^(2).This work provides a new perspective on regulating the local microenvironment to modify the selectivity of multi-carbon products.展开更多
Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency a...Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.展开更多
Extensive efforts have recently been devoted to the construction of aqueous rechargeable sodium-ion batteries(ARSIBs)for large-scale energy-storage applications due to their desired properties of abundant sodium resou...Extensive efforts have recently been devoted to the construction of aqueous rechargeable sodium-ion batteries(ARSIBs)for large-scale energy-storage applications due to their desired properties of abundant sodium resources and inherently safer aqueous electrolytes.However,it is still a significant challenge to develop highly flexible ARSIBs ascribing to the lack of flexible electrode materials.In this work,nanocube-like KNiFe(CN)6(KNHCF)and rugby balllike NaTi2(PO4)3(NTP)are grown on carbon nanotube fibers via simple and mild methods as the flexible binder-free cathode(KNHCF@CNTF)and anode(NTP@CNTF),respectively.Taking advantage of their high conductivity,fast charge transport paths,and large accessible surface area,the as-fabricated binder-free electrodes display admirable electrochemical performance.Inspired by the remarkable flexibility of the binder-free electrodes and the synergy of KNHCF@CNTF and NTP@CNTF,a high-performance quasi-solid-state fiber-shaped ARSIB(FARSIB)is successfully assembled for the first time.Significantly,the as-assembled FARSIB possesses a high capacity of 34.21 mAh cm?3 and impressive energy density of 39.32 mWh cm?3.More encouragingly,our FARSIB delivers superior mechanical flexibility with only 5.7%of initial capacity loss after bending at 90°for over 3000 cycles.Thus,this work opens up an avenue to design ultraflexible ARSIBs based on all binder-free electrodes for powering wearable and portable electronics.展开更多
High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time o...High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2-μm-thick InSb epilayer grown at 450℃ with a Ⅴ/Ⅲ ratio of 5 and an indium pre-deposition time of 2.5s exhibits the optimum material quality, with a root-meansquare surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 10~4 cm^2/V·s. These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10 mV with the input voltage of 1 V at 9.3 mT and the electron mobility of 3.2 × 10~4 cm^2/V·s is determined, which indicates a strong potential for Hall applications.展开更多
Recently,it has been proposed that spin torque oscillators(STOs)and spin torque diodes could be used as artificial neurons and synapses to directly process microwave signals,which could lower latency and power consump...Recently,it has been proposed that spin torque oscillators(STOs)and spin torque diodes could be used as artificial neurons and synapses to directly process microwave signals,which could lower latency and power consumption greatly.However,one critical challenge is to make the microwave emission frequency of the STO stay constant with a varying input current.In this work,we study the microwave emission characteristics of STOs based on magnetic tunnel junction with MgO cap layer.By applying a small magnetic field,we realize the invariability of the microwave emission frequency of the STO,making it qualified to act as artificial neuron.Furthermore,we have simulated an artificial neural network using STO neuron to recognize the handwritten digits in the Mixed National Institute of Standards and Technology database,and obtained a high accuracy of 92.28%.Our work paves the way for the development of radio-frequency-oriented neuromorphic computing systems.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0403002)the National Science Fund for Distinguished Young Scholars,China(Grant No.Y3CHC11001)the National Natural Science Foundation of China(Grant No.11604368)
文摘One-port surface acoustic wave resonators(SAWRs) are fabricated on semi-insulating high-quality bulk GaN and GaN film substrates, respectively. The semi-insulating GaN substrates are grown by hydride vapor phase epitaxy(HVPE)and doped with Fe. The anisotropy of Rayleigh propagation and the electromechanical coupling coefficient in Fe-doped GaN are investigated. The difference in resonance frequency between the SAWs between [1120] GaN and [1100] GaN is about 0.25% for the Rayleigh propagation mode, which is smaller than that of non-intentionally doped GaN film(~1%)reported in the literature. The electromechanical coupling coefficient of Fe-doped GaN is about 3.03%, which is higher than that of non-intentionally doped GaN film. The one-port SAWR fabricated on an 8-μm Fe-doped GaN/sapphire substrate has a quality factor of 2050, and that fabricated on Fe-doped bulk GaN has a quality factor as high as 3650. All of our results indicate that high-quality bulk GaN is a very promising material for application in SAW devices.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFF0100501)the National Natural Science Foundation of China(Grant Nos.61771466,61775231,and 61611530708)+1 种基金the Six Talent Peaks of Jiangsu Province,China(Grant No.XXRJ-079)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2017372)
文摘The responsivity and the noise of a detector determine the sensitivity. Thermal energy usually affects both the responsivity and the noise spectral density. In this work, the noise characteristics and responsivity of an antenna-coupled AlGaN/GaN high-electron-mobility-transistor(HEMT) terahertz detector are evaluated at temperatures elevated from 300 K to 473 K. Noise spectrum measurement and a simultaneous measurement of the source–drain conductance and the terahertz photocurrent allow for detailed analysis of the electrical characteristics, the photoresponse, and the noise behavior. The responsivity is reduced from 59 mA/W to 11 mA/W by increasing the detector temperature from 300 K to 473 K. However,the noise spectral density maintains rather constantly around 1–2 pA/Hz^(1/2) at temperatures below 448 K, above which the noise spectrum abruptly shifts from Johnson-noise type into flicker-noise type and the noise density is increased up to one order of magnitude. The noise-equivalent power(NEP) is increased from 22 pW/Hz^(1/2) at 300 K to 60 pW/Hz^(1/2) at 448 K mainly due to the reduction in mobility. Above 448 K, the NEP is increased up to 1000 pW/Hz^(1/2) due to the strongly enhanced noise. The sensitivity can be recovered by cooling the detector back to room temperature.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFF0100501)the National Natural Science Foundation of China(Grant Nos.61771466,61775231,and 61611530708)+3 种基金the Six Talent Peaks Project of Jiangsu Province,China(Grant No.XXRJ-079)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2017372)the Russian Foundation for Basic Research(Grant No.17-52-53063)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20160400)
文摘Antenna-coupled field-effect-transistors(FETs) offer high sensitivity for terahertz detection. Both the magnitude and the polarity of the response signal are sensitive to the localized terahertz field under the gate. The ability of accurate sensing the intensity pattern is required for terahertz imaging systems. Here, we report artefacts in the intensity pattern of a focused terahertz beam around 1 THz by scanning a silicon-lens and antenna coupled AlGaN/GaN high-electron-mobility-transistor(HEMT) detector. The origin of the image distortion is found to be connected with one of the antenna blocks by probing the localized photocurrents as a function of the beam location and the frequency. Although the exact distortion is found with our specific antenna design, we believe similar artefacts could be commonplace in antenna-coupled FET terahertz detectors when the beam spot becomes comparable with the antenna size. To eliminate such artefacts, new antenna designs are welcomed to achieve strong asymmetry in the terahertz field distribution under the gate while maintaining a more symmetric radiation pattern for the whole antenna.
基金supported by the National Key Research and Development Program of China(Grant Nos.2016YFF0100501 and 2016YFC0801203)the National Natural Science Foundation of China(Grant Nos.61611530708,11403084,61401456,61401297,and 61505242)+2 种基金the Six Talent Peaks Project of Jiangsu Province,China(Grant No.XXRJ-079)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2017372)the Russian Foundation for Basic Research(Grant No.17-52-53063)
文摘Efficient coupling of terahertz electromagnetic wave with the active region in a terahertz detector is required to enhance the optical sensitivity. In this work, we demonstrate direct integration of a field-effect-transistor（FET） terahertz detector chip at the waveguide port of a horn antenna. Although the integration without a proper backshot is rather preliminary, the noise-equivalent power is greatly reduced from 2.7 nW/Hz^（1/2） for the bare detector chip to 76 pW/Hz^（1/2） at340 GHz. The enhancement factor of about 30 is confirmed by simulations revealing the effective increase in the energy flux density seen by the detector. The simulation further confirms the frequency response of the horn antenna and the onchip antennas. A design with the detector chip fully embedded within a waveguide cavity could be made to further enhance the coupling efficiency.
基金financially supported by the Outstanding Youth Project of Guangdong Natural Science Foundation (2021B1515020051)the financial support from the Basic and Applied Basic Research Foundation of Guangdong Province (2021B1515120024, 2022A1515011804)。
文摘Electrocatalytic reduction of carbon dioxide is one of the most effective strategies to achieve carbon neutrality and energy sustainability.Although high-value multi-carbon products have been widely studied,limited electrocatalysts have been reported for the selective conversion of ethane.More importantly,the factors tuning the selectivity between ethane and ethylene have not been clarified.Here,Zn@Cu nanowire arrays(Zn@Cu-NWAs) catalyst is proposed to stimulate the maintenance of efficient CO_(2)-to-C_(2)H_(6) conversion at high current densities.Meanwhile,in order to investigate the factors affecting the interconversion between ethane and ethylene,the counterpart catalyst that facilitates C–C coupling to ethylene was also synthesized.Time-of-flight secondary-ion mass spectroscopy(TOF-SIMS),in-situ Raman spectroscopy,and simulation results show that Zn@Cu-NWAs can provide a localized proton corridor environment for the formation of ethane,accelerating the further proton-coupled CO_(2) reduction reaction(CO_(2)RR)kinetics.Hence,this catalyst delivered an ethane Faraday efficiency of over 65% at-1.14 V vs.RHE with a total current density of 142.3 mA/cm^(2).This work provides a new perspective on regulating the local microenvironment to modify the selectivity of multi-carbon products.
基金Project supported by the National Natural Science Foundation of China (Grant No.11974379)the National Key Basic Research and Development Program of China (Grant No.2021YFC2203400)Jiangsu Vocational Education Integrated Circuit Technology “Double-Qualified” Famous Teacher Studio (Grant No.2022-13)。
文摘Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.
基金supported by the Fundamental Research Funds for the Central Universities(No.020514380183)the National Natural Science Foundation of China(No.51703241)+1 种基金the Key Research Program of Frontier Science of Chinese Academy of Sciences(No.QYZDB-SSW-SLH031)the Thousand Youth Talents Plan,and the Science and Technology Project of Nanchang(2017-SJSYS-008).
文摘Extensive efforts have recently been devoted to the construction of aqueous rechargeable sodium-ion batteries(ARSIBs)for large-scale energy-storage applications due to their desired properties of abundant sodium resources and inherently safer aqueous electrolytes.However,it is still a significant challenge to develop highly flexible ARSIBs ascribing to the lack of flexible electrode materials.In this work,nanocube-like KNiFe(CN)6(KNHCF)and rugby balllike NaTi2(PO4)3(NTP)are grown on carbon nanotube fibers via simple and mild methods as the flexible binder-free cathode(KNHCF@CNTF)and anode(NTP@CNTF),respectively.Taking advantage of their high conductivity,fast charge transport paths,and large accessible surface area,the as-fabricated binder-free electrodes display admirable electrochemical performance.Inspired by the remarkable flexibility of the binder-free electrodes and the synergy of KNHCF@CNTF and NTP@CNTF,a high-performance quasi-solid-state fiber-shaped ARSIB(FARSIB)is successfully assembled for the first time.Significantly,the as-assembled FARSIB possesses a high capacity of 34.21 mAh cm?3 and impressive energy density of 39.32 mWh cm?3.More encouragingly,our FARSIB delivers superior mechanical flexibility with only 5.7%of initial capacity loss after bending at 90°for over 3000 cycles.Thus,this work opens up an avenue to design ultraflexible ARSIBs based on all binder-free electrodes for powering wearable and portable electronics.
基金Supported by the Hundred Talents Program of Chinese Academy of Sciencesthe CAS Interdisciplinary Innovation Team+1 种基金the National Natural Science Foundation of China under Grant Nos 61874179,61804161 and 61605236the Key Frontier Scientific Research Program of Chinese Academy of Sciences under Grant No QYZDB-SSW-JSC014
文摘High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2-μm-thick InSb epilayer grown at 450℃ with a Ⅴ/Ⅲ ratio of 5 and an indium pre-deposition time of 2.5s exhibits the optimum material quality, with a root-meansquare surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 10~4 cm^2/V·s. These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10 mV with the input voltage of 1 V at 9.3 mT and the electron mobility of 3.2 × 10~4 cm^2/V·s is determined, which indicates a strong potential for Hall applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11974379 and 12204357)K.C.Wong Education Foundation(Grant No.GJTD2019-14)+2 种基金Jiangxi Province“Double Thousand Plan”(Grant No.S2019CQKJ2638)the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant No.22KB140017)Wuxi University Research Start-up Fund for Introduced Talents(Grant No.2022r006)。
文摘Recently,it has been proposed that spin torque oscillators(STOs)and spin torque diodes could be used as artificial neurons and synapses to directly process microwave signals,which could lower latency and power consumption greatly.However,one critical challenge is to make the microwave emission frequency of the STO stay constant with a varying input current.In this work,we study the microwave emission characteristics of STOs based on magnetic tunnel junction with MgO cap layer.By applying a small magnetic field,we realize the invariability of the microwave emission frequency of the STO,making it qualified to act as artificial neuron.Furthermore,we have simulated an artificial neural network using STO neuron to recognize the handwritten digits in the Mixed National Institute of Standards and Technology database,and obtained a high accuracy of 92.28%.Our work paves the way for the development of radio-frequency-oriented neuromorphic computing systems.
