We investigate the anisotropic band structure and its evolution under tensile strains along different crystallographic directions in bulk black phosphorus(BP)using angle-resolved photoemission spectroscopy and density...We investigate the anisotropic band structure and its evolution under tensile strains along different crystallographic directions in bulk black phosphorus(BP)using angle-resolved photoemission spectroscopy and density functional theory.The results show that there are band crossings in the Z-L(armchair)direction.展开更多
Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering.In recent years,lift-off and transfer technology of the epitaxial oxide thin ...Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering.In recent years,lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations.Moreover,twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures.A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process,which could provide some insight in to the physical phenomena.In this work,the La_(0.67)Sr_(0.33)MnO_(3)(001)/0.7Pb(Mg_(1/3)Nb_(2/3))O_(3)-0.3PbTiO_(3)(011)(LSMO/PMN-PT)heterostructures with 45.and 0.twist angles were assembled via water-etching and transfer process.The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO<110>.A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO[110]easy axis is observed for the 45°Sample by applying a 7.2 kV cm^(−1)electrical field,significantly different from a uniaxial anisotropy with LSMO[100]easy axis for the 0°Sample.The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45°twist angle causes different lattice distortion of LSMO,thereby enhancing both the fourfold and uniaxial anisotropy.This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.展开更多
Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural a...Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.展开更多
Against the backdrop of electromagnetic space integration,the radio system of equipment platforms,such as next-generation aircraft,must possess multifunctional integration and electromagnetic stealth performance.Meanw...Against the backdrop of electromagnetic space integration,the radio system of equipment platforms,such as next-generation aircraft,must possess multifunctional integration and electromagnetic stealth performance.Meanwhile,the equipment platforms need to evolve towards flat structures.These requirements pose significant technical challenges for antenna system design.The antenna must possess ultra-wideband to facilitate multi-function integration through the use of continuous radio frequency synthetic aperture.In order to ensure good aerodynamics of the flat airborne platform,it is required to implement conformal design,while the ultra-low profile is the greatest challenge in conformal design.Against this background,this work proposes a novel airborne tightly coupled antenna with ultra-low profile,ultra-wideband,and vertical-polarized omnidirectional radiation.The antenna unit utilizes a long slot structure and implements circular conformal design,where the resistive frequency selection surface is used to expand the operating bandwidth.This antenna has a profile height of only 0.047 times the low-frequency wavelength.Simulation and measurement results show that it achieves an impedance bandwidth of nearly 12∶1 with omnidirectional beam coverage,which meets the requirements of multifunctional future airborne antennas.展开更多
Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode ofα-Ga_(2)O_(3) heteroepitaxial layers was modulated by ...Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode ofα-Ga_(2)O_(3) heteroepitaxial layers was modulated by tuning miscut angles(θ)from 0°to 7°off the(1010)direction of sapphire(0002)substrate.On flat sapphire surfaces,the growth undergoes a typical three-dimensional(3D)growth mode due to the random nucleation on wide substrate terraces,as evidenced by the hillock morphology and high dislocation densities.As the miscut angle increases toθ=5°,the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei,and consequently,the nucleation is guided by terrace edges,which energetically facilitates the growth mode transition into the desirable two-dimensional(2D)coherent growth.Consequently,the mean surface roughness decreases to only 0.62 nm,accompanied by a significant reduction in screw and edge dislocations to 0.16×10^(7) cm^(-2)and 3.58×10^(9) cm^(-2),respectively.However,the further increment of miscut angles toθ=7°shrink the terrace width less than nucleation distance,and the step-bunching growth mode is dominant.In this circumstance,the misfit strain is released in the initial growth stage,resulting in surface morphology degradation and increased dislocation densities.展开更多
Aiming to solve the bottleneck problem of electromagnetic scattering simulation in the scenes of extremely large-scale seas and ships,a high-frequency method by using graphics processing unit(GPU)parallel acceleration...Aiming to solve the bottleneck problem of electromagnetic scattering simulation in the scenes of extremely large-scale seas and ships,a high-frequency method by using graphics processing unit(GPU)parallel acceleration technique is proposed.For the implementation of different electromagnetic methods of physical optics(PO),shooting and bouncing ray(SBR),and physical theory of diffraction(PTD),a parallel computing scheme based on the CPU-GPU parallel computing scheme is realized to balance computing tasks.Finally,a multi-GPU framework is further proposed to solve the computational difficulty caused by the massive number of ray tubes in the ray tracing process.By using the established simulation platform,signals of ships at different seas are simulated and their images are achieved as well.It is shown that the higher sea states degrade the averaged peak signal-to-noise ratio(PSNR)of radar image.展开更多
We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in...We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in XRD 2θ-ωscans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces.For(AlN)m/(GaN)n SLs with an average Al composition of 50%,we have obtained an electron density up to 4.48×10^(19)cm^(-3)and a resistivity of 0.002Ω·cm,and a hole density of 1.83×10^(18)cm^(-3)with a resistivity of 3.722Ω·cm,both at room temperature.Furthermore,the(AlN)m/(GaN)n SLs exhibit a blue shift for their photoluminescence peaks,from 403 nm to 318 nm as GaN is reduced from n=11 to n=4 MLs,reaching the challenging UVB wavelength range.The results demonstrate that the(AlN)m/(GaN)n SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN,making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.展开更多
Magnetic domain wall(DW), as one of the promising information carriers in spintronic devices, have been widely investigated owing to its nonlinear dynamics and tunable properties. Here, we theoretically and numericall...Magnetic domain wall(DW), as one of the promising information carriers in spintronic devices, have been widely investigated owing to its nonlinear dynamics and tunable properties. Here, we theoretically and numerically demonstrate the DW dynamics driven by the synergistic interaction between current-induced spin-transfer torque(STT) and voltage-controlled strain gradient(VCSG) in multiferroic heterostructures. Through electromechanical and micromagnetic simulations, we show that a desirable strain gradient can be created and it further modulates the equilibrium position and velocity of the current-driven DW motion. Meanwhile, an analytical Thiele's model is developed to describe the steady motion of DW and the analytical results are quite consistent with the simulation data. Finally, we find that this combination effect can be leveraged to design DW-based biological neurons where the synergistic interaction between STT and VCSG-driven DW motion as integrating and leaking motivates mimicking leaky-integrate-and-fire(LIF) and self-reset function. Importantly, the firing response of the LIF neuron can be efficiently modulated, facilitating the exploration of tunable activation function generators, which can further help improve the computational capability of the neuromorphic system.展开更多
The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density function...The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY （Y = S, Se, Te） at octahedral sites in a semiconductor by the calculations of density of states （DOS）, leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands （IBs） in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO.展开更多
Developing advanced stealth devices to cope with radar-infrared(IR)fusion detection and diverse application scenarios is increasingly demanded,which faces significant challenges due to conflicting microwave and IR clo...Developing advanced stealth devices to cope with radar-infrared(IR)fusion detection and diverse application scenarios is increasingly demanded,which faces significant challenges due to conflicting microwave and IR cloaking mechanisms and functional integration limitations.Here,we propose a multiscale hierarchical structure design,integrating wrinkled MXene IR shielding layer and flexible Fe_(3)O_(4)@C/PDMS microwave absorption layer.The top wrinkled MXene layer induces the intensive diffuse reflection effect,shielding IR radiation signals while allowing microwave to pass through.Meanwhile,the permeable microwaves are assimilated into the bottom Fe_(3)O_(4)@C/PDMS layer via strong magneto-electric synergy.Through theoretical and experimental optimization,the assembled stealth devices realize a near-perfect stealth capability in both X-band(8–12 GHz)and long-wave infrared(8–14μm)wavelength ranges.Specifically,it delivers a radar cross-section reduction of−20 dB m^(2),a large apparent temperature modulation range(ΔT=70℃),and a low average IR emissivity of 0.35.Additionally,the optimal device demonstrates exceptional curved surface conformability,self-cleaning capability(contact angle≈129°),and abrasion resistance(recovery time≈5 s).This design strategy promotes the development of multispectral stealth technology and reinforces its applicability and durability in complex and hostile environments.展开更多
The spherically layered media theory has wide applications for electromagnetic wave scattering analysis.Due to the involved Bessel functions,the conventional formulations of spherically layered media theory suffer fro...The spherically layered media theory has wide applications for electromagnetic wave scattering analysis.Due to the involved Bessel functions,the conventional formulations of spherically layered media theory suffer from numerical overflow or underflow when the Bessel function’s order is large,the argument is small or the argument has a large imaginary part.The first two issues have been solved recently by employing small-argument asymptotic formulas of Bessel functions,while the third issue remains unsolved.In this paper,the Bessel functions in the conventional formulation of the theory are replaced by scaled Bessel functions which have good numerical properties for high loss media,and stable formulas are derived.Numerical tests show that this approach can work properly with very high lossy media.Also,this approach can be seamlessly combined with the stable computation method for cases of small argument and large order of Bessel functions.展开更多
We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic t...We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga_2O_3 interface is realized by tuning the conductivity of amorphous Ga_2O_3 films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga_2O_3 interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity(PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA,a high detectivity of 9.82×10^(12) cm·Hz^(1/2)·W^(-1), a fast response time of 243.9 μs, and a high ultraviolet C(UVC)-toultraviolet A(UVA) rejection ratio of 103. The promoting performance is attributed primarily to the reduction of the subgap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.展开更多
Developing highly efficient magnetic microwave absorb-ers(MAs)is crucial,and yet challenging for anti-corrosion properties in extremely humid and salt-induced foggy environments.Herein,a dual-oxide shell of ZnO/Al_(2)...Developing highly efficient magnetic microwave absorb-ers(MAs)is crucial,and yet challenging for anti-corrosion properties in extremely humid and salt-induced foggy environments.Herein,a dual-oxide shell of ZnO/Al_(2)O_(3) as a robust barrier to FeSiAl core is introduced to mitigate corrosion resistance.The FeSiAl@ZnO@Al_(2)O_(3) layer by layer hybrid structure is realized with atomic-scale precision through the atomic layer deposition technique.Owing to the unique hybrid structure,the FeSiAl@ZnO@Al_(2)O_(3) exhibits record-high micro-wave absorbing performance in low-frequency bands covering L and S bands with a minimum reflection loss(RLmin)of-50.6 dB at 3.4 GHz.Compared with pure FeSiAl(RLmin of-13.5 dB,a bandwidth of 0.5 GHz),the RLmin value and effective bandwidth of this designed novel absorber increased up to~3.7 and~3 times,respectively.Fur-thermore,the inert ceramic dual-shells have improved 9.0 times the anti-corrosion property of FeSiAl core by multistage barriers towards corrosive medium and obstruction of the electric circuit.This is attributed to the large charge transfer resistance,increased impedance modulus|Z|0.01 Hz,and frequency time constant of FeSiAl@ZnO@Al_(2)O_(3).The research demonstrates a promising platform toward the design of next-generation MAs with improved anti-corrosion properties.展开更多
Wearable devices with efficient thermal management and electromagnetic interference(EMI) shielding are highly desirable for improving human comfort and safety. Herein, a multifunctional wearable carbon fibers(CF) @ po...Wearable devices with efficient thermal management and electromagnetic interference(EMI) shielding are highly desirable for improving human comfort and safety. Herein, a multifunctional wearable carbon fibers(CF) @ polyaniline(PANI)/silver nanowires(Ag NWs) composites with a “branch-trunk” interlocked micro/nanostructure were achieved through "three-in-one" multi-scale design. The reasonable assembly of the three kinds of one-dimensional(1D) materials can fully exert their excellent properties i.e., the superior flexibility of CF, the robustness of PANI, and the splendid conductivity of Ag NWs. Consequently, the constructed flexible composite demonstrates enhanced mechanical properties with a tensile stress of 1.2 MPa, which was almost 6 times that of the original material. This is mainly attributed to the fact that the PNAI(branch) was firmly attached to the CF(trunk) through polydopamine(PDA), forming a robust interlocked structure. Meanwhile, the composite possesses excellent thermal insulation and heat preservation capacity owing to the synergistically low thermal conductivity and emissivity. More importantly, the conductive path of the composite established by the three 1D materials greatly improved its EMI shielding property and Joule heating performance at low applied voltage. This work paves the way for rational utilization of the intrinsic properties of 1D materials, as well as provides a promising strategy for designing wearable electromagnetic protection and thermal energy management devices.展开更多
We fabricated 4H-SiC ultraviolet avalanche photodiode(APD)arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs.Based on a...We fabricated 4H-SiC ultraviolet avalanche photodiode(APD)arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs.Based on a statistical correlation study of individual device performance and structural defect mapping revealed by molten KOH etching,it is determined with high confidence level that even a single threading dislocation within APD active region would lead to apparent device performance degradation,including increase of dark current near breakdown voltage,premature breakdown and reduction of single photon detection efficiency at fixed dark count rate.展开更多
Propagation characteristics of surface acoustic waves（SAWs） in ZnO films/glass substrates are theoretically investigated by the three-dimensional（3D） finite element method. At first, for（11ˉ20） ZnO films/glass ...Propagation characteristics of surface acoustic waves（SAWs） in ZnO films/glass substrates are theoretically investigated by the three-dimensional（3D） finite element method. At first, for（11ˉ20） ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the [1ˉ100] direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate h/λ, Rayleigh wave has a maximum k^2 of 2.4% in（90°, 56.5°, 0°） ZnO film/glass substrate structure; Love wave has a maximum k^2 of 3.81% in（56°, 90°, 0°） ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency（TCF） can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k^2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.展开更多
Nonpolar(1120)plane In_(x)Ga_(1-x)N epilayers comprising the entire In content(x)range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties...Nonpolar(1120)plane In_(x)Ga_(1-x)N epilayers comprising the entire In content(x)range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties were studied intensively.It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33,even though the crystalline quality was gradually declined,which was accompanied by the appearance of phase separation in the In_(x)Ga_(1-x)N layer.Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for x varied from 0.06 to 0.33.Furthermore,the corresponding average lifetime(τ_(1/e))of carriers for the nonpolar In Ga N film was decreased from 406 ps to 267 ps,indicating that a high-speed modulation bandwidth can be expected for nonpolar In Ga N-based light-emitting diodes.Moreover,the bowing coefficient(b)of the(1120)plane In Ga N was determined to be 1.91 e V for the bandgap energy as a function of x.展开更多
In order to realize industrial production of hydrogen through water splitting,it is essential to develop a cost-efficient and scalable approach to synthesize nonprecious electrocatalysts with sufficiently high activit...In order to realize industrial production of hydrogen through water splitting,it is essential to develop a cost-efficient and scalable approach to synthesize nonprecious electrocatalysts with sufficiently high activity and stability to replace commercial noble-metal-based electrocatalysts.Herein we synthesize cobalt phosphide nanoparticles dispersed within nitrogen-doped carbon nanotube network(CP@NCNT) via scalable spray drying and thermal treatments.As a multifunctional electrocatalyst,the CP@NCNT hybrid delivers outstanding activity for HER(in both acidic and alkaline electrolytes),OER and overall water splitting.Remarkably,it shows an ultra-low overpotental of 94 mV to obtain 10 mA cm-2 in HER.It also demonstrates outstanding activity in overall water splitting,requiring only 1.619 V to deliver 10 mA cm-2with more than 72 h’ long-term stability.The combination of notable performance,multi-functionality and highly scalable spray-drying synthesis method enables this material as a novel and cost-efficient transition metal-based electrocatalysts for overall water splitting.展开更多
Graphene and other two-dimensional materials have recently emerged as promising candidates for next-generation, high-performance photonics. In this paper, the progress of research into photodetectors and other electro...Graphene and other two-dimensional materials have recently emerged as promising candidates for next-generation, high-performance photonics. In this paper, the progress of research into photodetectors and other electro-optical devices based on graphene integrated silicon photonics is briefly reviewed. We discuss the performance metrics, photo-response mechanisms, and experimental results of the latest graphene photodetectors integrated with silicon photonics, We also lay out the unavoidable performance trade-offs in meeting the requirements of various applications. In addition, we describe other opto-electronic devices based on this idea. Integrating two-dimensional materials with a silicon platform provides new opportunities in advanced integrated photonics.展开更多
SnO2 nanocrystal and rare-earth Eu^3＋ ion co-doped SiO2 thin films are prepared by sol-gel and spin coating methods. The formation of tetragonal rutile structure SnO2 nanocrystals with a uniform distribution is confi...SnO2 nanocrystal and rare-earth Eu^3＋ ion co-doped SiO2 thin films are prepared by sol-gel and spin coating methods. The formation of tetragonal rutile structure SnO2 nanocrystals with a uniform distribution is confirmed by X-ray diffraction and transmission electron microscopy. Fourier transform infrared spectroscopy is used to investigate the densities of the hydroxyl groups, and it is found that the emission intensity from the 5Do-TF2 transitions of the Eu^3＋ ions is enhanced by two orders of magnitude due to energy transfer from the oxygen-vacancy-related defects of the SnO2 nanocrystals to nearby Eu^3＋ ions. The influences of the amounts of Sn and the post-annealing temperatures are systematically evaluated to further understand the mechanism of energy transfer. The luminescence intensity ratio of Eu^3＋ ions from electric dipole transition and magnetic dipole transition indicate the different probable locations of Eu^3＋ ions in the sol-gel thin film, which are further discussed based on temperature-dependent photoluminescence measurements.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12104216,12241403,and 61974061)the National Key R&D Program of China(Grant No.2021YFB3601600)the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20140054)。
文摘We investigate the anisotropic band structure and its evolution under tensile strains along different crystallographic directions in bulk black phosphorus(BP)using angle-resolved photoemission spectroscopy and density functional theory.The results show that there are band crossings in the Z-L(armchair)direction.
基金supported by the National Key Research and Development Program of China (Grant No. 2021YFB3201800)Natural Science Foundation of China (Grant Nos. U22A2019, 91964109, 52372123)+3 种基金State Key Laboratory for Mechanical Behavior of Materials (No. 20222405)Innovation Capability Support Program of Shaanxi (Grant No. 2021TD-12)National 111 Project of China (B14040)support from the Instrumental Analysis Center of Xi’an Jiaotong University
文摘Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering.In recent years,lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations.Moreover,twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures.A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process,which could provide some insight in to the physical phenomena.In this work,the La_(0.67)Sr_(0.33)MnO_(3)(001)/0.7Pb(Mg_(1/3)Nb_(2/3))O_(3)-0.3PbTiO_(3)(011)(LSMO/PMN-PT)heterostructures with 45.and 0.twist angles were assembled via water-etching and transfer process.The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO<110>.A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO[110]easy axis is observed for the 45°Sample by applying a 7.2 kV cm^(−1)electrical field,significantly different from a uniaxial anisotropy with LSMO[100]easy axis for the 0°Sample.The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45°twist angle causes different lattice distortion of LSMO,thereby enhancing both the fourfold and uniaxial anisotropy.This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2021YFB3601000 and 2021YFB3601002)the National Natural Science Foundation of China (Grant Nos.62074077,61921005,61974062,62204121,and 61904082)+1 种基金Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No.BE2021008-2)the China Postdoctoral Science Foundation (Grant No.2020M671441)。
文摘Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.
基金supported by the National Natural Science Foundation of China under Grant No.62101103.
文摘Against the backdrop of electromagnetic space integration,the radio system of equipment platforms,such as next-generation aircraft,must possess multifunctional integration and electromagnetic stealth performance.Meanwhile,the equipment platforms need to evolve towards flat structures.These requirements pose significant technical challenges for antenna system design.The antenna must possess ultra-wideband to facilitate multi-function integration through the use of continuous radio frequency synthetic aperture.In order to ensure good aerodynamics of the flat airborne platform,it is required to implement conformal design,while the ultra-low profile is the greatest challenge in conformal design.Against this background,this work proposes a novel airborne tightly coupled antenna with ultra-low profile,ultra-wideband,and vertical-polarized omnidirectional radiation.The antenna unit utilizes a long slot structure and implements circular conformal design,where the resistive frequency selection surface is used to expand the operating bandwidth.This antenna has a profile height of only 0.047 times the low-frequency wavelength.Simulation and measurement results show that it achieves an impedance bandwidth of nearly 12∶1 with omnidirectional beam coverage,which meets the requirements of multifunctional future airborne antennas.
基金Project supported by the National Key Research and Development Program of China (Grant No.2022YFB3605403)the National Natural Science Foundation of China (Grant Nos.62234007,62241407,62293521,62304238,62241407,U21A20503,and U21A2071)+2 种基金the Key-Area Research and Development Program of Guangdong Province,China (Grant No.2020B010174002)the Cultivation Project for Youth Teachers in Jiangsu ProvinceJiangsu Funding Program for Excellent Postdoctoral Talent。
文摘Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode ofα-Ga_(2)O_(3) heteroepitaxial layers was modulated by tuning miscut angles(θ)from 0°to 7°off the(1010)direction of sapphire(0002)substrate.On flat sapphire surfaces,the growth undergoes a typical three-dimensional(3D)growth mode due to the random nucleation on wide substrate terraces,as evidenced by the hillock morphology and high dislocation densities.As the miscut angle increases toθ=5°,the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei,and consequently,the nucleation is guided by terrace edges,which energetically facilitates the growth mode transition into the desirable two-dimensional(2D)coherent growth.Consequently,the mean surface roughness decreases to only 0.62 nm,accompanied by a significant reduction in screw and edge dislocations to 0.16×10^(7) cm^(-2)and 3.58×10^(9) cm^(-2),respectively.However,the further increment of miscut angles toθ=7°shrink the terrace width less than nucleation distance,and the step-bunching growth mode is dominant.In this circumstance,the misfit strain is released in the initial growth stage,resulting in surface morphology degradation and increased dislocation densities.
基金supported by the Opening Foundation of the Agile and Intelligence Computing Key Laboratory of Sichuan Province under Grant No.H23004the Chengdu Municipal Science and Technology Bureau Technological Innovation R&D Project(Key Project)under Grant No.2024-YF08-00106-GX.
文摘Aiming to solve the bottleneck problem of electromagnetic scattering simulation in the scenes of extremely large-scale seas and ships,a high-frequency method by using graphics processing unit(GPU)parallel acceleration technique is proposed.For the implementation of different electromagnetic methods of physical optics(PO),shooting and bouncing ray(SBR),and physical theory of diffraction(PTD),a parallel computing scheme based on the CPU-GPU parallel computing scheme is realized to balance computing tasks.Finally,a multi-GPU framework is further proposed to solve the computational difficulty caused by the massive number of ray tubes in the ray tracing process.By using the established simulation platform,signals of ships at different seas are simulated and their images are achieved as well.It is shown that the higher sea states degrade the averaged peak signal-to-noise ratio(PSNR)of radar image.
基金Project supported by the National Key R&D Program of China(Grant No.2022YFB3605600)the National Natural Science Foundation of China(Grant No.61974065)+3 种基金the Key R&D Project of Jiangsu Province,China(Grant Nos.BE2020004-3 and BE2021026)Postdoctoral Fellowship Program of CPSF(Grant No.GZC20231098)the Jiangsu Special ProfessorshipCollaborative Innovation Center of Solid State Lighting and Energy-saving Electronics。
文摘We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in XRD 2θ-ωscans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces.For(AlN)m/(GaN)n SLs with an average Al composition of 50%,we have obtained an electron density up to 4.48×10^(19)cm^(-3)and a resistivity of 0.002Ω·cm,and a hole density of 1.83×10^(18)cm^(-3)with a resistivity of 3.722Ω·cm,both at room temperature.Furthermore,the(AlN)m/(GaN)n SLs exhibit a blue shift for their photoluminescence peaks,from 403 nm to 318 nm as GaN is reduced from n=11 to n=4 MLs,reaching the challenging UVB wavelength range.The results demonstrate that the(AlN)m/(GaN)n SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN,making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.
基金supported by the National Natural Science Foundation of China (Grant Nos. 51902300, 11972333, and 11902316)the Zhejiang Provincial Natural Science Foundation of China (Grant Nos. LY21F010011, LZ19A020001, and LZ23A020002)the Fundamental Research Funds for the Provincial Universities of Zhejiang (Grant Nos. 2021YW02 and 2022YW88)。
文摘Magnetic domain wall(DW), as one of the promising information carriers in spintronic devices, have been widely investigated owing to its nonlinear dynamics and tunable properties. Here, we theoretically and numerically demonstrate the DW dynamics driven by the synergistic interaction between current-induced spin-transfer torque(STT) and voltage-controlled strain gradient(VCSG) in multiferroic heterostructures. Through electromechanical and micromagnetic simulations, we show that a desirable strain gradient can be created and it further modulates the equilibrium position and velocity of the current-driven DW motion. Meanwhile, an analytical Thiele's model is developed to describe the steady motion of DW and the analytical results are quite consistent with the simulation data. Finally, we find that this combination effect can be leveraged to design DW-based biological neurons where the synergistic interaction between STT and VCSG-driven DW motion as integrating and leaking motivates mimicking leaky-integrate-and-fire(LIF) and self-reset function. Importantly, the firing response of the LIF neuron can be efficiently modulated, facilitating the exploration of tunable activation function generators, which can further help improve the computational capability of the neuromorphic system.
基金Project supported by the State Key Program for Basic Research of China (Grant No.2011CB302003)the Project of High Technology Research and Development Program of China (Grant No.2007AA03Z404)+1 种基金the National Natural Science Foundation of China (Grant Nos.60990312,61274058,61025020,and 61073101)the Natural Science Foundation of Anhui Province,China (Grant No.1208085QF116)
文摘The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY （Y = S, Se, Te） at octahedral sites in a semiconductor by the calculations of density of states （DOS）, leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands （IBs） in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO.
基金financial support from the National Nature Science Foundation of China(No.52273247)the National Science and Technology Major Project of China(J2019-VI-0017-0132).
文摘Developing advanced stealth devices to cope with radar-infrared(IR)fusion detection and diverse application scenarios is increasingly demanded,which faces significant challenges due to conflicting microwave and IR cloaking mechanisms and functional integration limitations.Here,we propose a multiscale hierarchical structure design,integrating wrinkled MXene IR shielding layer and flexible Fe_(3)O_(4)@C/PDMS microwave absorption layer.The top wrinkled MXene layer induces the intensive diffuse reflection effect,shielding IR radiation signals while allowing microwave to pass through.Meanwhile,the permeable microwaves are assimilated into the bottom Fe_(3)O_(4)@C/PDMS layer via strong magneto-electric synergy.Through theoretical and experimental optimization,the assembled stealth devices realize a near-perfect stealth capability in both X-band(8–12 GHz)and long-wave infrared(8–14μm)wavelength ranges.Specifically,it delivers a radar cross-section reduction of−20 dB m^(2),a large apparent temperature modulation range(ΔT=70℃),and a low average IR emissivity of 0.35.Additionally,the optimal device demonstrates exceptional curved surface conformability,self-cleaning capability(contact angle≈129°),and abrasion resistance(recovery time≈5 s).This design strategy promotes the development of multispectral stealth technology and reinforces its applicability and durability in complex and hostile environments.
文摘The spherically layered media theory has wide applications for electromagnetic wave scattering analysis.Due to the involved Bessel functions,the conventional formulations of spherically layered media theory suffer from numerical overflow or underflow when the Bessel function’s order is large,the argument is small or the argument has a large imaginary part.The first two issues have been solved recently by employing small-argument asymptotic formulas of Bessel functions,while the third issue remains unsolved.In this paper,the Bessel functions in the conventional formulation of the theory are replaced by scaled Bessel functions which have good numerical properties for high loss media,and stable formulas are derived.Numerical tests show that this approach can work properly with very high lossy media.Also,this approach can be seamlessly combined with the stable computation method for cases of small argument and large order of Bessel functions.
基金Project supported by the National Key Research and Development Project,China(Grant No.2017YFB0403003)the National Natural Science Foundation of China(Grant Nos.61774081,61322403,and 91850112)+3 种基金the State Key Research and Development Project of Jiangsu Province,China(Grant No.BE2018115)Shenzhen Fundamental Research Project,China(Grant Nos.201773239 and 201888588)the Project of the State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices,China(Grant No.2017KF001)the Fundamental Research Funds for the Central Universities,China(Grant Nos.021014380093 and 021014380085)
文摘We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga_2O_3 interface is realized by tuning the conductivity of amorphous Ga_2O_3 films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga_2O_3 interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity(PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA,a high detectivity of 9.82×10^(12) cm·Hz^(1/2)·W^(-1), a fast response time of 243.9 μs, and a high ultraviolet C(UVC)-toultraviolet A(UVA) rejection ratio of 103. The promoting performance is attributed primarily to the reduction of the subgap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.
基金financially supported by the National Natural Science Foundation of China(No.51972045,5197021414)the Fundamental Research Funds for the Chinese Central Universities,China(No.ZYGX2019J025)+4 种基金Sichuan Science and Technology Program(No.2020JDRC0015 and No.2020JDRC0045)Sichuan Science and Technology Innovation Talent Project(No.2021JDRC0021)the Vice-Chancellor fellowship scheme at RMIT Universitythe RMIT Micro Nano Research Facility(MNRF)in the Victorian node of the Australian National Fabrication Facility(ANFF)the RMIT Microscopy and Microanalysis Facility(RMMF)to support this work。
文摘Developing highly efficient magnetic microwave absorb-ers(MAs)is crucial,and yet challenging for anti-corrosion properties in extremely humid and salt-induced foggy environments.Herein,a dual-oxide shell of ZnO/Al_(2)O_(3) as a robust barrier to FeSiAl core is introduced to mitigate corrosion resistance.The FeSiAl@ZnO@Al_(2)O_(3) layer by layer hybrid structure is realized with atomic-scale precision through the atomic layer deposition technique.Owing to the unique hybrid structure,the FeSiAl@ZnO@Al_(2)O_(3) exhibits record-high micro-wave absorbing performance in low-frequency bands covering L and S bands with a minimum reflection loss(RLmin)of-50.6 dB at 3.4 GHz.Compared with pure FeSiAl(RLmin of-13.5 dB,a bandwidth of 0.5 GHz),the RLmin value and effective bandwidth of this designed novel absorber increased up to~3.7 and~3 times,respectively.Fur-thermore,the inert ceramic dual-shells have improved 9.0 times the anti-corrosion property of FeSiAl core by multistage barriers towards corrosive medium and obstruction of the electric circuit.This is attributed to the large charge transfer resistance,increased impedance modulus|Z|0.01 Hz,and frequency time constant of FeSiAl@ZnO@Al_(2)O_(3).The research demonstrates a promising platform toward the design of next-generation MAs with improved anti-corrosion properties.
基金supported by the National Nature Science Foundation of China (Nos. 51971111, 52273247)the facilities in the Center for Microscopy and Analysis at Nanjing University of Aeronautics and Astronautics and the Fund of Prospective Layout of Scientific Research for NUAA (Nanjing University of Aeronautics and Astronautics (No. ILA220461A22)。
文摘Wearable devices with efficient thermal management and electromagnetic interference(EMI) shielding are highly desirable for improving human comfort and safety. Herein, a multifunctional wearable carbon fibers(CF) @ polyaniline(PANI)/silver nanowires(Ag NWs) composites with a “branch-trunk” interlocked micro/nanostructure were achieved through "three-in-one" multi-scale design. The reasonable assembly of the three kinds of one-dimensional(1D) materials can fully exert their excellent properties i.e., the superior flexibility of CF, the robustness of PANI, and the splendid conductivity of Ag NWs. Consequently, the constructed flexible composite demonstrates enhanced mechanical properties with a tensile stress of 1.2 MPa, which was almost 6 times that of the original material. This is mainly attributed to the fact that the PNAI(branch) was firmly attached to the CF(trunk) through polydopamine(PDA), forming a robust interlocked structure. Meanwhile, the composite possesses excellent thermal insulation and heat preservation capacity owing to the synergistically low thermal conductivity and emissivity. More importantly, the conductive path of the composite established by the three 1D materials greatly improved its EMI shielding property and Joule heating performance at low applied voltage. This work paves the way for rational utilization of the intrinsic properties of 1D materials, as well as provides a promising strategy for designing wearable electromagnetic protection and thermal energy management devices.
基金Supported by the National Key R&D Program of China under Grant No.2016YFB0400902the National Natural Science Foundation of China under Grant No.61921005the Natural Science Foundation of Jiangsu Province under Grant No.BK20190302。
文摘We fabricated 4H-SiC ultraviolet avalanche photodiode(APD)arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs.Based on a statistical correlation study of individual device performance and structural defect mapping revealed by molten KOH etching,it is determined with high confidence level that even a single threading dislocation within APD active region would lead to apparent device performance degradation,including increase of dark current near breakdown voltage,premature breakdown and reduction of single photon detection efficiency at fixed dark count rate.
基金supported by the National Natural Science Foundation of China(Grant No.11304160)the Natural Science Foundation of Jiangsu Provincial Higher Education Institutions,China(Grant No.13KJB140008)the Foundation of Nanjing University of Posts and Telecommunications,China(Grant No.NY213018)
文摘Propagation characteristics of surface acoustic waves（SAWs） in ZnO films/glass substrates are theoretically investigated by the three-dimensional（3D） finite element method. At first, for（11ˉ20） ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the [1ˉ100] direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate h/λ, Rayleigh wave has a maximum k^2 of 2.4% in（90°, 56.5°, 0°） ZnO film/glass substrate structure; Love wave has a maximum k^2 of 3.81% in（56°, 90°, 0°） ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency（TCF） can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k^2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.
基金supported by the National Natural Science Foundation of China(Grant Nos.62074077,61921005,61974062,and 61904082)the China Postdoctoral Science Foundation(Grant No.2020M671441)+1 种基金the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant Nos.19KJB510006 and 19KJB510039)the Natural Science Foundation of Jiangsu Province(Grant No.BK20190765)。
文摘Nonpolar(1120)plane In_(x)Ga_(1-x)N epilayers comprising the entire In content(x)range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties were studied intensively.It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33,even though the crystalline quality was gradually declined,which was accompanied by the appearance of phase separation in the In_(x)Ga_(1-x)N layer.Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for x varied from 0.06 to 0.33.Furthermore,the corresponding average lifetime(τ_(1/e))of carriers for the nonpolar In Ga N film was decreased from 406 ps to 267 ps,indicating that a high-speed modulation bandwidth can be expected for nonpolar In Ga N-based light-emitting diodes.Moreover,the bowing coefficient(b)of the(1120)plane In Ga N was determined to be 1.91 e V for the bandgap energy as a function of x.
基金supported by the University of Electronic Science and Technology of China (Grant No. Y03019023601016208)the National Natural Science Foundation of China (Grant Nos. 21773024, 51372033)National High Technology Research and Development Program of China (Grant No. 2015AA034202)。
文摘In order to realize industrial production of hydrogen through water splitting,it is essential to develop a cost-efficient and scalable approach to synthesize nonprecious electrocatalysts with sufficiently high activity and stability to replace commercial noble-metal-based electrocatalysts.Herein we synthesize cobalt phosphide nanoparticles dispersed within nitrogen-doped carbon nanotube network(CP@NCNT) via scalable spray drying and thermal treatments.As a multifunctional electrocatalyst,the CP@NCNT hybrid delivers outstanding activity for HER(in both acidic and alkaline electrolytes),OER and overall water splitting.Remarkably,it shows an ultra-low overpotental of 94 mV to obtain 10 mA cm-2 in HER.It also demonstrates outstanding activity in overall water splitting,requiring only 1.619 V to deliver 10 mA cm-2with more than 72 h’ long-term stability.The combination of notable performance,multi-functionality and highly scalable spray-drying synthesis method enables this material as a novel and cost-efficient transition metal-based electrocatalysts for overall water splitting.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61522507 and 11404264)
文摘Graphene and other two-dimensional materials have recently emerged as promising candidates for next-generation, high-performance photonics. In this paper, the progress of research into photodetectors and other electro-optical devices based on graphene integrated silicon photonics is briefly reviewed. We discuss the performance metrics, photo-response mechanisms, and experimental results of the latest graphene photodetectors integrated with silicon photonics, We also lay out the unavoidable performance trade-offs in meeting the requirements of various applications. In addition, we describe other opto-electronic devices based on this idea. Integrating two-dimensional materials with a silicon platform provides new opportunities in advanced integrated photonics.
基金Project supported by the National Natural Science Foundation of China(Grant No.61036001)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK2010010)the Fundamental Research Funds for the Central Universities of China(Grant Nos.1112021001 and 1116021003)
文摘SnO2 nanocrystal and rare-earth Eu^3＋ ion co-doped SiO2 thin films are prepared by sol-gel and spin coating methods. The formation of tetragonal rutile structure SnO2 nanocrystals with a uniform distribution is confirmed by X-ray diffraction and transmission electron microscopy. Fourier transform infrared spectroscopy is used to investigate the densities of the hydroxyl groups, and it is found that the emission intensity from the 5Do-TF2 transitions of the Eu^3＋ ions is enhanced by two orders of magnitude due to energy transfer from the oxygen-vacancy-related defects of the SnO2 nanocrystals to nearby Eu^3＋ ions. The influences of the amounts of Sn and the post-annealing temperatures are systematically evaluated to further understand the mechanism of energy transfer. The luminescence intensity ratio of Eu^3＋ ions from electric dipole transition and magnetic dipole transition indicate the different probable locations of Eu^3＋ ions in the sol-gel thin film, which are further discussed based on temperature-dependent photoluminescence measurements.
