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ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate 被引量:4
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作者 GAO Jin-song XU Ying WANG Xiao-yi WANG Tong-tong 《光学精密工程》 EI CAS CSCD 北大核心 2005年第4期397-402,共6页
ITO (indium oxide doped with tin) thin films were deposited on glass substrates by using ITO pellet with a composition of w(In2O3)=90% and w(SnO2)=10% by electron beam evaporated with End-Hall ion source assiste... ITO (indium oxide doped with tin) thin films were deposited on glass substrates by using ITO pellet with a composition of w(In2O3)=90% and w(SnO2)=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail. 展开更多
关键词 ITO 薄膜 电子束 离子源
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