This paper addresses a multicircular circumnavigation control for UAVs with desired angular spacing around a nonstationary target.By defining a coordinated error relative to neighboring angular spacing,under the premi...This paper addresses a multicircular circumnavigation control for UAVs with desired angular spacing around a nonstationary target.By defining a coordinated error relative to neighboring angular spacing,under the premise that target information is perfectly accessible by all nodes,a centralized circular enclosing control strategy is derived for multiple UAVs connected by an undirected graph to allow for formation behaviors concerning the moving target.Besides,to avoid the requirement of target’s states being accessible for each UAV,fixed-time distributed observers are introduced to acquire the state estimates in a fixed-time sense,and the upper boundary of settling time can be determined offline irrespective of initial properties,greatly releasing the burdensome communication traffic.Then,with the aid of fixed-time distributed observers,a distributed circular circumnavigation controller is derived to force all UAVs to collaboratively evolve along the preset circles while keeping a desired angular spacing.It is inferred from Lyapunov stability that all errors are demonstrated to be convergent.Simulations are offered to verify the utility of proposed protocol.展开更多
Most researches associated with target encircling control are focused on moving along a circular orbit under an ideal environment free from external disturbances.However,elliptical encirclement with a time-varying obs...Most researches associated with target encircling control are focused on moving along a circular orbit under an ideal environment free from external disturbances.However,elliptical encirclement with a time-varying observation radius,may permit a more flexible and high-efficacy enclosing solution,whilst the non-orthogonal property between axial and tangential speed components,non-ignorable environmental perturbations,and strict assignment requirements empower elliptical encircling control to be more challenging,and the relevant investigations are still open.Following this line,an appointed-time elliptical encircling control rule capable of reinforcing circumnavigation performances is developed to enable Unmanned Aerial Vehicles(UAVs)to move along a specified elliptical path within a predetermined reaching time.The remarkable merits of the designed strategy are that the relative distance controlling error can be guaranteed to evolve within specified regions with a designer-specified convergence behavior.Meanwhile,wind perturbations can be online counteracted based on an unknown system dynamics estimator(USDE)with only one regulating parameter and high computational efficiency.Lyapunov tool demonstrates that all involved error variables are ultimately limited,and simulations are implemented to confirm the usability of the suggested control algorithm.展开更多
This paper reports the current-voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes （RTDs） as a function of uniaxial external stress applied parallel to the [110] and the [1^-10]...This paper reports the current-voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes （RTDs） as a function of uniaxial external stress applied parallel to the [110] and the [1^-10] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1^-10] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1^-0] stresses and the linear sensitivities are up to 0.69 mV/MPa, -0.69 mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37 mV/kPa.展开更多
We present a novel method for heightening the sensitivity of a prism coupler-based surface plasmon resonance(SPR)sensor.The method is based on the total reflection prism made of BK7 glass combined with the Kretschmann...We present a novel method for heightening the sensitivity of a prism coupler-based surface plasmon resonance(SPR)sensor.The method is based on the total reflection prism made of BK7 glass combined with the Kretschmann geometry of theattenuated total reflection(ATR)method.Compared to the conventional methods of prism coupler-based SPR,the novel method provides higher sensitivity to the measurement system.Theoretical simulations show that the detection sensitivity to the refractive index(RI)of the sensor based on the novel approach has a strong dependence on the thickness of the metal layer.The RI resolution of the sensor is predicted to be 8×10^(-7)refractive index units(RIU)under the condition of optimum metal film thickness.This novel method can leave out a precision angle rotation device in the angle modulation and it is unnecessary to adjust the acceptance angle of the light detector.The principal advantage of this method over other methods of light intensity modulation based on prism coupler-based SPR is high sensitivity,expediency to measure and application of long distances.展开更多
Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene...Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on–off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review,the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed.Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide(TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally,the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.展开更多
This paper discusses the I-V property of the GaAs-based resonant tunnelling structure （RTS） under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose ...This paper discusses the I-V property of the GaAs-based resonant tunnelling structure （RTS） under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke＇s law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the I-V curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.展开更多
Due to the tiny shift in order of optical wavelength for Goos-Hǎnchen （GH） shift, it is very difficult to directly measure and apply the GH shift. We develop a new method for enhancing GH shift of both TE and TM po...Due to the tiny shift in order of optical wavelength for Goos-Hǎnchen （GH） shift, it is very difficult to directly measure and apply the GH shift. We develop a new method for enhancing GH shift of both TE and TM polarized waves. The method is based on a total reflection prism made of BK9 glass combined with a precise measurement of the resulting spatial displacement with a one-dimensional charge coupled device （CCD）. Measurements are performed to examine the validity of the method. Experimental and theoretical results indicate the feasibility of the method with an enhancement in optical wavelenghth shift at millimetre scale. The method is advantageous to application the GH shift in the optical domain, and is also meaningful for measuring even smaller changes in the refractive index of a liquid.展开更多
Pulse laser range detector is to measure the distance by estimating the time delay between the emitting pulse and echo pulse.In this paper,a mathematical model for the target echo signal of laser fuze has been establi...Pulse laser range detector is to measure the distance by estimating the time delay between the emitting pulse and echo pulse.In this paper,a mathematical model for the target echo signal of laser fuze has been established;in accordance with this model,the formulas for echo time-delay estimation and for amplitude estimation based on least squares criterion have been deduced.It is argued and simulated that the resolution of echo time-delay estimation could be improved through multi-reference correlation approach.Experiments illustrate that the approach enables pulsed laser fuze to perform high-precision ranging under a low signal-to-noise ratio condition.展开更多
Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phas...Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phase epitaxy （MOVPE） grown CuGaSe2 layer is investigated in a temperature range from 20 to 300 K to compare these two techniques. Both PL and PR spectra appear red shifted, less intense and broadened. The temperature dependence of interband transitions is studied by using the Manoogian Leclerc equation. The values of the band gap energy at T=0K and the effective phonon temperature are estimated. The temperature dependences of intensities and broadenings of PL and PR spectral lines are also analysed. Based on the results of the comparison, the features and applications of the PL and PR can be shown in detail.展开更多
Hexagonal GaN epilayer grown on sapphire substrate by metal organic chemical vapour deposition （MOCVD） is studied using Raman scattering and photoluminescence in a temperature range from 100K to 873 K. The model of ...Hexagonal GaN epilayer grown on sapphire substrate by metal organic chemical vapour deposition （MOCVD） is studied using Raman scattering and photoluminescence in a temperature range from 100K to 873 K. The model of strain （stress） induced by the different lattice parameters and thermal coefficients of epilayer and substrate as a function of temperature is set up. The frequency and the linewidth of E2^high mode in a GaN layer are modelled by a theory with considering the thermal expansion of the lattice, a symmetric decay of the optical phonons, and the strain （stress） in the layer. The temperature-dependent energy shift of free exeiton A is determined by using Varshni empirical relation, and the effect of strain （stress） is also investigated. We find that the strain in the film leads to a decreasing shift of the phonon frequency and an about 10meV-inereasing shift of the energy in a temperature range from 100 K to 823 K.展开更多
The authors withdraw the research paper“High-Efficiency Graphene Photo Sensor Using a Transparent Electrode”,which was published in Chinese Physics Letters 28(10),107301(2011),due to the major mistakes in management...The authors withdraw the research paper“High-Efficiency Graphene Photo Sensor Using a Transparent Electrode”,which was published in Chinese Physics Letters 28(10),107301(2011),due to the major mistakes in management and experiment,which led to the authors adopting inappropriate data published without sufficient examination and permission processes.展开更多
We report the first implementation of transparent electrodes in bottom-gate graphene transistors used for photo detection.Compared to conventional nontransparent electrodes,the transparent electrodes allow photons to ...We report the first implementation of transparent electrodes in bottom-gate graphene transistors used for photo detection.Compared to conventional nontransparent electrodes,the transparent electrodes allow photons to transmit through to the graphene beneath,providing an enlarged absorption area and thereby giving rise to an enhancement of photocurrent generation.The devices are fabricated with an asymmetric metallization scheme and the experimental results show that the maximum photocurrent density using the transparent electrodes(ITO and Pd/ITO)is over two times higher than that using the nontransparent electrodes(Ti and Pd),indicating a significant enhancement in the performance of graphene photo sensors.展开更多
With the help of a set of exact closed-form solutions to the stationary Gross–Pitaevskii （GP） equation, we calculate the collective excitation and quantum depletion of a weakly interacting Bose gas in the presence ...With the help of a set of exact closed-form solutions to the stationary Gross–Pitaevskii （GP） equation, we calculate the collective excitation and quantum depletion of a weakly interacting Bose gas in the presence of a periodic array of quantum wells. The excitation spectrum （Bogoliubov spectrum） is obtained from the solution of the linearized time-dependent GP equation, which develops energy bands hωj（ p） periodic in quasi-momentum space. Moreover, we calculate the excitation strengths Zj（ p） relative to the density operator and then the dynamic structure factor S（ p,ω）. Accordingly, the analytical expressions of quantum depletion of the system are obtained. We find that the quantum depletion is enhanced when the interatomic interactions become larger and the potential is sufficiently deep. The conditions for the possible experimental realization of our scenario are also proposed.展开更多
Channel hot-electron （HE） energy in short-channel metal-oxide-semiconductor field-effect transistors （MOS-FETs） is estimated based on electrical characterization. The HE assisted gate leakage is monitored, and its...Channel hot-electron （HE） energy in short-channel metal-oxide-semiconductor field-effect transistors （MOS-FETs） is estimated based on electrical characterization. The HE assisted gate leakage is monitored, and its energy dependent tunnelling probability is calculated, from which the excess energy of HE is estimated. The credibility of the proposed method is supported by the experimental and theoretical results, and its accuracy in ultra-small-feature-size device application is also discussed.展开更多
Physical and chemical properties of titanium oxynitride （TiOxNy ） formed by low-temperature oxidation of titanium nitride （TIN） layer are investigated for advanced metal-oxide-semiconductor （MOS） gate dielectric...Physical and chemical properties of titanium oxynitride （TiOxNy ） formed by low-temperature oxidation of titanium nitride （TIN） layer are investigated for advanced metal-oxide-semiconductor （MOS） gate dielectric application. TiOxNy exhibits polycrystalline properties after the standard thermal process for MOS device fabrication, showing the preferred orientation at [200]. Superior electrical properties of TiOxNy can be maintained before and after the annealing, probably due to the nitrogen incorporation in the oxide bulk and at the interface. Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.展开更多
Deep-trap properties of high-dielectric-constant （k） HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type...Deep-trap properties of high-dielectric-constant （k） HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5eV, 1.8 ×10^-16 cm^2 and 1.0 × 10^16 cm^-3, respectively.展开更多
基金supported in part by the National Natural Science Foundation of China under Grant Nos.62173312,61922037,61873115,and 61803348in part by the National Major Scientific Instruments Development Project under Grant 61927807+6 种基金in part by the State Key Laboratory of Deep Buried Target Damage under Grant No.DXMBJJ2019-02in part by the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi under Grant 2020L0266in part by the Shanxi Province Science Foundation for Youths under Grant No.201701D221123in part by the Youth Academic North University of China under Grant No.QX201803in part by the Program for the Innovative Talents of Higher Education Institutions of Shanxiin part by the Shanxi“1331Project”Key Subjects Construction under Grant 1331KSCin part by the Supported by Shanxi Province Science Foundation for Excellent Youths。
文摘This paper addresses a multicircular circumnavigation control for UAVs with desired angular spacing around a nonstationary target.By defining a coordinated error relative to neighboring angular spacing,under the premise that target information is perfectly accessible by all nodes,a centralized circular enclosing control strategy is derived for multiple UAVs connected by an undirected graph to allow for formation behaviors concerning the moving target.Besides,to avoid the requirement of target’s states being accessible for each UAV,fixed-time distributed observers are introduced to acquire the state estimates in a fixed-time sense,and the upper boundary of settling time can be determined offline irrespective of initial properties,greatly releasing the burdensome communication traffic.Then,with the aid of fixed-time distributed observers,a distributed circular circumnavigation controller is derived to force all UAVs to collaboratively evolve along the preset circles while keeping a desired angular spacing.It is inferred from Lyapunov stability that all errors are demonstrated to be convergent.Simulations are offered to verify the utility of proposed protocol.
基金National Natural Science Foundation of China(Grant Nos.61803348,62173312,51922009)Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement(Grant No.201905D121001).
文摘Most researches associated with target encircling control are focused on moving along a circular orbit under an ideal environment free from external disturbances.However,elliptical encirclement with a time-varying observation radius,may permit a more flexible and high-efficacy enclosing solution,whilst the non-orthogonal property between axial and tangential speed components,non-ignorable environmental perturbations,and strict assignment requirements empower elliptical encircling control to be more challenging,and the relevant investigations are still open.Following this line,an appointed-time elliptical encircling control rule capable of reinforcing circumnavigation performances is developed to enable Unmanned Aerial Vehicles(UAVs)to move along a specified elliptical path within a predetermined reaching time.The remarkable merits of the designed strategy are that the relative distance controlling error can be guaranteed to evolve within specified regions with a designer-specified convergence behavior.Meanwhile,wind perturbations can be online counteracted based on an unknown system dynamics estimator(USDE)with only one regulating parameter and high computational efficiency.Lyapunov tool demonstrates that all involved error variables are ultimately limited,and simulations are implemented to confirm the usability of the suggested control algorithm.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 50405025 and 50375050）.
文摘This paper reports the current-voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes （RTDs） as a function of uniaxial external stress applied parallel to the [110] and the [1^-10] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1^-10] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1^-0] stresses and the linear sensitivities are up to 0.69 mV/MPa, -0.69 mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37 mV/kPa.
基金Supported by the Science Foundation of North University of China(No 200905)the Natural Science Foundation of Shanxi Education Department(No 20100509zx).
文摘We present a novel method for heightening the sensitivity of a prism coupler-based surface plasmon resonance(SPR)sensor.The method is based on the total reflection prism made of BK7 glass combined with the Kretschmann geometry of theattenuated total reflection(ATR)method.Compared to the conventional methods of prism coupler-based SPR,the novel method provides higher sensitivity to the measurement system.Theoretical simulations show that the detection sensitivity to the refractive index(RI)of the sensor based on the novel approach has a strong dependence on the thickness of the metal layer.The RI resolution of the sensor is predicted to be 8×10^(-7)refractive index units(RIU)under the condition of optimum metal film thickness.This novel method can leave out a precision angle rotation device in the angle modulation and it is unnecessary to adjust the acceptance angle of the light detector.The principal advantage of this method over other methods of light intensity modulation based on prism coupler-based SPR is high sensitivity,expediency to measure and application of long distances.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61771467)Shanxi Scholarship Council of China (Grant No. 2020-112)+1 种基金Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi, China (Grant Nos. 2020L0268 and 2020L0307)Science Foundation of North University of China (Grant No. XJJ201915)。
文摘Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on–off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review,the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed.Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide(TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally,the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 50775209 and 50730009)
文摘This paper discusses the I-V property of the GaAs-based resonant tunnelling structure （RTS） under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke＇s law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the I-V curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.
基金Supported by the National Natural Science Foundation of China under Grant No 60776062, the Natural Science Foundation of Shanxi Province under Grant No 206011010, and the Youth Foundation of North University of China under Grant No 200605.
文摘Due to the tiny shift in order of optical wavelength for Goos-Hǎnchen （GH） shift, it is very difficult to directly measure and apply the GH shift. We develop a new method for enhancing GH shift of both TE and TM polarized waves. The method is based on a total reflection prism made of BK9 glass combined with a precise measurement of the resulting spatial displacement with a one-dimensional charge coupled device （CCD）. Measurements are performed to examine the validity of the method. Experimental and theoretical results indicate the feasibility of the method with an enhancement in optical wavelenghth shift at millimetre scale. The method is advantageous to application the GH shift in the optical domain, and is also meaningful for measuring even smaller changes in the refractive index of a liquid.
基金Sponsored by the National Defense Science and Technology Laboratory Foundation (9140C3601130802)
文摘Pulse laser range detector is to measure the distance by estimating the time delay between the emitting pulse and echo pulse.In this paper,a mathematical model for the target echo signal of laser fuze has been established;in accordance with this model,the formulas for echo time-delay estimation and for amplitude estimation based on least squares criterion have been deduced.It is argued and simulated that the resolution of echo time-delay estimation could be improved through multi-reference correlation approach.Experiments illustrate that the approach enables pulsed laser fuze to perform high-precision ranging under a low signal-to-noise ratio condition.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50405025 and 50535030)the Program for New Century Excellent Talents in University
文摘Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phase epitaxy （MOVPE） grown CuGaSe2 layer is investigated in a temperature range from 20 to 300 K to compare these two techniques. Both PL and PR spectra appear red shifted, less intense and broadened. The temperature dependence of interband transitions is studied by using the Manoogian Leclerc equation. The values of the band gap energy at T=0K and the effective phonon temperature are estimated. The temperature dependences of intensities and broadenings of PL and PR spectral lines are also analysed. Based on the results of the comparison, the features and applications of the PL and PR can be shown in detail.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50405025 and 50535030)Program for New Century Excellent Talents in University, China
文摘Hexagonal GaN epilayer grown on sapphire substrate by metal organic chemical vapour deposition （MOCVD） is studied using Raman scattering and photoluminescence in a temperature range from 100K to 873 K. The model of strain （stress） induced by the different lattice parameters and thermal coefficients of epilayer and substrate as a function of temperature is set up. The frequency and the linewidth of E2^high mode in a GaN layer are modelled by a theory with considering the thermal expansion of the lattice, a symmetric decay of the optical phonons, and the strain （stress） in the layer. The temperature-dependent energy shift of free exeiton A is determined by using Varshni empirical relation, and the effect of strain （stress） is also investigated. We find that the strain in the film leads to a decreasing shift of the phonon frequency and an about 10meV-inereasing shift of the energy in a temperature range from 100 K to 823 K.
文摘The authors withdraw the research paper“High-Efficiency Graphene Photo Sensor Using a Transparent Electrode”,which was published in Chinese Physics Letters 28(10),107301(2011),due to the major mistakes in management and experiment,which led to the authors adopting inappropriate data published without sufficient examination and permission processes.
文摘We report the first implementation of transparent electrodes in bottom-gate graphene transistors used for photo detection.Compared to conventional nontransparent electrodes,the transparent electrodes allow photons to transmit through to the graphene beneath,providing an enlarged absorption area and thereby giving rise to an enhancement of photocurrent generation.The devices are fabricated with an asymmetric metallization scheme and the experimental results show that the maximum photocurrent density using the transparent electrodes(ITO and Pd/ITO)is over two times higher than that using the nontransparent electrodes(Ti and Pd),indicating a significant enhancement in the performance of graphene photo sensors.
基金Supported by the International Science and Technology Cooperation Program of China under Grant Nos 2013DFR10150 and 2012DFA10680, the National Natural Science Foundation of China under Grant Nos 61127015, 11004200 and 11274315, and the International Science and Technology Cooperation Program of Shanxi under Grant No 2012081029.
文摘With the help of a set of exact closed-form solutions to the stationary Gross–Pitaevskii （GP） equation, we calculate the collective excitation and quantum depletion of a weakly interacting Bose gas in the presence of a periodic array of quantum wells. The excitation spectrum （Bogoliubov spectrum） is obtained from the solution of the linearized time-dependent GP equation, which develops energy bands hωj（ p） periodic in quasi-momentum space. Moreover, we calculate the excitation strengths Zj（ p） relative to the density operator and then the dynamic structure factor S（ p,ω）. Accordingly, the analytical expressions of quantum depletion of the system are obtained. We find that the quantum depletion is enhanced when the interatomic interactions become larger and the potential is sufficiently deep. The conditions for the possible experimental realization of our scenario are also proposed.
基金Supported by the Key Project of the National Natural Science Foundation of China under Grant No 60532080, and the Natural Science Foundation of Shanxi Province under Grant No 2007012003.
文摘Channel hot-electron （HE） energy in short-channel metal-oxide-semiconductor field-effect transistors （MOS-FETs） is estimated based on electrical characterization. The HE assisted gate leakage is monitored, and its energy dependent tunnelling probability is calculated, from which the excess energy of HE is estimated. The credibility of the proposed method is supported by the experimental and theoretical results, and its accuracy in ultra-small-feature-size device application is also discussed.
文摘Physical and chemical properties of titanium oxynitride （TiOxNy ） formed by low-temperature oxidation of titanium nitride （TIN） layer are investigated for advanced metal-oxide-semiconductor （MOS） gate dielectric application. TiOxNy exhibits polycrystalline properties after the standard thermal process for MOS device fabrication, showing the preferred orientation at [200]. Superior electrical properties of TiOxNy can be maintained before and after the annealing, probably due to the nitrogen incorporation in the oxide bulk and at the interface. Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.
文摘Deep-trap properties of high-dielectric-constant （k） HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5eV, 1.8 ×10^-16 cm^2 and 1.0 × 10^16 cm^-3, respectively.
