The increasing demand for hydrogen energy to address environmental issues and achieve carbon neutrality has elevated interest in green hydrogen production,which does not rely on fossil fuels.Among various hydrogen pro...The increasing demand for hydrogen energy to address environmental issues and achieve carbon neutrality has elevated interest in green hydrogen production,which does not rely on fossil fuels.Among various hydrogen production technologies,anion exchange membrane water electrolyzer(AEMWE)has emerged as a next-generation technology known for its high hydrogen production efficiency and its ability to use non-metal catalysts.However,this technology faces significant challenges,particularly in terms of the membrane durability and low ionic conductivity.To address these challenges,research efforts have focused on developing membranes with a new backbone structure and anion exchange groups to enhance durability and ionic conductivity.Notably,the super-acid-catalyzed condensation(SACC)synthesis method stands out due to its user convenience,the ability to create high molecular weight(MW)polymers,and the use of oxygen-tolerant organic catalysts.Although the synthesis of anion exchange membranes(AEMs)using the SACC method began in 2015,and despite growing interest in this synthesis approach,there remains a scarcity of review papers focusing on AEMs synthesized using the SACC method.The review covers the basics of SACC synthesis,presents various polymers synthesized using this method,and summarizes the development of these polymers,particularly their building blocks including aryl,ketone,and anion exchange groups.We systematically describe the effects of changes in the molecular structure of each polymer component,conducted by various research groups,on the mechanical properties,conductivity,and operational stability of the membrane.This review will provide insights into the development of AEMs with superior performance and operational stability suitable for water electrolysis applications.展开更多
In this study,plasma density measurements were performed near the plume region of the remote plasma source (RPS) in Ar/NF3 gas mixtures using a microwave cutoff probe.The measured plasma density is in the range of 101...In this study,plasma density measurements were performed near the plume region of the remote plasma source (RPS) in Ar/NF3 gas mixtures using a microwave cutoff probe.The measured plasma density is in the range of 1010-1011 cm-3 in the discharge conditions with RPS powers of 2-4 kW and gas pressures of 0.87-4 Torr.The plasma density decreased with increasing gas pressures and RPS powers under various Ar/NF3 mixing ratios.This decrease in the plasma density measured at the fixed measurement position (plume region) can be understood by the reduction of the electron energy relaxation length with increases in the gas pressures and mixing ratio of NF3/(Ar/NF3).We also performed downstream etching of silicon and silicon oxide films in this system.The etch rate of the silicon films significantly increases while the silicon oxide is slightly etched with the gas pressures and powers.It was also found that the etch rate strongly depends on the wafer position on the processing chamber electrode,and that the etch selectivity reached 96-131 in the discharge conditions of RF powers (3730-4180 W) and gas pressures (3.6-4 Torr).展开更多
Despite the fact that a radio frequency (RF) shielding box affects a coil inductance used in matching network,RF engineers have used a coil inductance measured in open space on designing matching networks since it is ...Despite the fact that a radio frequency (RF) shielding box affects a coil inductance used in matching network,RF engineers have used a coil inductance measured in open space on designing matching networks since it is difficult to precisely measure the coil inductance within the RF shielding box.In this work,we investigate the influences of the RF shielding box on the coil inductance via a 3D full electromagnetic wave simulation.Simulation results shows that the coil inductance decreases from-6.0% to-11.9% compared with its ideal inductance depending on coil positions within the RF shielding box.Both inductive and capacitive coupling between the coil and surfaces of the RF shielding box contribute to the reduction of the coil inductance.We expect that these results would be useful for those who design RF matching networks.展开更多
Two-dimensional(2D)transition metal chalcogenides(TMC)and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices,particularly futuristic memristive and synapti...Two-dimensional(2D)transition metal chalcogenides(TMC)and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices,particularly futuristic memristive and synaptic devices for brain-inspired neuromorphic computing systems.The distinct properties such as high durability,electrical and optical tunability,clean surface,flexibility,and LEGO-staking capability enable simple fabrication with high integration density,energy-efficient operation,and high scalability.This review provides a thorough examination of high-performance memristors based on 2D TMCs for neuromorphic computing applications,including the promise of 2D TMC materials and heterostructures,as well as the state-of-the-art demonstration of memristive devices.The challenges and future prospects for the development of these emerging materials and devices are also discussed.The purpose of this review is to provide an outlook on the fabrication and characterization of neuromorphic memristors based on 2D TMCs.展开更多
The original version of this article,unfortunately,contained some mistakes and unintentional wrong description of Fig.6 and the caption of Figs.9,10.The correct version of Fig.6 is below.The mentioned figure name for ...The original version of this article,unfortunately,contained some mistakes and unintentional wrong description of Fig.6 and the caption of Figs.9,10.The correct version of Fig.6 is below.The mentioned figure name for the Fig.6 on the manuscript should be updated.In 2D vdW synaptic devices,the length of the tunneling barrier can be increased or decreased on the trapped or detrapped electrons.Kumar et al.reported memristive and neuromorphic devices composed of vertically grown WS2 layer and ZnO(Fig.6e)[149].The interlayer separation between WS2 and ZnO layers serves as an effective porous medium allowing the ZnO to grow with defects.The interfacial region of ZnO,the very contiguous to WS2 layer.展开更多
基金supported by the KRISS(Korea Research Institute of Standards and Science)MPI Lab.program。
文摘The increasing demand for hydrogen energy to address environmental issues and achieve carbon neutrality has elevated interest in green hydrogen production,which does not rely on fossil fuels.Among various hydrogen production technologies,anion exchange membrane water electrolyzer(AEMWE)has emerged as a next-generation technology known for its high hydrogen production efficiency and its ability to use non-metal catalysts.However,this technology faces significant challenges,particularly in terms of the membrane durability and low ionic conductivity.To address these challenges,research efforts have focused on developing membranes with a new backbone structure and anion exchange groups to enhance durability and ionic conductivity.Notably,the super-acid-catalyzed condensation(SACC)synthesis method stands out due to its user convenience,the ability to create high molecular weight(MW)polymers,and the use of oxygen-tolerant organic catalysts.Although the synthesis of anion exchange membranes(AEMs)using the SACC method began in 2015,and despite growing interest in this synthesis approach,there remains a scarcity of review papers focusing on AEMs synthesized using the SACC method.The review covers the basics of SACC synthesis,presents various polymers synthesized using this method,and summarizes the development of these polymers,particularly their building blocks including aryl,ketone,and anion exchange groups.We systematically describe the effects of changes in the molecular structure of each polymer component,conducted by various research groups,on the mechanical properties,conductivity,and operational stability of the membrane.This review will provide insights into the development of AEMs with superior performance and operational stability suitable for water electrolysis applications.
文摘In this study,plasma density measurements were performed near the plume region of the remote plasma source (RPS) in Ar/NF3 gas mixtures using a microwave cutoff probe.The measured plasma density is in the range of 1010-1011 cm-3 in the discharge conditions with RPS powers of 2-4 kW and gas pressures of 0.87-4 Torr.The plasma density decreased with increasing gas pressures and RPS powers under various Ar/NF3 mixing ratios.This decrease in the plasma density measured at the fixed measurement position (plume region) can be understood by the reduction of the electron energy relaxation length with increases in the gas pressures and mixing ratio of NF3/(Ar/NF3).We also performed downstream etching of silicon and silicon oxide films in this system.The etch rate of the silicon films significantly increases while the silicon oxide is slightly etched with the gas pressures and powers.It was also found that the etch rate strongly depends on the wafer position on the processing chamber electrode,and that the etch selectivity reached 96-131 in the discharge conditions of RF powers (3730-4180 W) and gas pressures (3.6-4 Torr).
文摘Despite the fact that a radio frequency (RF) shielding box affects a coil inductance used in matching network,RF engineers have used a coil inductance measured in open space on designing matching networks since it is difficult to precisely measure the coil inductance within the RF shielding box.In this work,we investigate the influences of the RF shielding box on the coil inductance via a 3D full electromagnetic wave simulation.Simulation results shows that the coil inductance decreases from-6.0% to-11.9% compared with its ideal inductance depending on coil positions within the RF shielding box.Both inductive and capacitive coupling between the coil and surfaces of the RF shielding box contribute to the reduction of the coil inductance.We expect that these results would be useful for those who design RF matching networks.
基金supported by the Characterization platform for advanced materials funded by the Korea Research Institute of Standards and Science(KRISS-2021-GP2021-0011)supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government MSIT(2021M3D1A20396541).
文摘Two-dimensional(2D)transition metal chalcogenides(TMC)and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices,particularly futuristic memristive and synaptic devices for brain-inspired neuromorphic computing systems.The distinct properties such as high durability,electrical and optical tunability,clean surface,flexibility,and LEGO-staking capability enable simple fabrication with high integration density,energy-efficient operation,and high scalability.This review provides a thorough examination of high-performance memristors based on 2D TMCs for neuromorphic computing applications,including the promise of 2D TMC materials and heterostructures,as well as the state-of-the-art demonstration of memristive devices.The challenges and future prospects for the development of these emerging materials and devices are also discussed.The purpose of this review is to provide an outlook on the fabrication and characterization of neuromorphic memristors based on 2D TMCs.
文摘The original version of this article,unfortunately,contained some mistakes and unintentional wrong description of Fig.6 and the caption of Figs.9,10.The correct version of Fig.6 is below.The mentioned figure name for the Fig.6 on the manuscript should be updated.In 2D vdW synaptic devices,the length of the tunneling barrier can be increased or decreased on the trapped or detrapped electrons.Kumar et al.reported memristive and neuromorphic devices composed of vertically grown WS2 layer and ZnO(Fig.6e)[149].The interlayer separation between WS2 and ZnO layers serves as an effective porous medium allowing the ZnO to grow with defects.The interfacial region of ZnO,the very contiguous to WS2 layer.
