The relative changes of thermal diffusivity lengths in ionimplanted and unirnplanted silicon wafers were studied,with "mirage effecct",i,e,OBD techique.The fundamental principle,experimental results and feas...The relative changes of thermal diffusivity lengths in ionimplanted and unirnplanted silicon wafers were studied,with "mirage effecct",i,e,OBD techique.The fundamental principle,experimental results and feasible explanation are presented.展开更多
基金supported by the Science Fund of the Chinese Academy of Sciences。
文摘The relative changes of thermal diffusivity lengths in ionimplanted and unirnplanted silicon wafers were studied,with "mirage effecct",i,e,OBD techique.The fundamental principle,experimental results and feasible explanation are presented.
