The spatial distributions of different kinds of ions are usually not completely the same in the process of extracting.In order to study the reason for the different characteristics of ion extraction, a simplified simu...The spatial distributions of different kinds of ions are usually not completely the same in the process of extracting.In order to study the reason for the different characteristics of ion extraction, a simplified simulation model of Cu+ andCr+ ions extraction process was established by 2D3V (two-dimensional in space and three- dimensional in velocity space)particle-in-cell (PIC) method. The effects of different extraction voltages from 0 V to 500 V on the density distribution ofCu+ and Cr+ ions and the change of plasma emission surface were analyzed. On the basis of this model, the ion densitydistribution characteristics of Cu+ ions mixed with Li+, Mg+, K+, Fe+, Y+, Ag+, Xe+, Au+, and Pb+ ions respectivelyunder 200-V extraction voltage are further simulated, and it is revealed that the atomic mass of the ions is the key reason fordifferent ion density distributions when different kinds of ions are mixed and extracted, which provides support for furtherunderstanding of ion extraction characteristics.展开更多
The characteristics of the extracted ion current have a significant impact on the design and testing of ion source performance.In this paper,a 2D in space and 3D in velocity space particle in cell(2D3V PIC)method is u...The characteristics of the extracted ion current have a significant impact on the design and testing of ion source performance.In this paper,a 2D in space and 3D in velocity space particle in cell(2D3V PIC)method is utilized to simulate plasma motion and ion extraction characteristics under various initial plasma velocity distributions and extraction voltages in a Cartesian coordinate system.The plasma density is of the order of 10^(15)m^(-3)-10^(16)m^(-3)and the extraction voltage is of the order of 100 V-1000 V.The study investigates the impact of various extraction voltages on the velocity and density distributions of electrons and positive ions,and analyzes the influence of different initial plasma velocity distributions on the extraction current.The simulation results reveal that the main reason for the variation of extraction current is the spacecharge force formed by the relative aggregation of positive and negative net charges.This lays the foundation for a deeper understanding of extraction beam characteristics.展开更多
The effects of Ga N/In Ga N asymmetric lower waveguide(LWG)layers on photoelectrical properties of In Ga N multiple quantum well laser diodes(LDs)with an emission wavelength of around 416 nm are theoretically investig...The effects of Ga N/In Ga N asymmetric lower waveguide(LWG)layers on photoelectrical properties of In Ga N multiple quantum well laser diodes(LDs)with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of In Ga N insertion layer(In Ga N-IL)between the Ga N lower waveguide layer and the quantum wells,which is achieved with the Crosslight Device Simulation Software(PIC3D,Crosslight Software Inc.).The optimal thickness and the indium content of the In Ga N-IL in lower waveguide layers are found to be 300 nm and 4%,respectively.The thickness of In Ga N-IL predominantly affects the output power and the optical field distribution in comparison with the indium content,and the highest output power is achieved to be 1.25 times that of the reference structure(symmetric Ga N waveguide),which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells.Furthermore,when the thickness and indium content of In Ga N-IL both reach a higher level,the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor(OCF)related to the concentrated optical field in the lower waveguide.展开更多
An room temperature low noise anti-parallel Schottky diode based 630-720 GHz sub-harmonic mixer(SHM) is designed, built and measured. Intrinsic resonances in lowpass hammer-head filter have been adopted to prevent the...An room temperature low noise anti-parallel Schottky diode based 630-720 GHz sub-harmonic mixer(SHM) is designed, built and measured. Intrinsic resonances in lowpass hammer-head filter have been adopted to prevent the LO and RF power leak from the IF channel, while greatly minimizing the transmission line size. The mixer consists of 15 um quartz terahertz circuit and 127 um Al2 O3 IF transformer circuit. An improved lumped element equivalent noise model of SBDs guarantees the accuracy of simulation. The measurement indicates that with local oscillating(LO)signal of 2-8 mW, the lowest double sideband(DSB) conversion loss is 8.2 dB at 645 GHz,and the best DSB noise temperature is 2800 K at 657 GHz. The 3 dB bandwidth of conversion loss is 75 GHz from 638 to 715 GHz. The work IF frequency band is above 20 GHz ranging from 1 to 20 GHz with-10 dB return loss.展开更多
Parameters of hydrogen plasma in a miniature Penning discharge ion source, including the electron temperature and the electron density, were measured by using double probes. The results indicate that the electron dens...Parameters of hydrogen plasma in a miniature Penning discharge ion source, including the electron temperature and the electron density, were measured by using double probes. The results indicate that the electron density increases and the electron temperature decreases with the increase in gas pressure and the discharge current. The electron temperature is about 5 - 9 eV and the electron density is 6.0× 10^13 ～ 1.2 × 10^14 m^-3 while the discharge current is in a range of 50 - 120 μA.展开更多
In electrical devices poured by epoxy resin, there are a lot of interfaces between epoxy resin and other solid dielectrics, i.e. solid-solid interfaces. Experiments were carried out to study the flashover characterist...In electrical devices poured by epoxy resin, there are a lot of interfaces between epoxy resin and other solid dielectrics, i.e. solid-solid interfaces. Experiments were carried out to study the flashover characteristics of two typical solid-solid interfaces （epoxy-ceramic and epoxy~ PMMA） under steep high-voltage impulse for different electrode systems （coaxial electrodes and finger electrodes） and different types of epoxy resin （neat epoxy resin, polyether modified epoxy resin and polyurethane modified epoxy resin）. Results showed that, the flashover of solid-solid interface is similar to the breakdown of solid dielectric, and there are unrecoverable carbonated tracks after flashover. Under the same distance of electrodes, the electric stress of coaxial electrodes is lower than that of finger electrodes; and after the flashover, there are more severe breakdown and larger enhanced surface conductivity at interface for coaxial electrodes, as compared with the case of finger electrode. The dielectric properties are also discussed.展开更多
Vacuum arc ion sources are known for delivering high currents of ion beams in many technological applications. There is a great need in the present ion accelerator injection research for a titanium vacuum arc source t...Vacuum arc ion sources are known for delivering high currents of ion beams in many technological applications. There is a great need in the present ion accelerator injection research for a titanium vacuum arc source to produce high-ionized plasma, in which its parameter is extremely important to match the extractors geometry and the extraction voltage. In this paper, the radial and angular distributions of the titanium cathodic vacuum arc plasma parameters are measured by a cylindrical Langmuir probe and analyzed by the Druyvesteyn method from the I-V curves. The electron density ne is about 10^（17）m^（-3） and the effective electron temperature Tefr is in the range of 6.12-11.11 eV in the free expansion cup before the ion extraction. The measured distribution of ne over the expansion cross-section is non-uniform and axially unsymmetrical with its form similar to the Gaussian distribution, and most of the plasma is concentrated into an area whose radius is smaller than 5 mm. Teff has a nearly uniform distribution over the expansion cross-section during the discharge. The results of the plasma parameters＇ non-uniformity encourage the researchers to make some optimization designs to improve the parameter distributions, and then to facilitate ion extraction.展开更多
In terahertz communication,the direct frequency conversion structure in which orthogonal mixer is the main frequency conversion unit,makes engineers get into trouble of in-phase(I)branch and quadrature(Q)branch imbala...In terahertz communication,the direct frequency conversion structure in which orthogonal mixer is the main frequency conversion unit,makes engineers get into trouble of in-phase(I)branch and quadrature(Q)branch imbalance,carrier wave leakage,etc.These damages result in system performance tremendous degrades.We proposed a semiblind method to estimate the I/Q imbalance of THz orthogonal modulator,based on predefined preamble and pilot symbols for quadrature amplitude modulation(QAM).In this paper,a transmitter with Y band quadrature mixer and 20Gbps base-band signal has been tested.The bandwidth of the baseband signal was 7GHz,and the modulation type was 16QAM.By this method,7dB improvement of the system’s symbol Mean Square Error(MSE)has been got.That means the proposed method can be used to eliminate the I/Q imbalance effectively.展开更多
A semi-empirical equation of state model for aluminum in a warm dense matter regime is constructed. The equation of state, which is subdivided into a cold term, thermal contributions of ions and electrons, covers a br...A semi-empirical equation of state model for aluminum in a warm dense matter regime is constructed. The equation of state, which is subdivided into a cold term, thermal contributions of ions and electrons, covers a broad range of phase diagram from solid state to plasma state. The cold term and thermal contribution of ions are from the Bushman–Lomonosov model, in which several undetermined parameters are fitted based on equation of state theories and specific experimental data. The Thomas–Fermi–Kirzhnits model is employed to estimate the thermal contribution of electrons. Some practical modifications are introduced to the Thomas–Fermi–Kirzhnits model to improve the prediction of the equation of state model. Theoretical calculation of thermodynamic parameters, including phase diagram, curves of isothermal compression at ambient temperature, melting, and Hugoniot, are analyzed and compared with relevant experimental data and other theoretical evaluations.展开更多
An air-spark switch plasma was diagnosed by the Mach–Zehnder laser interferometer with ultra-high spatial and temporal resolution. The interferograms containing plasma phase shift information at different time were o...An air-spark switch plasma was diagnosed by the Mach–Zehnder laser interferometer with ultra-high spatial and temporal resolution. The interferograms containing plasma phase shift information at different time were obtained. The phase shift distributions of the plasma were extracted by numerically processing the interferograms. The three-dimensional(3 D) electron density distributions of the air-spark switch plasma were then obtained. The working process of the air-spark switch was described by analyzing the temporal and spatial evolution of the plasma electron density.展开更多
Gas spark gap is widely used in any pulsed power system as the key element which directly determines its repetitive performance and output characteristics. Among many factors of threeelectrode gas spark gap, backgroun...Gas spark gap is widely used in any pulsed power system as the key element which directly determines its repetitive performance and output characteristics. Among many factors of threeelectrode gas spark gap, background pressure is of much importance in determining the gap performance parameters such as the delay and jitter, and relevant studies have been rarely performed. A magneto-hydrodynamic model of the arc in gas spark gap is built and the effects of background pressure on the arc characteristics are discussed in this paper. It is demonstrated that a higher background pressure may result in radial compression of the arc column, a higher arc voltage, and a lower declination rate of arc resistance in the first quarter cycle. Relevant simulation data would be helpful for the optimization of the design of gas spark gap.展开更多
A series of solid-solid interfaces, consisting of ceramic-epoxy resin interface samples with a tip-plate electrode, were investigated by performing partial discharge tests and realtime electrical tree observations. A ...A series of solid-solid interfaces, consisting of ceramic-epoxy resin interface samples with a tip-plate electrode, were investigated by performing partial discharge tests and realtime electrical tree observations. A toughening agent was added to the epoxy resin at different ratios for comparison. The impact strength, differential scanning calorimetry （DSC） and dielectric properties of the cured compositions and ceramic were tested. The electric field strength at the tip was calculated based on Maxwell＇s theory. The test results show that the addition of a toughener can improve the impact strength of epoxy resin but it decreases the partial discharge inception voltage （PDIV） of the interface sample. At the same time, toughening leads to complex branches of the electrical tree. The simulation result suggests that this reduction of the PDIV cannot be explained by a change of permittivity due to the addition of a toughening agent. The microstructural change caused by toughening was considered to be the key factor for lower PDIV and complex electrical tree branches.展开更多
As the development of radar systems developed for the terahertz and higher millimeter region continues to grow, the interest in the water surface and land clutter at terahertz and higher millimeter frequencies continu...As the development of radar systems developed for the terahertz and higher millimeter region continues to grow, the interest in the water surface and land clutter at terahertz and higher millimeter frequencies continues to increase. An empirical model of sea clutter reflectivity is described firstly, which is valid at near vertical incidence and has small average absolute deviation compared to other empirical models. Simulated results of 0.14 THz sea clutter at near vertical incidence with thismodel are shown. An indoor test-bed is constructed in order to measure 0.14 THz water surface clutter reflectivity and an experiment is carried out. Initial experimental results are presented and compared to the simulation results, which partially verifies that the empirical sea clutter model still works at 0.14 THz.展开更多
Understanding hydrogen diffusion in amorphous SiO2(a-SiO2),especially under strain,is of prominent importance for improving the reliability of semiconducting devices,such as metal-oxide-semiconductor field effect tran...Understanding hydrogen diffusion in amorphous SiO2(a-SiO2),especially under strain,is of prominent importance for improving the reliability of semiconducting devices,such as metal-oxide-semiconductor field effect transistors.In this work,the diffusion of hydrogen atom in a-SiO2 under strain is simulated by using molecular dynamics(MD)with the ReaxFF force field.A defect-free a-SiO2 atomic model,of which the local structure parameters accord well with the experimental results,is established.Strain is applied by using the uniaxial tensile method,and the values of maximum strain,ultimate strength,and Young's modulus of the a-SiO2 model under different tensile rates are calculated.The diffusion of hydrogen atom is simulated by MD with the ReaxFF,and its pathway is identified to be a series of hops among local energy minima.Moreover,the calculated diffusivity and activation energy show their dependence on strain.The diffusivity is substantially enhanced by the tensile strain at a low temperature(below 500 K),but reduced at a high temperature(above 500 K).The activation energy decreases as strain increases.Our research shows that the tensile strain can have an influence on hydrogen transportation in a-SiO2,which may be utilized to improve the reliability of semiconducting devices.展开更多
Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-p...Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in a-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen （H2） is present, the proton generation can be enhanced by cracking the He molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doubly- hydrogenated defects. In particular, a fully passivated E~ center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices.展开更多
Size and morphology are critical factors in determining the electrochemical performance of the supercapacitor materials,due to the manifestation of the nanosize effect.Herein,different nanostructures of the CrN materi...Size and morphology are critical factors in determining the electrochemical performance of the supercapacitor materials,due to the manifestation of the nanosize effect.Herein,different nanostructures of the CrN material are prepared by the combination of a thermal-nitridation process and a template technique.High-temperature nitridation could not only transform the hexagonal Cr_(2)O_(3)into cubic CrN,but also keep the template morphology barely unchanged.The obtained CrN nanostructures,including(i)hierarchical microspheres assembled by nanoparticles,(ii)microlayers,and(iii)nanoparticles,are studied for the electrochemical supercapacitor.The CrN microspheres show the best specific capacitance(213.2 F/g),cyclic stability(capacitance retention rate of 96%after 5000 cycles in 1-mol/L KOH solution),high energy density(28.9 Wh/kg),and power density(443.4 W/kg),comparing with the other two nanostructures.Based on the impedance spectroscopy and nitrogen adsorption analysis,it is revealed that the enhancement arised mainly from a high-conductance and specific surface area of CrN microspheres.This work presents a general strategy of fabricating controllable CrN nanostructures to achieve the enhanced supercapacitor performance.展开更多
It is well known that in the process of thermal oxidation of silicon,there are P_(b)-type defects at amorphous silicon dioxide/silicon(a-SiO_(2)/Si)interface due to strain.These defects have a very important impact on...It is well known that in the process of thermal oxidation of silicon,there are P_(b)-type defects at amorphous silicon dioxide/silicon(a-SiO_(2)/Si)interface due to strain.These defects have a very important impact on the performance and reliability of semiconductor devices.In the process of passivation,hydrogen is usually used to inactivate P_(b)-type defects by the reaction P_(b)+H_(2)→P_(b)H+H.At the same time,P_(b)H centers dissociate according to the chemical reaction P_(b)H→P_(b)+H.Therefore,it is of great significance to study the balance of the passivation and dissociation.In this work,the reaction mechanisms of passivation and dissociation of the P_(b)-type defects are investigated by first-principles calculations.The reaction rates of the passivation and dissociation are calculated by the climbing image-nudged elastic band(CI-NEB)method and harmonic transition state theory(HTST).By coupling the rate equations of the passivation and dissociation reactions,the equilibrium density ratio of the saturated interfacial dangling bonds and interfacial defects(P_(b),P_(b)0,and P_(b)1)at different temperatures is calculated.展开更多
The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects.The depassivation of these defects suggests that the deep levels associated with the defects are reactivated,aff...The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects.The depassivation of these defects suggests that the deep levels associated with the defects are reactivated,affecting the performance of devices.This work simulates the depassivation reactions between holes and passivated amorphous-SiO_(2)/Si interface defects(HP_(b)+h→P_(b)+H^(+)).The climbing image nudged elastic band method is used to calculate the reaction curves and the barriers.In addition,the atomic charges of the initial and final structures are analyzed by the Bader charge method.It is shown that more than one hole is trapped by the defects,which is implied by the reduction in the total number of valence electrons on the active atoms.The results indicate that the depassivation of the defects by the holes actually occurs in three steps.In the first step,a hole is captured by the passivated defect,resulting in the stretching of the Si-H bond.In the second step,the defect captures one more hole,which may contribute to the breaking of the Si-H bond.The H atom is released as a proton and the Si atom is three-coordinated and positively charged.In the third step,an electron is captured by the Si atom,and the Si atom becomes neutral.In this step,a Pb-type defect is reactivated.展开更多
The first-principles calculations based on density functional theory are performed to study F-,Cl-,and N-related defects of amorphous SiO_(2)(a-SiO_(2)) and their impacts on carrier trapping and proton release.The pos...The first-principles calculations based on density functional theory are performed to study F-,Cl-,and N-related defects of amorphous SiO_(2)(a-SiO_(2)) and their impacts on carrier trapping and proton release.The possible geometric configurations of the impurity-related defects,the formation energies,the hole or electron trapping of the neutral defects,and the mechanisms to suppress proton diffusion by doping N are investigated.It is demonstrated by the calculations that the impurity atoms can interact with the oxygen vacancies and result in impurity-related defects.The reactions can be utilized to saturate oxygen vacancies that will cause ionization damage to the semiconducting devices.Moreover,the calculated formation energy indicates that the F-or Cl-related oxygen vacancy defect is a deep hole trap,which can trap holes and prevent them from diffusing to the a-SiO_(2)/Si interface.However,three N-related defects,namely N(2)o-H,N(2)o=O,and N(3)o-Vo,tend to act as shallow hole traps to facilitate hole transportation during device operation.The N(2)o and N(3)o configurations can be negatively charged as deep electron traps during the oxide charge buildup after ionization radiation.In addition,the nudged elastic band(NEB) calculations show that four N-related defects,namely N(2)o,N(2)o-H,N(2)o=O,and N(3)o are capable of capturing protons and preventing them from diffusing to and de-passivating the interface.This research reveals the fundamental properties of the F-,Cl-,and N-related defects in amorphous silica and the details of the reactions of the carrier trapping and proton release.The findings help to understand the microscopic mechanisms that alleviate ionization damage of semiconducting devices by doping a-SiO_(2).展开更多
The Hugoniot equation-of-state(EOS)of porous iron with an average initial density of 6.904g/cm^(3) has been measured in the pressure range from 90 to 160GPa,and a good straight fitting D=2.997+1.603u has accordingly b...The Hugoniot equation-of-state(EOS)of porous iron with an average initial density of 6.904g/cm^(3) has been measured in the pressure range from 90 to 160GPa,and a good straight fitting D=2.997+1.603u has accordingly been obtained,where D is the shock wave velocity and u the particle velocity,both in units of km/s.Combining this with the Hugoniot EOS of non-porous iron,the Grüneisen EOS and the Rankine-Hugoniot energy conservation relation,and taking the possible solid-liquid transition correction,we have calculated the Grüneisen parameterγof iron and obtained the resultγ0ρ0=γρ=const,withγ0=1.945 andρ0=7.856g/cm^(3),ρbeing the density.展开更多
基金the Presidential Foundation of China Academy of Engineering Physics(Grant No.YZJJZQ2022016)the National Natural Science Foun-dation of China(Grant No.52207177).
文摘The spatial distributions of different kinds of ions are usually not completely the same in the process of extracting.In order to study the reason for the different characteristics of ion extraction, a simplified simulation model of Cu+ andCr+ ions extraction process was established by 2D3V (two-dimensional in space and three- dimensional in velocity space)particle-in-cell (PIC) method. The effects of different extraction voltages from 0 V to 500 V on the density distribution ofCu+ and Cr+ ions and the change of plasma emission surface were analyzed. On the basis of this model, the ion densitydistribution characteristics of Cu+ ions mixed with Li+, Mg+, K+, Fe+, Y+, Ag+, Xe+, Au+, and Pb+ ions respectivelyunder 200-V extraction voltage are further simulated, and it is revealed that the atomic mass of the ions is the key reason fordifferent ion density distributions when different kinds of ions are mixed and extracted, which provides support for furtherunderstanding of ion extraction characteristics.
基金Project supported by Presidential Foundation of CAEP (Grant No.YZJJZQ2022016)the National Natural Science Foundation of China (Grant No.52207177)。
文摘The characteristics of the extracted ion current have a significant impact on the design and testing of ion source performance.In this paper,a 2D in space and 3D in velocity space particle in cell(2D3V PIC)method is utilized to simulate plasma motion and ion extraction characteristics under various initial plasma velocity distributions and extraction voltages in a Cartesian coordinate system.The plasma density is of the order of 10^(15)m^(-3)-10^(16)m^(-3)and the extraction voltage is of the order of 100 V-1000 V.The study investigates the impact of various extraction voltages on the velocity and density distributions of electrons and positive ions,and analyzes the influence of different initial plasma velocity distributions on the extraction current.The simulation results reveal that the main reason for the variation of extraction current is the spacecharge force formed by the relative aggregation of positive and negative net charges.This lays the foundation for a deeper understanding of extraction beam characteristics.
基金the National Natural Science Foundation of China(Grant Nos.62004180 and 61805218)the Science Challenge Project,China(Grant No.TZ20160032-1)the National Key Research and Development Program of China(Grant Nos.2017YFB0403100 and 2017YFB0403103)。
文摘The effects of Ga N/In Ga N asymmetric lower waveguide(LWG)layers on photoelectrical properties of In Ga N multiple quantum well laser diodes(LDs)with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of In Ga N insertion layer(In Ga N-IL)between the Ga N lower waveguide layer and the quantum wells,which is achieved with the Crosslight Device Simulation Software(PIC3D,Crosslight Software Inc.).The optimal thickness and the indium content of the In Ga N-IL in lower waveguide layers are found to be 300 nm and 4%,respectively.The thickness of In Ga N-IL predominantly affects the output power and the optical field distribution in comparison with the indium content,and the highest output power is achieved to be 1.25 times that of the reference structure(symmetric Ga N waveguide),which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells.Furthermore,when the thickness and indium content of In Ga N-IL both reach a higher level,the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor(OCF)related to the concentrated optical field in the lower waveguide.
基金supported by National Key Basic Research Program of China (grant No.2015CB755406)
文摘An room temperature low noise anti-parallel Schottky diode based 630-720 GHz sub-harmonic mixer(SHM) is designed, built and measured. Intrinsic resonances in lowpass hammer-head filter have been adopted to prevent the LO and RF power leak from the IF channel, while greatly minimizing the transmission line size. The mixer consists of 15 um quartz terahertz circuit and 127 um Al2 O3 IF transformer circuit. An improved lumped element equivalent noise model of SBDs guarantees the accuracy of simulation. The measurement indicates that with local oscillating(LO)signal of 2-8 mW, the lowest double sideband(DSB) conversion loss is 8.2 dB at 645 GHz,and the best DSB noise temperature is 2800 K at 657 GHz. The 3 dB bandwidth of conversion loss is 75 GHz from 638 to 715 GHz. The work IF frequency band is above 20 GHz ranging from 1 to 20 GHz with-10 dB return loss.
文摘Parameters of hydrogen plasma in a miniature Penning discharge ion source, including the electron temperature and the electron density, were measured by using double probes. The results indicate that the electron density increases and the electron temperature decreases with the increase in gas pressure and the discharge current. The electron temperature is about 5 - 9 eV and the electron density is 6.0× 10^13 ～ 1.2 × 10^14 m^-3 while the discharge current is in a range of 50 - 120 μA.
基金supported by Coordination Foundation of Institute of Electronic Engineering,China Academy of Engineering Physics(No.WF2011013)
文摘In electrical devices poured by epoxy resin, there are a lot of interfaces between epoxy resin and other solid dielectrics, i.e. solid-solid interfaces. Experiments were carried out to study the flashover characteristics of two typical solid-solid interfaces （epoxy-ceramic and epoxy~ PMMA） under steep high-voltage impulse for different electrode systems （coaxial electrodes and finger electrodes） and different types of epoxy resin （neat epoxy resin, polyether modified epoxy resin and polyurethane modified epoxy resin）. Results showed that, the flashover of solid-solid interface is similar to the breakdown of solid dielectric, and there are unrecoverable carbonated tracks after flashover. Under the same distance of electrodes, the electric stress of coaxial electrodes is lower than that of finger electrodes; and after the flashover, there are more severe breakdown and larger enhanced surface conductivity at interface for coaxial electrodes, as compared with the case of finger electrode. The dielectric properties are also discussed.
文摘Vacuum arc ion sources are known for delivering high currents of ion beams in many technological applications. There is a great need in the present ion accelerator injection research for a titanium vacuum arc source to produce high-ionized plasma, in which its parameter is extremely important to match the extractors geometry and the extraction voltage. In this paper, the radial and angular distributions of the titanium cathodic vacuum arc plasma parameters are measured by a cylindrical Langmuir probe and analyzed by the Druyvesteyn method from the I-V curves. The electron density ne is about 10^（17）m^（-3） and the effective electron temperature Tefr is in the range of 6.12-11.11 eV in the free expansion cup before the ion extraction. The measured distribution of ne over the expansion cross-section is non-uniform and axially unsymmetrical with its form similar to the Gaussian distribution, and most of the plasma is concentrated into an area whose radius is smaller than 5 mm. Teff has a nearly uniform distribution over the expansion cross-section during the discharge. The results of the plasma parameters＇ non-uniformity encourage the researchers to make some optimization designs to improve the parameter distributions, and then to facilitate ion extraction.
基金National Key RD Program of China Grant(2018YFB1801504)the President Funding of China Academy of Engineering Physics with No.YZJJLX2018009.
文摘In terahertz communication,the direct frequency conversion structure in which orthogonal mixer is the main frequency conversion unit,makes engineers get into trouble of in-phase(I)branch and quadrature(Q)branch imbalance,carrier wave leakage,etc.These damages result in system performance tremendous degrades.We proposed a semiblind method to estimate the I/Q imbalance of THz orthogonal modulator,based on predefined preamble and pilot symbols for quadrature amplitude modulation(QAM).In this paper,a transmitter with Y band quadrature mixer and 20Gbps base-band signal has been tested.The bandwidth of the baseband signal was 7GHz,and the modulation type was 16QAM.By this method,7dB improvement of the system’s symbol Mean Square Error(MSE)has been got.That means the proposed method can be used to eliminate the I/Q imbalance effectively.
基金Project supported by the National Natural Science Foundation of China(Grant No.51807050)the National Basic Research Program of China(Grant No.2015CB251002)the Program for the Top Young and Middle-aged Innovative Talents of Higher Learning Institutions of Hebei,China(Grant No.BJ2017038)
文摘A semi-empirical equation of state model for aluminum in a warm dense matter regime is constructed. The equation of state, which is subdivided into a cold term, thermal contributions of ions and electrons, covers a broad range of phase diagram from solid state to plasma state. The cold term and thermal contribution of ions are from the Bushman–Lomonosov model, in which several undetermined parameters are fitted based on equation of state theories and specific experimental data. The Thomas–Fermi–Kirzhnits model is employed to estimate the thermal contribution of electrons. Some practical modifications are introduced to the Thomas–Fermi–Kirzhnits model to improve the prediction of the equation of state model. Theoretical calculation of thermodynamic parameters, including phase diagram, curves of isothermal compression at ambient temperature, melting, and Hugoniot, are analyzed and compared with relevant experimental data and other theoretical evaluations.
文摘An air-spark switch plasma was diagnosed by the Mach–Zehnder laser interferometer with ultra-high spatial and temporal resolution. The interferograms containing plasma phase shift information at different time were obtained. The phase shift distributions of the plasma were extracted by numerically processing the interferograms. The three-dimensional(3 D) electron density distributions of the air-spark switch plasma were then obtained. The working process of the air-spark switch was described by analyzing the temporal and spatial evolution of the plasma electron density.
基金supported by National Natural Science Foundation of China (No. 51807184)
文摘Gas spark gap is widely used in any pulsed power system as the key element which directly determines its repetitive performance and output characteristics. Among many factors of threeelectrode gas spark gap, background pressure is of much importance in determining the gap performance parameters such as the delay and jitter, and relevant studies have been rarely performed. A magneto-hydrodynamic model of the arc in gas spark gap is built and the effects of background pressure on the arc characteristics are discussed in this paper. It is demonstrated that a higher background pressure may result in radial compression of the arc column, a higher arc voltage, and a lower declination rate of arc resistance in the first quarter cycle. Relevant simulation data would be helpful for the optimization of the design of gas spark gap.
基金Supported by China Academy of Engineering Physics(Project 2014B05005)
文摘A series of solid-solid interfaces, consisting of ceramic-epoxy resin interface samples with a tip-plate electrode, were investigated by performing partial discharge tests and realtime electrical tree observations. A toughening agent was added to the epoxy resin at different ratios for comparison. The impact strength, differential scanning calorimetry （DSC） and dielectric properties of the cured compositions and ceramic were tested. The electric field strength at the tip was calculated based on Maxwell＇s theory. The test results show that the addition of a toughener can improve the impact strength of epoxy resin but it decreases the partial discharge inception voltage （PDIV） of the interface sample. At the same time, toughening leads to complex branches of the electrical tree. The simulation result suggests that this reduction of the PDIV cannot be explained by a change of permittivity due to the addition of a toughening agent. The microstructural change caused by toughening was considered to be the key factor for lower PDIV and complex electrical tree branches.
文摘As the development of radar systems developed for the terahertz and higher millimeter region continues to grow, the interest in the water surface and land clutter at terahertz and higher millimeter frequencies continues to increase. An empirical model of sea clutter reflectivity is described firstly, which is valid at near vertical incidence and has small average absolute deviation compared to other empirical models. Simulated results of 0.14 THz sea clutter at near vertical incidence with thismodel are shown. An indoor test-bed is constructed in order to measure 0.14 THz water surface clutter reflectivity and an experiment is carried out. Initial experimental results are presented and compared to the simulation results, which partially verifies that the empirical sea clutter model still works at 0.14 THz.
基金Project supported by the Science Challenge Project,China(Grant No.TZ2016003-1-105)the CAEP Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201501).
文摘Understanding hydrogen diffusion in amorphous SiO2(a-SiO2),especially under strain,is of prominent importance for improving the reliability of semiconducting devices,such as metal-oxide-semiconductor field effect transistors.In this work,the diffusion of hydrogen atom in a-SiO2 under strain is simulated by using molecular dynamics(MD)with the ReaxFF force field.A defect-free a-SiO2 atomic model,of which the local structure parameters accord well with the experimental results,is established.Strain is applied by using the uniaxial tensile method,and the values of maximum strain,ultimate strength,and Young's modulus of the a-SiO2 model under different tensile rates are calculated.The diffusion of hydrogen atom is simulated by MD with the ReaxFF,and its pathway is identified to be a series of hops among local energy minima.Moreover,the calculated diffusivity and activation energy show their dependence on strain.The diffusivity is substantially enhanced by the tensile strain at a low temperature(below 500 K),but reduced at a high temperature(above 500 K).The activation energy decreases as strain increases.Our research shows that the tensile strain can have an influence on hydrogen transportation in a-SiO2,which may be utilized to improve the reliability of semiconducting devices.
基金Project supported by the Science Challenge Project,China(Grant No.TZ2016003-1-105)CAEP Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201501)+1 种基金the National Natural Science Foundation China(Grant No.NSFC 11404300)the National Basic Research Program of China(Grant No.2011CB606405)
文摘Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in a-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen （H2） is present, the proton generation can be enhanced by cracking the He molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doubly- hydrogenated defects. In particular, a fully passivated E~ center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11904299,U1930124,and 11804312)China Academy of Engineering Physics(CAEP)Foundation(Grant No.2018AB02)。
文摘Size and morphology are critical factors in determining the electrochemical performance of the supercapacitor materials,due to the manifestation of the nanosize effect.Herein,different nanostructures of the CrN material are prepared by the combination of a thermal-nitridation process and a template technique.High-temperature nitridation could not only transform the hexagonal Cr_(2)O_(3)into cubic CrN,but also keep the template morphology barely unchanged.The obtained CrN nanostructures,including(i)hierarchical microspheres assembled by nanoparticles,(ii)microlayers,and(iii)nanoparticles,are studied for the electrochemical supercapacitor.The CrN microspheres show the best specific capacitance(213.2 F/g),cyclic stability(capacitance retention rate of 96%after 5000 cycles in 1-mol/L KOH solution),high energy density(28.9 Wh/kg),and power density(443.4 W/kg),comparing with the other two nanostructures.Based on the impedance spectroscopy and nitrogen adsorption analysis,it is revealed that the enhancement arised mainly from a high-conductance and specific surface area of CrN microspheres.This work presents a general strategy of fabricating controllable CrN nanostructures to achieve the enhanced supercapacitor performance.
基金Project supported by the Science Challenge Project,China(Grant No.TZ2016003-1-105)the Tianjin Natural Science Foundation,China(Grant No.20JCZDJC00750)the Fundamental Research Funds for the Central Universities,Nankai University(Grant Nos.63211107 and 63201182).
文摘It is well known that in the process of thermal oxidation of silicon,there are P_(b)-type defects at amorphous silicon dioxide/silicon(a-SiO_(2)/Si)interface due to strain.These defects have a very important impact on the performance and reliability of semiconductor devices.In the process of passivation,hydrogen is usually used to inactivate P_(b)-type defects by the reaction P_(b)+H_(2)→P_(b)H+H.At the same time,P_(b)H centers dissociate according to the chemical reaction P_(b)H→P_(b)+H.Therefore,it is of great significance to study the balance of the passivation and dissociation.In this work,the reaction mechanisms of passivation and dissociation of the P_(b)-type defects are investigated by first-principles calculations.The reaction rates of the passivation and dissociation are calculated by the climbing image-nudged elastic band(CI-NEB)method and harmonic transition state theory(HTST).By coupling the rate equations of the passivation and dissociation reactions,the equilibrium density ratio of the saturated interfacial dangling bonds and interfacial defects(P_(b),P_(b)0,and P_(b)1)at different temperatures is calculated.
基金Project supported by the Science Challenge Project(Grant No.TZ2016003-1-105)Tianjin Natural Science Foundation,China(Grant No.20JCZDJC00750)the Fundamental Research Funds for the Central Universities—Nankai University(Grant Nos.63211107 and 63201182)。
文摘The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects.The depassivation of these defects suggests that the deep levels associated with the defects are reactivated,affecting the performance of devices.This work simulates the depassivation reactions between holes and passivated amorphous-SiO_(2)/Si interface defects(HP_(b)+h→P_(b)+H^(+)).The climbing image nudged elastic band method is used to calculate the reaction curves and the barriers.In addition,the atomic charges of the initial and final structures are analyzed by the Bader charge method.It is shown that more than one hole is trapped by the defects,which is implied by the reduction in the total number of valence electrons on the active atoms.The results indicate that the depassivation of the defects by the holes actually occurs in three steps.In the first step,a hole is captured by the passivated defect,resulting in the stretching of the Si-H bond.In the second step,the defect captures one more hole,which may contribute to the breaking of the Si-H bond.The H atom is released as a proton and the Si atom is three-coordinated and positively charged.In the third step,an electron is captured by the Si atom,and the Si atom becomes neutral.In this step,a Pb-type defect is reactivated.
基金Project supported by the Science Challenge Project(Grant No.TZ2016003-1-105)CAEP Microsystem and THz Science and Technology Foundation(Grant No.CAEPMT201501)+1 种基金the National Basic Research Program of China(Grant No.2011CB606405)Tianjin Natural Science Foundation,China(Grant No.20JCZDJC00750)。
文摘The first-principles calculations based on density functional theory are performed to study F-,Cl-,and N-related defects of amorphous SiO_(2)(a-SiO_(2)) and their impacts on carrier trapping and proton release.The possible geometric configurations of the impurity-related defects,the formation energies,the hole or electron trapping of the neutral defects,and the mechanisms to suppress proton diffusion by doping N are investigated.It is demonstrated by the calculations that the impurity atoms can interact with the oxygen vacancies and result in impurity-related defects.The reactions can be utilized to saturate oxygen vacancies that will cause ionization damage to the semiconducting devices.Moreover,the calculated formation energy indicates that the F-or Cl-related oxygen vacancy defect is a deep hole trap,which can trap holes and prevent them from diffusing to the a-SiO_(2)/Si interface.However,three N-related defects,namely N(2)o-H,N(2)o=O,and N(3)o-Vo,tend to act as shallow hole traps to facilitate hole transportation during device operation.The N(2)o and N(3)o configurations can be negatively charged as deep electron traps during the oxide charge buildup after ionization radiation.In addition,the nudged elastic band(NEB) calculations show that four N-related defects,namely N(2)o,N(2)o-H,N(2)o=O,and N(3)o are capable of capturing protons and preventing them from diffusing to and de-passivating the interface.This research reveals the fundamental properties of the F-,Cl-,and N-related defects in amorphous silica and the details of the reactions of the carrier trapping and proton release.The findings help to understand the microscopic mechanisms that alleviate ionization damage of semiconducting devices by doping a-SiO_(2).
基金Supported by the Science and Technology Foundation of China Academy of Engineering Physics under contract No.990110.
文摘The Hugoniot equation-of-state(EOS)of porous iron with an average initial density of 6.904g/cm^(3) has been measured in the pressure range from 90 to 160GPa,and a good straight fitting D=2.997+1.603u has accordingly been obtained,where D is the shock wave velocity and u the particle velocity,both in units of km/s.Combining this with the Hugoniot EOS of non-porous iron,the Grüneisen EOS and the Rankine-Hugoniot energy conservation relation,and taking the possible solid-liquid transition correction,we have calculated the Grüneisen parameterγof iron and obtained the resultγ0ρ0=γρ=const,withγ0=1.945 andρ0=7.856g/cm^(3),ρbeing the density.
