期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Analysis and design of resistance-wire heater in MOCVD reactor 被引量:1
1
作者 曲毓萱 王斌 +5 位作者 胡仕刚 吴笑峰 李志明 唐志军 李劲 胡莹璐 《Journal of Central South University》 SCIE EI CAS 2014年第9期3518-3524,共7页
Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heati... Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position. 展开更多
关键词 metal organic chemical vapor deposition (MOCVD) reactor design thermal analysis filament heating
在线阅读 下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部