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Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger
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作者 WANG Hao LIU Xuechao +8 位作者 ZHENG Zhong PAN Xiuhong XU Jintao ZHU Xinfeng CHEN Kun DENG Weijie TANG Meibo GUO Hui GAO Pan 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2024年第9期1070-1076,共7页
Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe... Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect. 展开更多
关键词 silicon carbide photoconductive semiconductor switch on-state resistance failure analysis
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基于提前分配路径的低时延片上路由器结构 被引量:6
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作者 郑小富 顾华玺 +1 位作者 杨银堂 黄忠凡 《电子与信息学报》 EI CSCD 北大核心 2013年第2期341-348,共8页
该文针对片上网络提出一种基于提前分配路径的低时延片上路由器结构(PAPR)。新路由器采用提前路由计算和提前分配路径来缩短路由器流水线深度。提前路由计算为虚信道提前分配提供了可靠保障,即使在虚信道路径提前分配失败的情况下,也不... 该文针对片上网络提出一种基于提前分配路径的低时延片上路由器结构(PAPR)。新路由器采用提前路由计算和提前分配路径来缩短路由器流水线深度。提前路由计算为虚信道提前分配提供了可靠保障,即使在虚信道路径提前分配失败的情况下,也不影响分组在网络中的传输时延。该文提出基于缓存状态的仲裁算法BSTS(BufferStatus)综合考虑当前节点缓存信息和下游节点缓存信息,不但降低了分组等待时延,而且降低了缓存空闲的概率。仿真结果表明,新路由器能明显改善网络的时延和吞吐性能,相比采用滑动迭代轮询仲裁iSLIP(iterativeRound-Robin Matching with SLIP(Serial Line Interface Protocal))算法的经典虚信道路由器,网络平均端到端时延降低了24.5%,吞吐率提高了27.5%;与采用轮询迭代RRM(Round-Robin Matching)算法的经典虚信道路由器相比,平均端到端时延降低了39.2%,吞吐率提高了47.2%。路由器硬件开销和平均功耗分别增加仅为8.9%,5.9%。 展开更多
关键词 片上网络 虚信道路由器 仲裁算法
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