Electron trapping material CaS:Eu,Sm has been prepared by the technique of direct doping rare earth.It can convert infrared light (0.8～1.6μm) to visible light (～672nm) and its quantum efficiency is more than 76%.Hi...Electron trapping material CaS:Eu,Sm has been prepared by the technique of direct doping rare earth.It can convert infrared light (0.8～1.6μm) to visible light (～672nm) and its quantum efficiency is more than 76%.High efficiency and portable cards for infrared laser detection have been made of electron trapping material by using various expertiese and tested on many conditions,such as waterlogging at high and low temperature.According to the test,this kind of infrared detecting card can convert infrared light (0.8～1.6μm) to visible light at room temperature efficiently and can be used extensively for adjusting and detecting infrared laser emitted by YAG,GaAs,InGaAsP.展开更多
文摘Electron trapping material CaS:Eu,Sm has been prepared by the technique of direct doping rare earth.It can convert infrared light (0.8～1.6μm) to visible light (～672nm) and its quantum efficiency is more than 76%.High efficiency and portable cards for infrared laser detection have been made of electron trapping material by using various expertiese and tested on many conditions,such as waterlogging at high and low temperature.According to the test,this kind of infrared detecting card can convert infrared light (0.8～1.6μm) to visible light at room temperature efficiently and can be used extensively for adjusting and detecting infrared laser emitted by YAG,GaAs,InGaAsP.
